Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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The Change of I-V Characteristics by Gate Voltage Stress on Few Atomic Layered MoS2 Field Effect Transistors

수 원자층 두께의 MoS2 채널을 가진 전계효과 트랜지스터의 게이트 전압 스트레스에 의한 I-V 특성 변화

  • 이형규 (충북대학교 전자정보대학 전자공학부) ;
  • 이기성 (나노종합기술원)
  • Received : 2017.11.22
  • Accepted : 2018.01.05
  • Published : 2018.03.01
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Abstract

Atomically thin $MoS_2$ single crystals have a two-dimensional structure and exhibit semiconductor properties, and have therefore recently been utilized in electronic devices and circuits. In this study, we have fabricated a field effect transistor (FET), using a CVD-grown, 3 nm-thin, $MoS_2$ single-crystal as a transistor channel after transfer onto a $SiO_2/Si$ substrate. The $MoS_2$ FETs displayed n-channel characteristics with an electron mobility of $0.05cm^2/V-sec$, and a current on/off ratio of $I_{ON}/I_{OFF}{\simeq}5{\times}10^4$. Application of bottom-gate voltage stresses, however, increased the interface charges on $MoS_2/SiO_2$, incurred the threshold voltage change, and degraded the device performance in further measurements. Exposure of the channel to UV radiation further degraded the device properties.

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References

  1. F. Bonaccorso, Z. Sun, T. Hasan, and A. C. Ferrari, Nat. Photonics, 4, 611 (2010). [DOI: https://doi.org/10.1038/nphoton.2010.186]
  2. K. F. Mak, C. Lee, J. Hone, J. Shan, and T. F. Heinz, Phys. Rev. Lett., 105, 136805 (2010). [DOI: https://doi.org/10.1103/PhysRevLett.105.136805]
  3. D. K. Ban, W. H. Park, B. M. Jong, and J. Kim, J. Korean Inst. Electr. Electron. Mater. Eng., 30, 417 (2017). [DOI: https://doi.org/10.4313/JKEM.2017.30.7.417]
  4. T. Cao, G. Wang, W. Han, H. Ye, C. Zhu, J. Shi, Q. Niu, P. Tan, E. Wang, B. Liu, and J. Feng, Nat. Commun., 3, 887 (2012). [DOI: https://doi.org/10.1038/ncomms1882]
  5. J. Li and M. Ostling, Electronics, 4, 1033 (2015). [DOI: https://doi.org/10.3390/electronics4041033]
  6. J. Kang, W. Liu, and K. Banerjee, Appl. Phys. Lett., 104, 093106 (2014). [DOI: https://doi.org/10.1063/1.4866340]
  7. K. Cho, W. Park, J. Park, H. Jeong, J. Jang, T. Y. Kim, W. K. Hong, S. Hong, and T. Lee, ACS Nano, 7, 7751 (2013). [DOI: https://doi.org/10.1021/nn402348r]
  8. Y. Y. Illarionov, G. Rzepa, M. Waltl, T. Knobloch, A. Grill, M. M. Furchi, T. Mueller, and T. Grasser, 2D Mater., 3, 035004 (2016). [DOI: https://doi.org/10.1088/2053-1583/3/3/035004]
  9. Y. Park, H. W. Baac, J. Heo, and G. Yoo, Appl. Phys. Lett., 108, 083102 (2016). [DOI: https://doi.org/10.1063/1.4942406]
  10. K. J. Baek, Y. S. Kim, and K. Y. Na, Trans. Electr. Electron. Mater., 16, 254 (2015). [DOI: https://doi.org/10.4313/TEEM.2015.16.5.254]
  11. W. Long, H. Ou, J. M. Kuo, and K. K. Chin, IEEE Trans. Electron Dev., 46, 865 (1999). [DOI: https://doi.org/10.1109/16.760391]
  12. L. Yu, D. El-Damak, U. Radhakrishna, X. Ling, A. Zubair, Y. Lin, Y. Zhang, M. H. Chuang, Y. H. Lee, D. Antoniadis, J. Kong, A. Chandrakasan, and T. Palacios, Nano Lett., 16, 6349 (2016). [DOI: https://doi.org/10.1021/acs.nanolett.6b02739]