• Journal of The Korean Society of Grassland and Forage Science
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• v.25 no.1
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• pp.1-6
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• 2005

With recent interest organic farming the use of legumes including vetch and clover to provide N to adjacent crops is increasing in Korea. In the present studies, we conducted a trial to investigate the effects of the application of N rate on nitrogen fixation and transfer from vetch to barley in mixed stands. The experiment was arranged in a randomized complete block design with three replications. Four different N rates(0, 75, 113 and 150/ha) was used and vetch+barley was broadcasted manually on 1.5 $\times$2 m plot in Oct. 2001. Half of urea and K$_{2}O, 200 Phosphate and 75 kg potash per ha were applied as basal dressing md half of N md 75 potash were used for topdressing to soil surface on MarctL 2002. The equivalent of 1kg ha$^{-1}$ at($^{15}$NH$_{4}$)$_{2}$SO$_{4}$ solution at 99.8 atom $\%$$^{15}$N excess was applied to the microplot in mid April. Forage was harvested from each plot at ground level and separated into barley and vetch. Total N content and It values of samples were determined using a continuous flow stable isotope ratio mass spectrometry(IsoPrime-EA. Micromass, UK.). The percentage of legume H fixed from atmospheric N2 were 95.0, 93.8, 94.4 and $84.8\%$ with increment of N levels. The percentage of N transfer from vetch to barley by N-difference method with increment of N fertilizer were from 58 to$49\%$ while 39 to $23\%$ in $^{15}$N-dilution method. The amount of transfer from vetch to barley were 87 to 68 kg/ ha with N level by N-difference moth여 and 58 to -56/ha with N application levels by $^{15}$N dilution method. The amount of nitrogen fixation per ha were from 150 kg / ha to 219 kg / ha by different method, but on the other side 49 to 105kg/ha by N$^{15}$-dilution.

• Journal of Information Display
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• v.6 no.2
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• pp.16-18
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• 2005

Hybrid insulator pentacene thin film transistors (TFTs) are fabricated with thermally grown oxide and cross-linked polyvinylalcohol (PVA) including surface treatment by dilute ploymethylmethacrylate (PMMA) layer on $n^+$ doped silicon wafer. Through the optimization of $SiO_2$ layer thickness in hybrid insulator structure, carrier mobility is increased to more than 35 times than that of the TFT which has only a gate insulator of $SiO_2$ at the same electric field. The carrier mobility of $1.80cm^2$/V-s, subthreshold swing of 1.81 V/decade, and $I_{on}/I_{off}$ current ratio> $1.10{\times}10^5$ are obtained less than -30 V bias condition. The result is one of the best reported performances of pentacene TFTs with hybrid insulator including cross-linked PVA layer as a gate insulator at relatively low voltage operation.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.307-307
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• 2012

In this study, we investigated that the resistance switching characteristics of Al-doped MgOx films with increasing Al doping concentration and increasing film thickness. The Al-doped MgOx based ReRAM devices with a TiN/Al-doped MgOx/Pt/Ti/SiO2 were fabricated on Si substrates. The 5 nm, 10 nm, and 15 nm thick Al-doped MgOx films were deposited by reactive dc magnetron co-sputtering at $300^{\circ}C$ and oxygen partial ratio of 60% (Ar: 16 sccm, O2: 24 sccm). Micro-structure of Al-doped MgOx films and atomic concentration were investigated by XRD and XPS, respectively. The Al-doped MgOx films showed set/reset resistance switching behavior at various Al doping concentrations. The process voltage of forming/set is decreased and whereas the initial current level is increased with decreasing thickness of Al-doped MgOx films. Besides, the initial current of Al-doped MgOx films is increased with increasing Al doping concentration in MgOx films. The change of resistance switching behavior depending on doping concentration was discussed in terms of concentration of non-lattice oxygen of Al-doped MgOx.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.31 no.3
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• pp.135-140
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• 2018

Atomically thin $MoS_2$ single crystals have a two-dimensional structure and exhibit semiconductor properties, and have therefore recently been utilized in electronic devices and circuits. In this study, we have fabricated a field effect transistor (FET), using a CVD-grown, 3 nm-thin, $MoS_2$ single-crystal as a transistor channel after transfer onto a $SiO_2/Si$ substrate. The $MoS_2$ FETs displayed n-channel characteristics with an electron mobility of $0.05cm^2/V-sec$, and a current on/off ratio of $I_{ON}/I_{OFF}{\simeq}5{\times}10^4$. Application of bottom-gate voltage stresses, however, increased the interface charges on $MoS_2/SiO_2$, incurred the threshold voltage change, and degraded the device performance in further measurements. Exposure of the channel to UV radiation further degraded the device properties.

• Current Research on Agriculture and Life Sciences
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• v.31 no.2
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• pp.88-93
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• 2013

The cultivation methods of Acanthopanax in Korea need to be optimized. Hence, this study investigated the effect of different fertilizer ratios and planting dates on the growth and acanthoside D content of two (2) Acanthopanax species. The current recommended fertilizer rate of 10.5-8.5-8.5 $kg/ha^-$ ($N-P_2O_5-K_2O$, respectively) produced the best plant growth of Acanthopanax. For the first year, the acanthoside D content resulting from the 2P (2x phosphate) rate was higher than that from the other fertilizer ratios, yet there were no significant differences resulting from the various treatments for either Acanthopanax divaricatus or Acanthopanax koreanum. Similarly, for the second year, there were no significant differences in the acanthoside D content resulting from the various fertilizer ratios, although for both species the acanthoside D content resulting from the 2P rate was slightly higher than that from the other treatments. Therefore, the results indicated that doubling the amount of phosphate increased the acanthoside D content. Plus, the optimum planting date with respect to growth and productivity for Acanthopanax divaricatus was identified as April 15.

