• Title/Summary/Keyword: Optical characteristics

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Analysis of Positive Bias Temperature Instability Characteristic for Nano-scale NMOSFETs with La-incorporated High-k/metal Gate Stacks (La이 혼입된 고유전체/메탈 게이트가 적용된 나노 스케일 NMOSFET에서의 PBTI 신뢰성의 특성 분석)

  • Kwon, Hyuk-Min;Han, In-Shik;Park, Sang-Uk;Bok, Jung-Deuk;Jung, Yi-Jung;Kwak, Ho-Young;Kwon, Sung-Kyu;Jang, Jae-Hyung;Go, Sung-Yong;Lee, Weon-Mook;Lee, Hi-Deok
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.24 no.3
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    • pp.182-187
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    • 2011
  • In this paper, PBTI characteristics of NMOSFETs with La incorporated HfSiON and HfON are compared in detail. The charge trapping model shows that threshold voltage shift (${\Delta}V_{\mathrm{T}}$) of NMOSFETs with HfLaON is greater than that of HfLaSiON. PBTI lifetime of HfLaSiON is also greater than that of HfLaON by about 2~3 orders of magnitude. Therefore, high charge trapping rate of HfLaON can be explained by higher trap density than HfLaSiON. The different de-trapping behavior under recovery stress can be explained by the stable energy for U-trap model, which is related to trap energy level at zero electric field in high-k dielectric. The trap energy level of two devices at zero electric field, which is extracted using Frenkel-poole emission model, is 1,658 eV for HfLaSiON and 1,730 eV for HfLaON, respectively. Moreover, the optical phonon energy of HfLaON extracted from the thermally activated gate current is greater than that of HfLaSiON.

High rate deposition of poly-si thin films using new magnetron sputtering source

  • Boo, Jin-Hyo;Park, Heon-Kyu;Nam, Kyung-Hoon;Han, Jeon-Geon
    • Proceedings of the Korean Vacuum Society Conference
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    • 2000.02a
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    • pp.186-186
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    • 2000
  • After LeComber et al. reported the first amorphous hydrogenated silicon (a-Si: H) TFT, many laboratories started the development of an active matrix LCDs using a-Si:H TFTs formed on glass substrate. With increasing the display area and pixel density of TFT-LCD, however, high mobility TFTs are required for pixel driver of TF-LCD in order to shorten the charging time of the pixel electrodes. The most important of these drawbacks is a-Si's electron mobiliy, which is the speed at which electrons can move through each transistor. The problem of low carier mobility for the a-Si:H TFTs can be overcome by introducing polycrystalline silicon (poly-Si) thin film instead of a-Si:H as a semiconductor layer of TFTs. Therefore, poly-Si has gained increasing interest and has been investigated by many researchers. Recnetly, fabrication of such poly-Si TFT-LCD panels with VGA pixel size and monolithic drivers has been reported, . Especially, fabricating poly-Si TFTs at a temperature mach lower than the strain point of glass is needed in order to have high mobility TFTs on large-size glass substrate, and the monolithic drivers will reduce the cost of TFT-LCDs. The conventional methods to fabricate poly-Si films are low pressure chemical vapor deposition (LPCVD0 as well as solid phase crystallization (SPC), pulsed rapid thermal annealing(PRTA), and eximer laser annealing (ELA). However, these methods have some disadvantages such as high deposition temperature over $600^{\circ}C$, small grain size (<50nm), poor crystallinity, and high grain boundary states. Therefore the low temperature and large area processes using a cheap glass substrate are impossible because of high temperature process. In this study, therefore, we have deposited poly-Si thin films on si(100) and glass substrates at growth temperature of below 40$0^{\circ}C$ using newly developed high rate magnetron sputtering method. To improve the sputtering yield and the growth rate, a high power (10~30 W/cm2) sputtering source with unbalanced magnetron and Si ion extraction grid was designed and constructed based on the results of computer simulation. The maximum deposition rate could be reached to be 0.35$\mu$m/min due to a high ion bombardment. This is 5 times higher than that of conventional sputtering method, and the sputtering yield was also increased up to 80%. The best film was obtained on Si(100) using Si ion extraction grid under 9.0$\times$10-3Torr of working pressure and 11 W/cm2 of the target power density. The electron mobility of the poly-si film grown on Si(100) at 40$0^{\circ}C$ with ion extraction grid shows 96 cm2/V sec. During sputtering, moreover, the characteristics of si source were also analyzed with in situ Langmuir probe method and optical emission spectroscopy.

