• The Transactions of the Korean Institute of Power Electronics
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• v.24 no.5
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• pp.372-378
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• 2019

This study proposes a new zero-current-zero-voltage-transition (ZCZVT) boost-flyback converter using a soft switching auxiliary circuit. The proposed converter integrates the boost and flyback converters to increase the voltage with a low duty ratio. The main and auxiliary switches turn the ZCZVT conditions on and off. Thus, the proposed converter has high efficiency. The voltage gain at the steady state is derived, and the inductor volt-second balance and the design guidelines are presented. Finally, the performance of the proposed converter is validated by experimental results from a 200 W, 30 V DC input, 400 V DC output, and 200 kHz boost-flyback converter prototype.

• Journal of Fisheries and Marine Sciences Education
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• v.12 no.2
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• pp.142-151
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• 2000

The studies on the electronic control fuel injection system for a DI diesel engine have done for reducing the exhaust emission and improving fuel consumption. The electronic control fuel injection system is classified into a common rail system, a unit injector system and a high pressure injection system. The characteristics of these systems are largely depends on the operating characteristics of its solenoid that have high speed on-off operation. In order to improve these characteristics of fuel injection system, it is necessary to design the optimal shape of solenoid and select the input method of its power source. It was proposed HELENOID, COLENOID, DISOLE, and Multipole Solenoid in the studies of design for the optimal shape of solenoid. The studies on the energizing method, input method for power of solenoid were dealt with the conventional energizing method, the chopping method and the pre-energizing method. In order to find out the high response characteristics of solenoid, it is necessary to test the performance of optimally designed solenoid with a new energizing method. In this paper, the solenoid of multi-pole type with plat armature and its power control unit to control input current by the chopping method designed, and its response tests were performed according to its energizing conditions. As a result, the maximum input current for solenoid was controlled by the period of first stage exciting current and chopping duty ratio of control stage exciting current, and the fastest "on" time was able to get 0.46ms. The conditions of fastest "on" time was 0.3ms for first stage exciting current, 0.16ms for control exciting current and 75% for chopping duty ratio.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.39 no.12
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• pp.1001-1007
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• 2002

In this paper we analyzed the effects of pentacene thickness and the location of source/drain contacts on the performance of pentacene TFT Above a certain thickness of pentacene thin film the pentacene grain was turned from the thin film phase into the bulk phase, resulting in degrading the crystallinity and then performance as well. For the top contact structure in which source/drain contacts are located above pentacene film, the contact resistance decreased comparing with the bottom contact structure. However, the leakage current in the off-state became large and then the related parameters such as on/off current ratio were deteriorated. We found that the thickness of around 300$\AA$-700$\AA$ was suitable, and that the bottom contact was more feasible for hig Performance pentacene OTFT.

• Transactions on Electrical and Electronic Materials
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• v.17 no.6
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• pp.329-334
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• 2016

In this work, the temperature dependence of electrical parameters of nanoscale SOI (silicon-on-insulator) TG (triple gate) n-FinFET (n-channel Fin field effect transistor) was investigated. Numerical device simulator $ATLAS^{TM}$ was used to construct, examine, and simulate the structure in three dimensions with different models. The drain current, transconductance, threshold voltage, subthreshold swing, leakage current, drain induced barrier lowering, and on/off current ratio were studied in various biasing configurations. The temperature dependence of the main electrical parameters of a SOI TG n-FinFET was analyzed and discussed. Increased temperature led to degraded performance of some basic parameters such as subthreshold swing, transconductance, on-current, and leakage current. These results might be useful for further development of devises to strongly down-scale the manufacturing process.

• Journal of Power Electronics
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• v.12 no.5
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• pp.708-714
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• 2012

This paper presents a new interleaved pulse-width modulation (PWM) boost-flyback converter to achieve power factor correction (PFC) and regulate DC bus voltage. The adopted boost-flyback converter has a high voltage conversion ratio to overcome the limit of conventional boost or buck-boost converter with narrow turn-off period. The proposed converter has wide turn-off period compared with a conventional boost converter. Thus, the higher output voltage can be achieved in the proposed converter. The interleaved PWM can further reduce the input and output ripple currents such that the sizes of inductor and capacitor are reduced. Since boundary conduction mode (BCM) is adopted to achieve power factor correction, power switches are turned on at zero current switching (ZCS) and switching losses are reduced. The circuit configuration, principle operation, system analysis, and design consideration of the proposed converter are presented in detail. Finally, experiments conducted on a laboratory prototype rated at 500W were presented to verify the effectiveness of the converter.