• Membrane Journal
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• v.1 no.1
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• pp.100-100
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• 1991

A novel system to thicken the concentrated colloidal solution from membrane water treat-ment processes was developed. A hollow-fiber microfilter(hydrophilic polyethylene nominal pore size 0.1 μm total surface area 0.42 m2) was installed in an acrylic housing that has an aeration port 5 cm below the membrane and a clarifier in the bottom. The concentrate was uniformly supplied from the top of the housing. Bacuum filtration caused downward flow of concentrate and as a result thickening interface. The addition of poly-aluminum chloride (PAC) resulted in rapid increase of trans-membrane pressure (TMP) and in no improvement of the filtered water turbidity and thickening process. Two types of con-centrate and concentrate turbidity had little effect on the increase of TMP and concentrate thickening. It was observed that for the same height of membrane housing membrane surface area to housing volume (A/V) ratio had significant effect on the increase of TMP. When the housing volume was increased ten times the increasing rate of TMP was three times faster as compared to the original housing. A hydraulic model successfully simulated the formation and sedimentation of thickening interface.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.1291-1293
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• 2005

Hybrid insulator pentacene thin film transistors (TFTs) were fabricated with thermally grown oxide and cross-linked polyvinylalcohol (PVA) including surface treatment by dilute ploymethylmethacrylate (PMMA) layers on $n^+$ doped silicon wafer. Through the optimization of $SiO_2$ layer thickness in hybrid insulator structure, carrier mobility was increased to above 35 times than that of the TFT only with the gate insulator of $SiO_2$ at the same transverse electric field. The carrier mobility of 1.80 $cm^2$/V-s, subthreshold swing of 1.81 V/decade, and $I_{on}$/ $I_{off}$ current ratio > 1.10 × $10^5$ were obtained at low bias (less than -30 V) condition. The result is one of the best reported performances of pentacne TFTs with hybrid insulator including cross-linked PVA material at low voltage operation.

• 한국초전도학회:학술대회논문집
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• v.10
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• pp.45-50
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• 2000

We have investigated the influence of columnar defects (CD) on the vortex dynamics in pristine and iodine-intercalated Bi$_2$Sr$_2$CaCu$_2$O$_{8+{\delta}} single crystals from do SQUID magnetization measurements. Especially, the temperature dependence of the irreversibility fields, H$_{irr}$(T), were studied. Anisotropy ratio ${\gamma}$, estimated from the fitting to the 2-dimensional melting model (A. Schilling et al., Phys. Rev. Lett. 71 1899 (1993)) in higher fields than the matching field B$_{\phi}$ at low temperature region, turns out to be decreased by the iodine-intercalation and additionally by the heavy-ion irradiation.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.19 no.5
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• pp.215-222
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• 2009

Many concepts of external magnetic field applications in crystal growth processes have been developed to control melt convection, impurity content and growing interface shape. Especially, travelling magnetic fields (TMF) are of certain advantages. However, strong shielding effects appear when the TMF coils are placed outside the growth vessel. To achieve a solution of industrial relevance within the framework of the $KRISTMAG^{(R)}$ project inner heater-magnet modules(HMM) for simultaneous generation of temperature and magnetic field have been developed. At the same time, as the temperature is controlled as usual, e.g. by DC, the characteristics of the magnetic field can be adjusted via frequency, phase shift of the alternating current (AC) and by changing the amplitude via the AC/DC ratio. Global modelling and dummy measurements were used to optimize and validate the HMM configuration and process parameters. GaAs and Ge single crystals with improved parameters were grown in HMM-equipped industrial liquid encapsulated Czochralski (LEC) puller and commercial vertical gradient freeze (VGF) furnace, respectively. The vapour pressure controlled Czochralski (VCz) variant without boric oxide encapsulation was used to study the movement of floating particles by the TMF-driven vortices.

• Ocean and Polar Research
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• v.24 no.2
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• pp.167-175
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• 2002

Sediment from six piston cores from the East Sea (Sea of Japan) was analyzed for evidence of paleoceanographic changes and paleoclimatic variation. A distinct geochemical boundary is evident in major element concentrations and organic carbon content of most cores near the 10-ka horizon. This distinctive basal Holocene change is interpreted to be largely the result of changing sediment sources, an interpretation supported by TiO_2/Al_2O_3$ ratios. Organic carbon and carbonate contents also differ significantly between the Holocene and glacial intervals. The C/N ratio of organic matter is greater than 10 during the glacial period, but is less than 10 for the Holocene, suggesting that the influx of terrigenous organic matter was more volumetrically important than marine organic matter during glacial times. The chemical index of weathering (CIW) is higher for the Holocene than the glacial interval, and changes markedly at the basal Holocene geochemical boundary. Silt fractions are higher in the glacial interval, suggesting a strong effect of climate on silt particle transportation: terrigenous aluminosilicates and continental organic carbon transport were higher during glacial times than during the Holocene. Differences in sediment composition between the Holocene and glacial period are interpreted to have been climatically induced.