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Optical Characteristics of Multi-Stacked InAs/InAlGaAs Quantum Dots (다층 성장한 InAs/InAlGaAs 양자점의 광학적 특성)

  • Oh, Jae-Won;Kwon, Se-Ra;Ryu, Mee-Yi;Jo, Byoung-Gu;Kim, Jin-Soo
    • Journal of the Korean Vacuum Society
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    • v.20 no.6
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    • pp.442-448
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    • 2011
  • Self-assembled InAs/InAlGaAs quantum dots (QDs) grown on an InP (001) substrate have been investigated by using photoluminescence (PL) and time-resolved PL measurements. The single layer (QD1) and seven stacks (QD2) of InAs/InAlGaAs QDs grown by the conventional S-K growth mode were used. The PL peak at 10 K was 1,320 nm for both QD1 and QD2. As the temperature increases from 10 to 300 K, the PL peaks for QD1 and QD2 were red-shifted in the amount of 178 and 264 nm, respectively. For QD1, the PL decay increased with increasing emission wavelength from 1,216 to 1,320 nm, reaching a maximum decay time of 1.49 ns at 1,320 nm, and then decreased as the emission wavelength was increased further. However, the PL decay time for QD2 decreased continuously from 1.83 to 1.22 ns as the emission wavelength was increased from 1,130 to 1,600 nm, respectively. These PL and TRPL results for QD2 can be explained by the large variation in the QD size with stacking number caused by the phase separation of InAlGaAs.

Physical Properties Assessment of Soft Contact Lens with Halogen and Carboxylic Substituted Pyridine as Additive (할로겐과 카르복시산으로 치환된 피리딘 첨가제를 사용한 소프트 콘택트렌즈의 물성 평가)

  • Kim, Duck-Hyun;Sung, A-Young
    • Journal of Korean Ophthalmic Optics Society
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    • v.20 no.4
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    • pp.437-443
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    • 2015
  • Purpose: This study evaluated the optical and physical and characteristics of soft contact lens polymerized with addition of 3-chloropyridine-4-carboxylic acid and 3-fluoropyridine-4-carboxylic acid in the basic hydrogel contact lens material. In particular, the utility of 3-chloropyridine-4-carboxylic acid and 3-fluoropyridine- 4-carboxylic acid as a hydrogel contact lens material was investigated. Methods: In this study, 3-chloropyridine-4-carboxylic acid and 3-fluoropyridine-4-carboxylic acid were used as additives. Also, 2-hydroxyethyl methacrylate, acrylic acid, methyl methacrylate and a cross-linker EGDMA were co-polymerized in the presence of AIBN as an initiator. Results: The physical properties of the produced polymers were measured as followings. The water content of 34.54~37.15%, refractive index of 1.4320~1.4342, tensile strength of 0.2872~0.3608 kgf and contact angle of $57.82{\sim}79.57^{\circ}$, UV-B transmittance of 76.8~82.4% and UV-A transmittance of 84.6~86.6% were obtained respectively. Conclusions: Based on the results of this study, contact lens material containing 3-chloropyridine-4-carboxylic acid and 3-fluoropyridine-4-carboxylic acid is expected to be able to used as a material for high wettability and UV-block hydrogel contact lens.

Formation of Si Nanodot by Using SiNx Thin Films (SiNx 박막을 이용한 Si Nanodot의 형성)

  • Lee, Jang Woo;Park, Ik Hyun;Shin, Byul;Chung, Chee Won
    • Applied Chemistry for Engineering
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    • v.16 no.6
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    • pp.768-771
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    • 2005
  • The deposition of silicon nitride ($SiN_x$) thin films was carried out on $SiO_2/Si$ substrate at room temperature by reactive dc magnetron sputtering. The analysis of deposited $SiN_x$ films using x-ray photoelectron spectroscopy indicated that the composition of $SiN_x$ films was Si-rich. The deposited $SiN_x$ thin films were annealed by varying annealing temperature and time. X-ray diffraction (XRD) analysis was performed in order to examine the crystallization of Si in $SiN_x$ thin films. The optical and electrical properties of $SiN_x$ thin films were measured for the observation of Si nanodot. As a result, we observed the XRD peaks that might be the Si crystals. As the annealing time and annealing temperature increased, the photoluminescence intensity of $SiN_x$ films gradually increased. The capacitance-voltage characteristics of $SiN_x$ film measured before and after annealing indicated that the trap effect of electrons or holes occurred due to the existence Si nanodots in the $SiN_x$ thin films.

