• Journal of IKEEE
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• v.12 no.2
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• pp.110-117
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• 2008

This paper presents a new Insulated Gate Bipolar Transistor(IGBT) based on Non Punch Through(NPT) IGBT structure for power switching device. The proposed structure has adding N+ beside the P-base region of the conventional IGBT structure. The added n+ diffusion of the proposed device ensure device has faster turn-off time and lower forward conduction loss than the conventional IGBT structure. But, added n+ region can reduce th breakdown voltage and latching current density of the proposed device due to its high doping concentration. This problems can be overcome by using diverter on the right side of the device. In the simulation results, turn-off time of the proposed device is 0.3us and the on-state voltage drop is 3V. The results show that the proposed device has superior characteristic than conventional structure.

• Transactions of Materials Processing
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• v.27 no.5
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• pp.301-313
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• 2018

In this paper, tensile test was performed on pure titanium sheet (CP Ti sheet) with HCP structure in each direction to evaluate mechanical and surface properties and analyze microstructural changes during plastic deformation. We also evaluated forming limits of Ti direction in dome-type punch stretching test using a non-contact three-dimensional optical measurement system. As a result, it was revealed the pure titanium sheet has strong anisotropic property in yield stress, stress-strain curve and anisotropy coefficient according to direction. It was revealed that twinning occurred when the pure titanium sheet was plastic deformed, and tendency depends differently on direction and deformation mode. Moreover, this seems to affect the physical properties and deformation of the material. In addition, it was revealed the pure titanium sheet had different surface roughness changes in 0 degree direction and 90 degree direction due to large difference of anisotropy, and this affects the forming limit. It was revealed the forming limit of each direction obtained through the punch stretching test gave higher value in 90 degree direction compared with forming limit in 0 degree direction.

• Transactions of the Korean Society of Mechanical Engineers
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• v.18 no.8
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• pp.2113-2122
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• 1994

The 3-D FEM analysis for simulating the stamping operation of planar anisotropic sheet metals with arbitrarily-shaped tools is introduced. An implicit, incremental, updated Lagrangian formulation with a rigid-viscoplastic constitutive equation is employed. Contact and friction are considered through the mesh-normal, which compatibly describes arbitrary tool surfaces and FEM meshes without depending on the explicit spatial derivatives of tool surfaces. The consistent full set of governing relations, comprising equilibrium equation and mesh-normal geometric constraints, is appropriately linearized. The linear triangular elements are used for depicting the formed sheet, based on membrane approximation. Barlat's non-quadratic anisotropic yield criterion(strain-rate potential) is employed, whose in-plane anisotropic properties are taken into account with anisotropic coefficients and non-quadratic function parameter. The planar anisotropic finite element formulation is tested with the numerical simulations of the stamping of an automotive hood inner panel and the drawing of a hemispherical punch. The in-plane anisotropic effects on the formability of both mild steel and aluminum alloy sheet metals are examined.

• International Journal of Precision Engineering and Manufacturing
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• v.4 no.3
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• pp.36-41
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• 2003

This paper describes a numerical analysis of a non-steady state porthole die extrusion, which is useful for manufacturing long tubes with a hollow section. Materials divided through several portholes are gathered within a chamber and are then welded under high pressure. This weldability classifies the quality of tube products and is affected by process variables and die shapes. However, porthole die extrusion has been executed based on the experience of experts, due to the complicated die assembly and the complexity of metal flow. In order to better assist the design of die and to obtain improvement of productivity, non-steady state 3D FE simulation of porthole die extrusion is required. Therefore, the objective of this study is to analyze the behavior of metal flow and to determine the welding pressure of hot extrusion products under various billet temperatures, bearing length, and tube thickness by FE analysis. The results of FE analysis are compared with those of experiments.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.70-70
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• 2009

In this paper, we proposed 2500V Non punch-through(NPT) Insulated gate bipolar transistor(IGBT) for high voltage industry application. we carried out optimal simulation for high efficiency of 2500V NPT IGBT according to size of device. In results, we obtaind design parameter with 375um n-drift thickness, 15um gate length, and 8um emitter windows. After we simulate with optimal parameter, we obtained 2840V breakdown voltage and 3.4V Vce,sat. These design and process parameter will be used designing of more 2000V NPT IGBT devices.

• Proceedings of the KIPE Conference
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• 2001.10a
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• pp.26-30
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• 2001

In this paper, transient characteristics of IGBT has been analytically solved to express the excess minority carrier distribution in active base region and the output voltage. Non-Punch Through(NPT) structure has been selected to prove the validity of the model. It is based on the equivalent circuit of MOSFET which supplies a low gain and a high level injection to the base of BJT. None of the quasi static conditions have been assumed to trace the transient characteristics. The basic elements of the model have been derived from the ambipolar transport theory. Theoretical predictions of the output voltages have been obtained with different lifetimes and compared with experimental and theoretical results available in the literature. From the analytical approach, good agreement has been obtained to provide reliable and fast output of the device.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.4
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• pp.273-279
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• 2010

In this paper, we proposed 2500 V Non punch-through(NPT) Insulated gate bipolar transistor(IGBT) for high voltage industry application. we carried out optimal simulation for high efficiency of 2500 V NPT IGBT according to size of device. In results, we obtaind design parameter with 375 um n-drift thickness, 15 um gate length, and 8um emitter windows. After we simulate with optimal parameter, we obtained 2840 V breakdown voltage and 3.4V Vce,sat. These design and process parameter will be used designing of more 2000 V NPT IGBT devices.

• Proceedings of the IEEK Conference
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• 2008.06a
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• pp.563-564
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• 2008

This paper presents a new Insulated Gate Bipolar Transistor(IGBT) for power switching device based on Non Punch Through(NPT) IGBT structure. The proposed structure has adding N+ beside the P-base region of the conventional IGBT structure. The proposed device has faster turn-off time and lower forward conduction loss than the conventional IGBT structure.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.4
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• pp.261-265
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• 2012

IGBT(insulated gate bipolar transistor) is outstanding device for current conduction capabilities. IGBT design to control the large power switching device for power supply, converter, solar converter, electric home appliances, etc. like this IGBT device can be used in many places so to increase the efficiency of the various structures are coming. in this paper optimization design of planar type IGBT and planar field stop IGBT, and both devices have a comparative analysis and reflection of the electrical characteristics.

• Transactions on Electrical and Electronic Materials
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• v.17 no.1
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• pp.50-55
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• 2016

In this paper, we have analyzed the electrical characteristics of 1200V trench gate field stop IGBT and have compared to NPT planar type IGBT and NPT planar field stop IGBT. As a result of analyzing, we obtained superior electrical characteristics of trench gate field stop IGBT than conventional IGBT. To begin with, the breakdown voltage characteristic was showed 1,460 V and on state voltage drop was showed 0.7 V. We obtained 3.5 V threshold voltage, too. To use these results, we have extracted optimal design and process parameter and designed trench gate field stop IGBT. The designed trench gate IGBT will use to inverter of renewable energy and automotive industry.