• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.15 no.7
• /
• pp.570-575
• /
• 2002

$SrBi_2Ta_2O_9$ thin films were etched in $Cl_2/CF_4/Ar$ inductively coupled plasma (ICP). The maximum etch rate was 1300 ${\AA}/min$ at 900 W ICP power in Cl$_2$(20%)/$CF_4$(20%)/Ar(60%). As RF source power increased, radicals (F, Cl) and ion ($Ar^+$) increased. The influence of plasma induced damage during etching process was investigated in terms of P-E hysteresis loops, chemical states on the surface, surface morphology and phase of X-ray diffraction. The chemical states on the etched surface were investigated with X-ray spectroscopy and secondary ion mass spectrometry. After annealing $700^{\circ}C$ for 1 h in $O_2$ atmosphere, the decreased P-E hysteresises of the etched SBT thin films in Ar and $Cl_2/CF_4/Ar$ plasma were recovered.

• The Sea:JOURNAL OF THE KOREAN SOCIETY OF OCEANOGRAPHY
• /
• v.23 no.1
• /
• pp.49-62
• /
• 2018

Net community production (NCP), defined as the difference between net primary production and respiration of heterotrophs, has been used as a measure of oceanic biological carbon pump. This paper summarizes the theoretical background and experimental methods for the estimation of NCP based on $O_2/Ar$ measurements ($O_2/Ar-NCP$). The high frequency measurements of $O_2/Ar-NCP$ (<1 min) is a significant enhancement over the conventional measures of biological pump, such as new production and export production. This paper also introduces some of important works as to the comparison between $O_2/Ar-NCP$ and other measures of biological pump, the distributions of $O_2/Ar-NCP$ in the oceans, and the correlation of $O_2/Ar-NCP$ with various oceanic parameters, including community structures.

• Journal of Nuclear Fuel Cycle and Waste Technology(JNFCWT)
• /
• v.18 no.3
• /
• pp.355-362
• /
• 2020

The corrosion behavior of the Inconel X-750 alloy was investigated for its potential application under a Cl₂-O₂ mixed gas flow in an Ar atmosphere. The corrosion rate was found to be negligible at temperatures up to 400℃ under a flow rate of 30 mL·min^-1 Cl₂ + 170 mL·min^-1 Ar, whereas an exponential increase was observed in the corrosion rate at temperatures greater than 500℃. The suppression of the corrosion reaction due to the presence of O₂ was verified experimentally at flow rates of 30 mL·min^-1 Cl₂ (4.96 g·m^-2·h^-1), 20 mL·min^-1 Cl₂ + 10 mL·min^-1 O₂ (2.02 g·m^-2 ·h^-1), and 10 mL·min^-1 Cl₂ + 20 mL·min^-1 O₂ (1.34 g·m^-2·h^-1) under a constant Ar flow rate of 170 mL·min^-1 at 600℃ for 8 h. The surface morphology analysis results revealed that porous surfaces with tunnel-type holes were produced under the Cl₂-O₂ mixed-gas condition. Furthermore, the effects of the Cl₂ flow rate on the corrosion rate were investigated, indicating that its impact was negligible within the range of 5-30 mL·min^-1 Cl₂ at 600℃.

• Journal of the Korean institute of surface engineering
• /
• v.41 no.6
• /
• pp.269-273
• /
• 2008

The etch of $(Na_{0.5}K_{0.5})NbO_3$ (NKN) thin film was performed in $BCl_3/Cl_2/Ar$ inductively coupled plasma. It was found that the 1sccm addition $BCl_3$ (5%) into $Cl_2/Ar$ plasma caused a non-monotonic behavior of the NKN etch rate. The maximum etch rate of NKN was 95.3 nm/min at $BCl_3$ (1 sccm)/$Cl_2$ (16 sccm)/Ar (4 sccm), 800 W ICP power, 1 Pa pressure and 400 W bias power. The NKN etch rate shows a monotonic behavior a s the bias power increases. The analysis of the narrow scan spectra of XPS for both a s-deposited and etched NKN films allowed one to assume ion assisted etch mechanism. The most probable reason for the maximum etch rate can be defined as a concurrence of chemical and physical etch pathways.

• Journal of the Korean Ceramic Society
• /
• v.40 no.7
• /
• pp.652-656
• /
• 2003

The green emitting phosphor, BnGa$_2$O$_4$:Mn thin films with spinel structure were deposited by rf magnetron sputtering at various Ar/O$_2$ ratios. Thin film phosphors were heat-treated in air and $N_2$+vacuum atmosphere, respectively. Effects of Ar/O$_2$ ratios and annealing conditions on the structural and photoluminescence (PL) and cathodeluminescence (CL) properties were investigated. Luminous properties were more improved by inhibiting the films from contacting with oxygen during heat treatment.

• Korean Journal of Materials Research
• /
• v.12 no.9
• /
• pp.740-746
• /
• 2002

In this study, the polycarbonate surface was treated by $O_2$/ Ar gases plasma for the enhancement of adhesion with Cu electrode. From the point of view of hydrophilicity and the functionality, the micro-roughness, new functional groups and oxygen content of the polycarbonate surface were increased by the $O_2$/ Ar gases plasma treatment. The Cu films deposited on the as-received polycarbonate were easily detached while, after the$ O_2$/ Ar gases plasma treatment the adhesive Cu films on polycarbonate could be obtained. These results can be explained that the polycarbonate had a hydrophilic surface with uniform micro-roughness and new functional groups by $O_2$/ Ar gases plasma treatment. Therefore,$O_2$/ Ar gases plasma treatment is a promising method for improvement of adhesion between polycarbonate and Cu electrode.