Dentin bond strength of bonding agents cured with Light Emitting Diode (LIGHT EMITTING DIODE로 광조사한 상아질 접착제의 상아질 전단접착강도와 중합률에 관한 연구)

  • Kim Sun-Young;Lee In-Bog;Cho Byeong-Hoon;Son Ho-Hyun;Kim Mi-Ja;Seok Chang-In;Um Chung-Moon
    • Restorative Dentistry and Endodontics
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    • v.29 no.6
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    • pp.504-514
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    • 2004
  • This study compared the dentin shear bond strengths of currently used dentin bonding agents that were irradiated with an LED (Elipar FreeLight, 3M-ESPE) and a halogen light (VIP, BISCO). The optical characteristics of two light curing units were evaluated. Extracted human third molars were prepared to expose the occlusal dentin and the bonding procedures were performed under the irradiation with each light curing unit. The dentin bonding agents used in this study were Scotchbond Multipurpose (3M ESPE), Single Bond (3M ESPE), One-Step (Bisco), Clearfil SE bond (Kuraray), and Adper Prompt (3M ESPE), The shear test was performed by employing the design of a chisel-on-iris supported with a Teflon wall. The fractured dentin surface was observed with SEM to determine the failure mode. The spectral appearance of the LED light curing unit was different from that of the halogen light curing unit in terms of maximum peak and distribution. The LED LCU (maximum peak in 465 nm) shows a narrower spectral distribution than the halogen LCU (maximum peak in 487 nm). With the exception of the Clearfil SE bond (P < 0.05), each 4 dentin bonding agents showed no significant difference between the halogen light-cured group and the LED light-cured group in the mean shear bond strength (P > 0.05). The results can be explained by the strong correlation between the absorption spectrum of camphoroquinone and the narrow emission spectrum of LED.

Accuracy Improvement of Laser Navigation System using FIS and Reliability (FIS와 신뢰도를 이용한 레이저 내비게이션의 정밀도 향상)

  • Jung, Eun-Kook;Kim, Jung-Min;Jung, Kyung-Hoon;Kim, Sung-Shin
    • Journal of the Korean Institute of Intelligent Systems
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    • v.21 no.3
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    • pp.383-388
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    • 2011
  • This paper presents to study the accuracy improvement of the laser navigation using FIS(fuzzy inference system) and the reliability. As wireless guidance system, the top-mounted laser with the laser navigation can rotate $360^{\circ}$ with phototransistor or other optical sensors that read the return signal from reflectors mounted at the perimeter of the workspace. The type of major existing guidance systems is a wire guidance system. Because they have high accuracy and fast response time, they are used to most industries. However, their installation cost is very expensive and maintenance is very difficult because their sensors are placed approximately 1 inch below the ground or embedded in the floor. To solve those problems, the laser navigation was developed as a wire guidance system. It does not need to reconstruct a floor or ground. And it can reduce costs of installation and maintenance because changing the layout is easy. However, it is difficult to apply to an industrial field because it is easily affected by disturbances which cause loss and damage of data, and has slow respond time. Therefore, we study the accuracy improvement of the laser navigation. The proposed method is a correction method using reliability of the laser navigation. here, reliability is calculated by FIS which is designed with the analyzed characteristics of the laser navigation. For performance comparison, we use original position data form the laser navigation and position data corrected by original reliability from the laser navigation. In experimental result, we verified that the performance of the proposed method compared the others is improved by about 50% or more.

