• Journal of the Institute of Electronics Engineers of Korea SD
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• 제38권11호
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• pp.765-770
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• 2001

Metal-ferroelectric-insulator- semiconductor(MFTS) devices by using rapid thermal annealed (RTA) LiNbO$_3$/AIN/Si(100) structures were successfully fabricated and demonstrated nonvolatile memory operations. Metal-insulator-semiconductor(MIS) C-V properties with high dielectric AIN thin films showed no hysteresis and good interface properties. The dielectric constant of the AIN film calculated from the capacitance at the accumulation region in the capacitance-voltage(C-V) characteristics was about 8. The C-V characteristics of MFIS capacitor showed a hysteresis loop due to the ferroelectric nature of the LiNbO$_3$ thin films. Typical dielectric constant value of LiNbO$_3$ film of MFIS device was about 23. The memory window width was about 1.2 V at the gate voltage of $\pm$5 V ranges. Typical gate leakage current density of the MFIS structure was the order of 10$^{-9}$ A/$\textrm{cm}^2$ at the range of within $\pm$500 kV/cm. The ferroelectric capacitors showed no polarization degradation up to about 10$^{11}$ switching cycles when subjected to symmetric bipolar voltage pulse(peak-to-peak 8 V, 50 % duty cycle) in the 500 kHz.

• Proceedings of the Korean Vacuum Society Conference
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.221-221
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• 2010

NiO 산화물 타겟을 이용한 RF 마그네트론 스퍼터 방법로 glass 기판 위에 NiO 온도를 R.T(room temperature)~$400^{\circ}C$ 변화시켜 Ar 가스만을 사용하여 박막을 증착시켜, 증착 온도에 따라 NiO 박막 특성에 미치는 영향을 조사하였다. XRD 측정으로부터 증착된 박막의 결정구조는 $200^{\circ}C$이하에서 (111) 면의 우선 배향성으로 보이다가 $300^{\circ}C$ 이상에서 (220)의 우선 배향성으로 보이는 다결정 입방구조임을 확인하였다. NiO 박막의 전기적 특성의 변화는 기판의 온도가 $200^{\circ}C$까지는 $10^5\;{\Omega}cm$대를 보였고 기판의 온도가 $300^{\circ}C$ 이상에서는 $10^{-2}{\sim}10^{-1}{\Omega}cm$대로 감소하는 것을 관측하였다. 이러한 ${\sim}10^7$ 정도의 큰 저항 변화를 관측하였고, 전기적 변화 특성을 결정성, 결정립의 변화 및 NEXAFS를 통한 밴드 구조 변화 등으로 설명하였다.

• Journal of Power System Engineering
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• 제14권6호
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• pp.13-19
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• 2010

이 논문에서는 디젤자동차용 LNT와 SCR 촉매의 NO, $NH_3$ 흡착 및 탈리의 기본 특성과 수열화 온도와 시간 및 정량화된 황피독 농도에 대한 de-$NO_x$ 촉매의 내구성을 평가하였다. LNT 촉매는 열적으로 열화됨에 따라 Pt 및 Ba의 소결 및 응집으로 활성이 떨어져 $NO_x$ 전환율은 감소하였다. 반면에 Pt의 비활성화로 중간생성물인 $NH_3$ 생성량은 증가하였으며, 이때 생성된 $NH_3$는 LNT+SCR 복합시스템의 SCR 촉매의 환원제 역할을 담당한다. 1.0 g/L 이상의 황이 피독된 LNT 촉매는 탈황을 하여도 질소 산화물 흡장물질(Ba) 의 성능이 회복이 되지 않아 $NO_x$ 전환율은 회복되지 않았으며, 탈황 후 Pt 재활성화로 인해 NO2 및 SCR 환원제인 $NH_3$ 생성량은 증가하였다. SCR 촉매의 $NO_x$ 전환율은 $700^{\circ}C$ 36h, $800^{\circ}C$ 24h로 수열화 시킨 촉매는 전이금속 입자 성장 및 zeolite 구조 파괴로 인하여 급격하게 떨어졌으며, 0.36 g/L 황 피독된 촉매는 zeolite가 가지는 강산성 특정으로 내피독성이 강하여 탈황시 $NO_x$ 전환율은 회복되었다.

• Journal of IKEEE
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• 제23권3호
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• pp.756-761
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• 2019

In this paper, we propose SC-SJ(Shielding Connected-Super Junction) UMOSFET structure in which p-pillars of conventional 4H-SiC Super Junction UMOSFET structures are placed under the shielding region of UMOSFET. In the case of the proposed SC-SJ UMOSFET, the p-pillar and the shielding region are coexisted so that no breakdown by the electric field occurs in the oxide film, which enables the doping concentration of the pillar to be increased. As a result, the on-resistance is lowered to improve the static characteristics of the device. Through the Sentaurus TCAD simulation, the static characteristics of proposed structure and conventional structure were compared and analyzed. The SC-SJ UMOSFET achieves a 50% reduction in on-resistance compared to the conventional structure without any change in the breakdown voltage.