• Current Optics and Photonics
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• v.8 no.3
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• pp.239-245
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• 2024

This paper proposes single logarithmic amplification (single-LA) and deep learning (DL)-based fixed-threshold on-off keying (OOK) detection for free-space optical (FSO) communication. Multilevel LAs (MLAs) can be used to mitigate intensity fluctuations in the received OOK signal by their nonlinear gain characteristics; however, it is ineffective in the case of high scintillation, owing to degradation of the OOK signal's extinction ratio. Therefore, a DL technique is applied to realize effective scintillation compensation in single-LA applications. Fully connected (FC) networks and fully connected neural networks (FCNN), which have nonlinear modeling characteristics, are deployed in this work. The performance of the proposed method is evaluated through simulations under various scintillation effects. Simulation results show that the proposed method outperforms the conventional adaptive-threshold-decision, single-LA-based, MLA-based, FC-based, and FCNN-based OOK detection techniques.

• Progress in Superconductivity and Cryogenics
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• v.15 no.4
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• pp.30-33
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• 2013

The studies of superconducting fault current limiter (SFCL) for reduction of the fault current are actively underway in the worldwide. In this paper, we analyzed the characteristics of a new type SFCL using the conventional transformer and superconducting elements combined mutually. The secondary and third windings of this SFCL were connected the load and the superconducting element, respectively. The electric power was provided to load connected to secondary windings of the transformer in normal state of power system. On the other hand, when the fault occurred in power system, the fault current was limited by closing the line of third winding of the transformer. At this time, the ripple phenomenon of the fault was minimized by opening the fault line in secondary winding of a transformer in power system. The sensing of the fault state was performed by the CT(current transformer) and then turn-on and turn-off switching behavior of the SFCL was performed by the SCR(silicon-controlled rectifier). As a result, the proposed SFCL limited the fault current within a half-cycle efficiently. We confirmed that the fault current limitation rate was changed according to the winding ratio of a transformer.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.543-545
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• 2009

With injection-type source delivery system of atomic layer deposition (ALD), bottom-contact and bottom-gate thin-film transistors (TFTs) were fabricated with a poly-4-vinyphenol polymeric dielectric for the first time. The properties of the ZnO TFT were greatly influenced by the device structure and the process conditions. The zinc oxide TFTs exhibited a channel mobility of 0.43 $cm^2$/Vs, a threshold voltage of 0.85 V, a subthreshold slope of 3.30 V/dec, and an on-to-off current ratio of above $10^6$ with solid saturation.

• Proceedings of the KSR Conference
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• 1998.11a
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• pp.262-269
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• 1998

In case the fault occurs in AC power supply network, protective relaying system must selectively detect line-to-line/ground fault and immediately cut off the power flow into the fault location for guaranteeing the safety of people, electric vehicle and ground installation etc. It is the most important point in power system operation to minimize the fault duration by rapid trip scheme and accurate estimation of the fault location. In this paper, we analyze the load characteristics of each vehicle, perform the fault analysis of AC power supply network using AT current-ratio method. The result shows its usefulness.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.9
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• pp.728-731
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• 2009

We report numerical simulations to investigate of the dependendce of the on/off current ratio and channel charge distributions in silicon nanowire (SiNW) field-effect transistors (FETs) on the channel width and thicknesses. In order to investigate the transport behavior in devices with different channel geometries, we have performed detailed two-dimensional simulations of SiNWFETs and control FETs with a fixed channel length L of $10\;{\mu}m$, but varying the channel width W from 5 nm to $5\;{\mu}m$, and thickness t from 10 nm to 30 nm. We have show that $Q_{ON}/Q_{OFF}$ drastically decreases (from $^{\sim}2.9{\times}10^4$ to $^{\sim}9.8{\times}10^3$) as the channel thickness increases (from 10 nm to 30 nm). As a result of the simulation using a quantum model, even higher charge density in the bottom of SiNW channel was observed then in the bottom of control channel.