Characteristics of the SAR Images and Interferometric Phase over Oyster Sea Farming Site (굴 양식장에서의 SAR 영상 및 간섭위상 특성)

  • 김상완;이창욱;원중선
    • Korean Journal of Remote Sensing
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    • v.18 no.4
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    • pp.209-220
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    • 2002
  • We carried out studies on SAR image intensity and interferometric phase over oyster sea farms. Strong backscattering was observed in amplitude images, and that was considered as a radar signal double bouncing from horizontal bars. These sea farming structures are not visible in satellite optical images except IKONOS image, so that it demonstrates the value of radar remote sensing as an effective tool in support of sea farm detection. The intensity of the image is sensitive to system parameters including wavelength, polarization, and look direction, but does not correlate to tide height. We found that the strongest backscattering can be obtained by L-band HH-polarization with a look direction perpendicular to the horizontal bar. We also succeeded in generating 21 coherent JERS-1 SAR interferometric pairs over the oyster farms. The general trend of the fringe rate of the interferometric phases appeared to be governed by altitude of ambiguity. The general trend was modeled by an inverse function and removed to have a residual phase. The residual phase showed a linear relation with the tide height. The results demonstrate for the first time that SAR can possibly be used to estimate sea level. However, the r.m.s. error of a regression line is 11.7 cm, and that is so far too large to make reliable assessments of sea level in practical applications. Further studies is required to improve the accuracy specifically using multi-polarization SAR data.

Modified Thermal-divergence Model for a High-power Laser Diode (고출력 레이저 다이오드 광원의 열저항 개선을 위한 하부층 두께 의존성 수정 모델)

  • Yong, Hyeon Joong;Baek, Young Jae;Yu, Dong Il;O, Beom Hoan
    • Korean Journal of Optics and Photonics
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    • v.30 no.5
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    • pp.193-196
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    • 2019
  • The design and control of thermal flow is important for the operation of high-power laser diodes (LDs). It is necessary to analyze and improve the thermal bottleneck near the active layer of an LD. As the error in prediction of the thermal resistance of an LD is large, typically due to the hyperbolic increase and saturation to linear increase of the thermal resistance as a function of thickness, it is helpful to use a simple, modified divergence model for the improvement and optimization of thermal resistance. The characteristics of LDs are described quite well, in that the values for simulated thermal resistance curves and the thermal cross section followed are almost the same as the values from the model function. Also, the thermal-cross-section curve obtained by differentiating the thermal resistance is good for identifying thermal bottlenecks intuitively, and is also fitted quite well by the model proposed for both a typical LD structure and an improved LD with thin capping and high thermal conductivity.

Estimation of Typhoon Center Using Satellite SAR Imagery (인공위성 SAR 영상 기반 태풍 중심 산정)

  • Jung, Jun-Beom;Park, Kyung-Ae;Byun, Do-Seong;Jeong, Kwang-Yeong;Lee, Eunil
    • Journal of the Korean earth science society
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    • v.40 no.5
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    • pp.502-517
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    • 2019
  • Global warming and rapid climate change have long affected the characteristics of typhoons in the Northwest Pacific, which has induced increasing devastating disasters along the coastal regions of the Korean peninsula. Synthetic Aperature Radar (SAR), as one of the microwave sensors, makes it possible to produce high-resolution sea surface wind field around the typhoon under cloudy atmospheric conditions, which has been impossible to obtain the winds from satellite optical and infrared sensors. The Geophysical Model Functions (GMFs) for sea surface wind retrieval from SAR data requires the input of wind direction, which should be based on the accurate estimation of the center of the typhoon. This study estimated the typhoon centers using Sentinel-1A images to improve the problem of typhoon center detection method and to reflect it in retrieving the sea surface wind. The results were validated by comparing with the typhoon best track data provided by the Korea Meteorological Administration (KMA) and Japan Meteorological Agency (JMA), and also by using infrared images of Himawari-8 satellite. The initial center position of the typhoon was determined by using VH polarization, thereby reducing the possibility of error. The detected center showed a difference of 23.76 km on average with the best track data of the four typhoons provided by the KMA and JMA. Compared to the typhoon center estimated by Himawari-8 satellite, the results showed an average spatial variation of 11.80 km except one typhoon located near land with a large difference of 58.73 km. This result suggests that high-resolution SAR images can be used to estimate the center and retrieve sea surface wind around typhoons.