• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.2
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• pp.130-138
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• 2006

We have investigated pattern scaling down of silicon stamps through the oxidation technique, During oxidizing the silicon stamps, silicon dioxide that has 300 nm and 500 nm thickness was grown, and critical deformations were not observed in the patterns. There was positive effect to reduce size of patterns because vertical and horizontal patterns have different orientation. We achieved pattern reduction rate of $26\%$. In addition, the formation of polymer patterns had been investigated with varied temperature and pressure conditions to improve the filling characteristics of polymers during nanoimprint lithography when pattern sizes were few micrometers. In these varied conditions, polymers had been affected by free space compensation and elastic stress relaxation for filling the cavities. Based on the results, defect control which is an important issue in the nanoimprint lithography were facilitated.

• Proceedings of the KSME Conference
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• 2003.04a
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• pp.1069-1072
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• 2003

Ultraviolet-nanoimprint lithography (UV-NIL) is a promising nanoimprint method for cost-effectively defining nanometer scale structures at room temperature and low pressure. Nanostamp fabrication technology is a key technology for UV-NIL because fabricating a high resolution nanostamp is the first step for defining high resolution nanostructures in a substrate. We used quartz as an UV transparent stamp material for the UVNIL. A $5{\times}5{\times}0.09$ inch stamp was fabricated using the quartz etch process in which Cr film was used as a hard mask for transferring nanostructures into the quartz. In this paper, we describe the quartz etching process and discuss the results including SEM images.

• Journal of the Semiconductor & Display Technology
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• v.10 no.4
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• pp.89-94
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• 2011

In recent years there have been considerable attentions on nanoimprint lithography (NIL) by the display device and semiconductor industry due to its potential abilities that enable cost-effective and high-throughput nanofabrication. A major disadvantage of thermal NIL is the thermal cycle, that is, heating over glass transition temperature and then cooling below it, which requires a significant amount of processing time and limits the throughput. One of the methods to overcome this disadvantage is to improve the cooling performance in NIL process. In this paper, a numerical analysis model of cooling system in thermal NIL was development by CAD/CAE program and the performance of the cooling system was analyzed by the model. The calculated temperatures of nanoimprint device were verified by the measurements. By using the analysis model, the case that the cooling material is replaced by liquid nitrogen is investigated.

• Proceedings of the KSME Conference
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• 2005.11a
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• pp.233.2-233.2
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• 2005

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2013.05a
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• pp.573-574
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• 2013

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2010.05a
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• pp.543-544
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• 2010

• Journal of the Korean Society for Precision Engineering
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• v.22 no.2
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• pp.7-15
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• 2005

• Proceedings of the Materials Research Society of Korea Conference
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• 2008.05a
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• pp.26.1-26.1
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• 2008

• Journal of the Korean Society for Precision Engineering
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• v.20 no.3
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• pp.15-22
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• 2003

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2007.11a
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• pp.131-132
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• 2007