• Journal of the Korean Chemical Society
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• 제39권7호
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• pp.552-558
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• 1995

The tetranuclear complexes, $X_2[M_{O4}O_12{R'C(NH_2)NO}_2](X= n-Bu_4N^+$, $R'=(CH_3)_2CH$, $CH_3CH_2CH_2$, $CH_3SCH_2$; $X=(CH_3)_2CHC(=NH_2)NH_2^+$, $R'=(CH_3)_2CH$; $X = CH_3CH_2CH_2C(=NH_2)NH_2^+$, $R'=CH_3_CH_2CH_2$; $X=CH_3SCH_2C(=NH_2)NH_2^+$, $R'=CH_3SCH_2)$ have been synthesized by the reactions of monomeric and polynuclear complexes with isobutyl-, butyl- and thiomethylacetamidoxime. The prepared complexes were identified by elemental analysis, infrared, $^1H$ NMR and $^{13}C$ NMR spectroscopy. The structure of complex ${(CH_3)_2CHC(NH_2)_2}_2[M_{O4}O_{12}{(CH_3)_2CHC(NH_2)NO}_2]$ was determined by X-ray single crystal diffraction. Crystal data are follows: Monoclinic, $P2_{1/c}$, $a=10.168(3){\AA}$, $b=11.768(1){\AA}$, $c=13.557(1){\AA}$, ${\beta}=102.08(1)^{\circ}$, $V=1586.2(5){\AA}^3$, Z=2, final R=0.026 for 2951($F_0>3s(F_0)$). This complex is composed of a planar cyclic $[Mo_4({\mu}-O)_4]$ and two ${\mu}_4$-amidoximate.

• Proceedings of the Korean Institute of Building Construction Conference
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• 한국건축시공학회 2019년도 추계 학술논문 발표대회
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• pp.170-171
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• 2019

When the cement paste in concrete is exposed to high temperatures, the mechanical performance decreases due to a series of reactions inside the cement. In this study, we investigated the change of nanostructure of $C_3S$ when $C_3S$ was exposed to high temperature using pair distribution function (PDF) based on high energy X-ray scattering. As a result of X-ray diffraction, there was no significant difference when $C_3S$ was heated at $300^{\circ}C$, but most of $Ca(OH)_2$ was decomposed into CaO at $500^{\circ}C$. In addition, it was confirmed that CaO is dominant in the nanostructure when $C_3S$ is heated to $500^{\circ}C$.

• Journal of the Korean Vacuum Society
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• 제20권3호
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• pp.211-216
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• 2011

In this study, the effects of growth temperature on structural and optical properties of hydrothermally grown ZnO nanorod arrays have been investigated. Zinc nitrate ($Zn(NO_3)_2$) and hexamethylenetetramine were used as precursors. The ZnO buffered Si(100) with a thickness of 40 nm was used as the substrates. The ZnO nanorods were grown on these substrates with the temperature ranging from 55 to $115^{\circ}C$. The results were characterized by scanning electron microscope, X-ray diffraction and room temperature photoluminescence measurements. Well-aligned ZnO nanorods arrays were obtained from all samples. The tips of nanorods were flat when the temperature was less than $95^{\circ}C$, and the sharp-tip nanoneedle-like morphologies were obtained with the temperature of $115^{\circ}C$. In addition, some bundles were on the nanorods arrays with $115^{\circ}C$ due to the non-equilibrium growth. The growth temperature could affect the crystal and optical properties of ZnO. For the effects on crystal properties, the intensity of (002) peak was increased as the temperature was increased to $75^{\circ}C$, then decreased as the temperature was further increased to $115^{\circ}C$. As for the effects on optical properties, the intensity ratio of UV peak to visible peak is increased with the temperature increasing and the strongest UV peak intensity was obtained with the growth temperature of $95^{\circ}C$.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 한국정보통신학회 2016년도 춘계학술대회
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• pp.174-177
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• 2016

Wireless network-on-chip (WNoC) can alleviate critical path problem of existing typical NoCs by integrating radio-frequency module on router. In this paper, core-connection-aware genetic algorithm-based core and WIR mapping methodology at small world WNoC is presented. The methodology could optimize the critical path between cores with heavy communication. The 33% of average latency improvement is achieved compared to random mapping methodology.

• The Korean Journal of Applied Statistics
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• 제7권2호
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• pp.289-297
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• 1994

A block design will be said to have Property C if the concordance matrix can be expressed as a linear combination of Kronecker product of permutation matrices. No matrix inversions are necessary for the intrablock analysis of the block designs which possesses the Property C(Paik, 1985). In this paper, in order to show the Li type PBIB designs possesses the Property C, we suggest the structure of the concordance matrices of Li type PBIB designs are multi-nested block circulant pattern.

• Korean Journal of Materials Research
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• 제9권11호
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• pp.1083-1087
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• 1999

Microstructures and the gas-sensing characteristics of the $\textrm{SnO}_2$ thin films were studied, which were deposited at various conditions (rf power, sample temperature, $\textrm{O}_2$/Ar ratio) by the rf magnetron sputtering. As a result, six typical microstructures were derived, such as amorphous(A), amorphous mixed with polycrystalline grains (A+P), polycrystalline with random crystalographic orientation (P), fine columnar (FC), coarse columnar (CC) and Zone T (T) with dense fiberous structure. Typically, A, A+ P, and P structures were formed when no $\textrm{O}_2$ was added to the sputter gas, whereas FC, CC, and T structures were obtained when $\textrm{O}_2$ was added. The A structure formed at low rf power and low temperature, the A+P at high rf power and low temperature, and the P at high rf power and high temperature. The FC structure was obtained at low rf power and low temperature. the CC at low rf power and high temperature, and the T at high rf power and low temperature. Results of the gas-sensing test of the sensor chips fabricated from the typical films indicated that the fine columnar microstructure shows the highest sensitivity both at $300^{\circ}C$ and $400^{\circ}C$. It was proposed that this is due to the high specific surface area of the micro-columns.