• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.9
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• pp.755-758
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• 2012

We developed a new solar simulator to evaluate a large-scale solar cell using seven kinds of LEDs (Infrared, Red, Yellow, Green, Blue, White and Ultra Violet LED). LED solar simulator can be displaced the existing solar simulator which has several demerits such as high power consumption and short lifetime. We have tried to fabricate LED solar simulator which fulfills the spectrum for AM 1.5G condition, and to verify the feasibility of LED solar simulator.

• JSTS:Journal of Semiconductor Technology and Science
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• v.9 no.1
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• pp.55-60
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• 2009

The channel backscattering coefficient and injection velocity have been extracted experimentally in 65nm MOSFETs. Thanks to an experimental extraction methodology taking into account multi-subband population, we demonstrate that the short channel ballistic efficiency is slightly greater than long channel ballistic efficiency.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.1
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• pp.80-82
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• 2013

White light emitting diode (LED) determined the most appropriate color temperature in reading lighting evaluated fatigue degree of eye according to color temperature. The eye fatigue degrees are determined by brightness and color temperature. Therefore, we measured the results of eyes test according to the change of color temperature and brightness. Experiments except for astigmatic corrected visual acuity of 0.8 more and age 20 to 25 years old, male and female college students was conducted in 100 patients. And constant illumination conditions, visual acuity was measured by varying the color temperature. The optometry at 10 minutes in the darkroom adapted eye. And then the temperature of $25{\pm}3$ degrees, the humidity was carried out at $50{\pm}5%$. As a result of typical color temperature of white light (5,600 K) has identification of the readability.

• Journal of the Semiconductor & Display Technology
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• v.21 no.1
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• pp.95-102
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• 2022

Since the organic light-emitting diodes (OLEDs) have been widely investigated as next-generation displays, it has been successfully commercialized as a flexible and rollable display. However, there is still wide room and demand to improve the device characteristics such as power efficiency and lifetime. To solve this issue, there has been a wide research effort, and among them, the internal and the external light extraction techniques have been attracted in this research field by its fascinating characteristic of material independence. In this study, a micro-nano composite structured external light extraction layer was demonstrated. A reactive ion etching (RIE) process was performed on the surfaces of hexagonally packed hemisphere micro-lens array (MLA) and randomly distributed sphere diffusing films to form micro-nano composite structures. Random nanostructures of different sizes were fabricated by controlling the processing time of the O₂ / CHF₃ plasma. The fabricated device using a micro-nano composite external light extraction layer showed 1.38X improved external quantum efficiency compared to the reference device. The results prove that the external light extraction efficiency is improved by applying the micro-nano composite structure on conventional MLA fabricated through a simple process.

• JSTS:Journal of Semiconductor Technology and Science
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• v.15 no.4
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• pp.454-461
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• 2015

Light enhancement of GaN based light emitting diodes (LEDs) have been investigated by texturing the top p-GaN surface. Nano-textured LEDs have been fabricated using self-assembled Ni nano mask during dry etching process. Experimental results were further compared with simulation data. Three types of LEDs were fabricated: Conventional (planar LED), Surface nano-porous (porous LED) and Surface nano-cluster (cluster LED). Compared to planar LED there were about 100% and 54% enhancement of light output power for porous and cluster LED respectively at an injection current of 20 mA. Moreover, simulation result showed consistency with experimental result. The increased probability of light scattering at the nano-textured GaN-air interface is the major reason for increasing the light extraction efficiency.

• Proceedings of the Korean Magnestics Society Conference
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• 2014.05a
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• pp.42-43
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• 2014

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.388-388
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• 2012

In this letter, We have investigated cell characteristics of the alloy FePt-NDs charge trapping memory capacitors with high-k $Al_2O_3$ dielectrics as a blocking oxide. The capacitance versus voltage (C-V) curves obtained from a representative MOS capacitor embedded with FePt-NDs synthesized by the post deposition annealing (PDA) treatment process exhibit the window of flat-band voltage shift, which indicates the presence of charge storages in the FePt-NDs. It is shown that NDs memory with high-k $Al_2O_3$ as a blocking oxide has performance in large memory window and low leakage current when the diameter of ND is below 2 nm. Moreover, high-k $Al_2O_3$ as a blocking oxide increases the electric field across the tunnel oxide, while reducing the electric field across the blocking layer. From this result, this device can achieve lower P/E voltage and lower leakage current. As a result, a FePt-NDs device with high-k $Al_2O_3$ as a blocking oxide obtained a~7V reduction in the programming voltages with 7.8 V memory.

• Journal of Convergence for Information Technology
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• v.10 no.2
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• pp.96-101
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• 2020

In micro-sized light emitting diodes, which are increasingly attentions as the light sources of displays and semiconductor lighting, increasing the amount of light and improving the luminous efficiency are very important and various development directions and methods have been proposed. In this study, the design of 3-dimensional nano structures through nano frame formation and the application of a nano pattern and a reactive etching method were proposed. And it will also be discussed that nano pillar arrays with nano cavities having improved verticality can be applied to semiconductor light sources through the development of nano frame structures.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.20 no.1
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• pp.1-6
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• 2010

CuInGaSe(CIGS) mixed-source was prepared by hydride vapor phase epitaxy (HVPE). Each metal was mixed in regular ratio and soaked at $1090^{\circ}C$ for 90 minutes in nitrogen atmosphere. After making the mixed-source to powder state, the pellet was made by the powder. The diameter of pellet is 10 mm. The CIGS thin film was deposited on soda lime glass evaporated Mo layer bye-beam evaporator. To confirm the crystallization, we measured X-ray diffraction (XRD). High intensity X-ray peaks diffracted from (112), (204)/(220), (116)/(312) and (400) of CIGS thin film and from (110) of Mo were confirmed by XRD measurement.

• JSTS:Journal of Semiconductor Technology and Science
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• v.8 no.2
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• pp.115-120
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• 2008

Carrier velocity in the MOSFET channel is the main driving force for improved transistor performance with scaling. We report measurements of the drift velocity of electrons and holes in silicon inversion layers. A technique for extracting effective carrier velocity which is a more accurate extraction method based on the actual inversion charge measurement is used. This method gives more accurate result over the whole range of $V_{ds}$, because it does not assume a linear approximation to obtain the inversion charge and it does not limit the range of applicable $V_{ds}$. For a very short channel length device, the electron velocity overshoot is observed at room temperature in 37 nm MOSFETs while no hole velocity overshoot is observed down to 36 nm. The electron velocity of short channel device was found to be strongly dependent on the longitudinal field.