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http://dx.doi.org/10.17702/jai.2021.22.3.91

Improvement of Operating Stabilities in Organic Field-Effect Transistors by Surface Modification on Polymeric Parylene Dielectrics  

Seo, Jungyoon (Department of Materials Science and Chemical Engineering, Hanyang University)
Oh, Seungteak (Department of Materials Science and Chemical Engineering, Hanyang University)
Choi, Giheon (Department of Materials Science and Chemical Engineering, Hanyang University)
Lee, Hwasung (Department of Materials Science and Chemical Engineering, Hanyang University)
Publication Information
Journal of Adhesion and Interface / v.22, no.3, 2021 , pp. 91-97 More about this Journal
Abstract
By introducing an organic interlayer on the Parylene C dielectric surface, the electrical device performances and the operating stabilities of organic field-effect transistors (OFETs) were improved. To achieve this goal, hexamethyldisilazane (HMDS) and octadecyltrichlorosilane (ODTS), as the organic interlayer materials, were used to control the surface energy of the Parylene C dielectrics. For the bare case used with the pristine Parylene C dielectrics, the field-effect mobility (μFET) and threshold voltage (Vth) of dinaphtho[2,3-b:2',3'-f ]thieno[3,2-b]- thiophene (DNTT) FET devices were measured at 0.12 cm2V-1s-1 and - 5.23 V, respectively. On the other hand, the OFET devices with HMDS- and ODTS-modified cases showed the improved μFET values of 0.32 and 0.34 cm2V-1s-1, respectively. More important point is that the μFET and Vth of the DNTT FET device with the ODTS-modified Parylene C dielectric presented the smallest changes during a repeated measurement of 1000 times, implying that it has the most stable operating stability. The results could be meaned that the organic interlayer, especially ODTS, effectively covers the Parylene C dielectric surface with alkyl chains and reduces the charge trapping at the interface region between active layer and dielectric, thereby improving the electrical operating stability.
Keywords
Electrical stability; Polymeric gate dielectric; Parylene C; Self-assembled monolayer; Organic field-effect transistors;
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