Proceedings of the Korean Vacuum Society Conference (한국진공학회:학술대회논문집)
- 2000.02a
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- Pages.186-186
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- 2000
High rate deposition of poly-si thin films using new magnetron sputtering source
- Boo, Jin-Hyo (Department of Chemistry, Sungkyunkwan University) ;
- Park, Heon-Kyu (Department of Metallurgical Engineering, sungkyunkwan University) ;
- Nam, Kyung-Hoon (Department of Metallurgical Engineering, sungkyunkwan University) ;
- Han, Jeon-Geon (Department of Metallurgical Engineering, sungkyunkwan University)
- Published : 2000.02.01
Abstract
After LeComber et al. reported the first amorphous hydrogenated silicon (a-Si: H) TFT, many laboratories started the development of an active matrix LCDs using a-Si:H TFTs formed on glass substrate. With increasing the display area and pixel density of TFT-LCD, however, high mobility TFTs are required for pixel driver of TF-LCD in order to shorten the charging time of the pixel electrodes. The most important of these drawbacks is a-Si's electron mobiliy, which is the speed at which electrons can move through each transistor. The problem of low carier mobility for the a-Si:H TFTs can be overcome by introducing polycrystalline silicon (poly-Si) thin film instead of a-Si:H as a semiconductor layer of TFTs. Therefore, poly-Si has gained increasing interest and has been investigated by many researchers. Recnetly, fabrication of such poly-Si TFT-LCD panels with VGA pixel size and monolithic drivers has been reported, . Especially, fabricating poly-Si TFTs at a temperature mach lower than the strain point of glass is needed in order to have high mobility TFTs on large-size glass substrate, and the monolithic drivers will reduce the cost of TFT-LCDs. The conventional methods to fabricate poly-Si films are low pressure chemical vapor deposition (LPCVD0 as well as solid phase crystallization (SPC), pulsed rapid thermal annealing(PRTA), and eximer laser annealing (ELA). However, these methods have some disadvantages such as high deposition temperature over
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