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http://dx.doi.org/10.6111/JKCGCT.2010.20.1.001

Characterizations of CuInGaSe(CIGS) mixed-source and the thin film  

Lee, Ah-Reum (Department of Nano Semiconductor Engineering, Korea Maritime University)
Jeon, Hun-Soo (Department of Nano Semiconductor Engineering, Korea Maritime University)
Lee, Gang-Suok (Department of Nano Semiconductor Engineering, Korea Maritime University)
Ok, Jin-Eun (Department of Nano Semiconductor Engineering, Korea Maritime University)
Cho, Dong-Wan (Department of Nano Semiconductor Engineering, Korea Maritime University)
Kim, Kyung-Hwa (Department of Nano Semiconductor Engineering, Korea Maritime University)
Yang, Min (Department of Nano Semiconductor Engineering, Korea Maritime University)
Yi, Sam-Nyeong (Department of Nano Semiconductor Engineering, Korea Maritime University)
Ahn, Hyung-Soo (Department of Nano Semiconductor Engineering, Korea Maritime University)
Cho, Chae-Ryong (Department of Nanomedical Engineering, Pusan National University)
Son, Sang-Ho (Department of Physics Education, Kyungpook National University)
Ha, Henry (CSsol Co. Ltd)
Publication Information
Journal of the Korean Crystal Growth and Crystal Technology / v.20, no.1, 2010 , pp. 1-6 More about this Journal
Abstract
CuInGaSe(CIGS) mixed-source was prepared by hydride vapor phase epitaxy (HVPE). Each metal was mixed in regular ratio and soaked at $1090^{\circ}C$ for 90 minutes in nitrogen atmosphere. After making the mixed-source to powder state, the pellet was made by the powder. The diameter of pellet is 10 mm. The CIGS thin film was deposited on soda lime glass evaporated Mo layer bye-beam evaporator. To confirm the crystallization, we measured X-ray diffraction (XRD). High intensity X-ray peaks diffracted from (112), (204)/(220), (116)/(312) and (400) of CIGS thin film and from (110) of Mo were confirmed by XRD measurement.
Keywords
CIGS; Mixed-source; Selenization; XRD; HVPE; Pellet;
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