• Transactions on Electrical and Electronic Materials
• /
• v.15 no.1
• /
• pp.32-36
• /
• 2014

In this study, the etching characteristics of titanium dioxide ($TiO_2$) thin films were investigated with the addition of $N_2$ to CF4/Ar plasma. The crystal structure of the $TiO_2$ was amorphous. A maximum etch rate of 111.7 nm/min and selectivity of 0.37 were obtained in an $N_2/CF_4/Ar$ (= 6:16:4 sccm) gas mixture. The RF power was maintained at 700 W, the DC-bias voltage was - 150 V, and the process pressure was 2 Pa. In addition, the etch rate was measured as functions of the etching parameters, such as the gas mixture, RF power, DC-bias voltage, and process pressure. We used X-ray photoelectron spectroscopy to investigate the chemical state on the surface of the etched $TiO_2$ thin films. To determine the re-deposition and reorganization of residues on the surface, atomic force microscopy was used to examine the surface morphology and roughness of $TiO_2$ thin films.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.15 no.4
• /
• pp.314-318
• /
• 2002

The etching behaviors of the ferroelectric $YMnO_3$ thin films were studied by an inductively coupled plasma (ICP). The maximum etch rate of $YMnO_3$ thin film is 300 ${\AA}/min$ at Ar/$Cl_2$of 2/8, RF power of 800W, dc bias voltage of 200V, chamber pressure of 15mTorr and substrate temperature of $30^{\circ}C$. Addition of $CF_4$ gas decrease the etch rate of $YMnO_3$ thin film. From the results of XPS analysis, nonvolatile $YF_x$ compounds were found on the surface of $YMnO_3$ thin film which is etched in Ar/$Cl_2$/CF$_4$plasma. The etch profile of YMnO$_3$film is improved by addition of $CF_4$ gas into the Ar/$Cl_2$ plasma. These results suggest that YF$_{x}$ compound acts as a sidewall passivants which reduce the sticking coefficient of chlorine on $YMnO_3$.

• Journal of Ceramic Processing Research
• /
• v.13 no.spc2
• /
• pp.407-410
• /
• 2012

The properties of Al-doped ZnO (AZO) films were investigated as a function of H2/(Ar + H2) gas ratio using an AZO (2 wt% Al2O3) ceramic target in a radio frequency (RF) magnetron sputtering system. The deposition process was done at 200 ℃ and in 2 × 10-2Torr working pressure and with various ratios of H2/(Ar + H2) gas. During the AZO film deposition process, partial H2 gas affected the AZO film characteristics. The electron resistivity (~ 9.21 × 10-4 Ωcm) was lowest and mobility (~17.8 ㎠/Vs) was highest in AZO films when the H2/(Ar + H2) gas ratio was 2.5%. When the H2/(Ar + H2) gas ratio was increased above 2.5%, the electron resistivity increased and mobility decreased with increasing H2/(Ar + H2) gas ratio in AZO films. The carrier concentration increased with increasing H2/(Ar + H2) gas ratio from 0% to 7.5%. This phenomenon was explained by reaction of hydrogen and oxygen and additional formation of oxygen vacancy. The average optical transmission in the visible light wavelength region over 90% and an orientation of the deposition was [002] orientation for AZO films grown with all H2/(Ar + H2) gas ratios.

• The Sea:JOURNAL OF THE KOREAN SOCIETY OF OCEANOGRAPHY
• /
• v.26 no.4
• /
• pp.327-342
• /
• 2021

The global coastal region is considered as a sink for atmospheric CO₂. Since most of the studies in the East Sea focused on the Ulleung Basin, the importance of coastal region for carbon cycle has been overlooked. In this study, we compared the biological pump and CO₂ absorption between the Ulleung Basin and coastal region by surface measurements of biological O₂ supersaturation (𝚫O₂/Ar) and partial pressure of CO₂ (fCO₂). Cold and less saline waters in the coastal regions were in contrast with a warm and saline water in the Ulleung Basin. The coastal waters near Samcheok and Pohang showed higher fluorescence, 𝚫O₂/Ar, and lower fCO₂ than those in the Ulleung Basin, indicating higher primary production and CO₂ absorption in the areas. The average net community production estimated by 𝚫O₂/Ar were 19 ± 6 and 60 ± 9 mmol O₂ m^-2d^-1 in the Samcheok and Pohang, respectively, 2-7 times higher than that of 8 ± 4 mmol O₂ m^-2d^-1 in the Ulleung Basin. Similarly, the average CO₂ flux between the seawater and atmosphere were -17.1 ± 8.9 and -25.8 ± 13.2 mmol C m^-2d^-1 in the Samcheok and Pohang, respectively, 4-5 times higher than that of -4.7 ± 2.5 mmol C m^-2d^-1 in the Ulleung Basin. In the Samcheok and Pohang, degrees of N₂ saturation were lower by 3% than that the ambient waters, suggesting the possibility of nitrogen fixation by primary producers.