Current Applied Physics

Korean Physical Society (한국물리학회)
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Observation of saturation transfer characteristics in solution processed vertical organic field-effect transistors (VOFETs) with high leakage current

  • Sarjidan, M.A. Mohd (Low Dimensional Materials Research Centre, Department of Physics, University of Malaya) ;
  • Shuhaimi, Ahmad (Low Dimensional Materials Research Centre, Department of Physics, University of Malaya) ;
  • Majid, W.H. Abd. (Low Dimensional Materials Research Centre, Department of Physics, University of Malaya)
  • Received : 2018.04.11
  • Accepted : 2018.08.10
  • Published : 2018.11.30
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Abstract

Unlike ordinary organic field-effect transistors (OFETs), saturation current is hardly to be found in vertical OFETs (VOFETs). Moreover, the fabrication process of patterned sourced for VOFETs is quite complex. In this current work, a simple solution processed VOFET with directly deposited intermediate silver source electrode has been demonstrated. The VOFET exhibits a high leakage current that induces an inversion polarity of its transistor behavior. Interestingly, a well-defined saturation current was observed in the linear scale of transfer characteristic. The VOFET operated with high-current density > $280mA/cm^2$ at $V_d=5V$. Overview potential of the fabricated device in display application is also presented. This preliminary work does open-up a new direction in VOFET fabrication and their application.

Keywords

Acknowledgement

Supported by : University of Malaya

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