• Journal of Powder Materials
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• v.11 no.6 s.47
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• pp.467-471
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• 2004

In order to fabricate a high density sintered body of ITO, nano-sized ITO powders were synthesized by coprecipitation methods. Aqueous solutions of indium and tin salts were mixed and coprecipitated by changing their pH. Coprecipitated ITO powders possessed 20-30 nm crystallite size and a relatively high BET value ($35m^2/g$), however, aggregation of particles were occurred. Therefore, a novel recrystallization technique was applied in order to eliminate the aggregates. The recrystallized ITO material consists of a little bit larger needlelike crystals, $20nm{\times}80nm$, and it possesses a higher BET value $(57m^{2}/g)$ compared to the plain coprecipitated material $(35m^{2}/g)$. Metastable phase formation and higher content of aggregated particles were observed in the coprecipitated materials. Densification was 95% to 98% complete after 5 hour sintering at $1500^{\circ}C$ for the recrystallized powders while densities of the coprecipitated powders were below 75%.

• Journal of Powder Materials
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• v.11 no.1
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• pp.16-21
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• 2004

The nano-sized Co particles were successfully synthesized by chemical vapor condensation (CVC) process using the precursor of cobalt carbonyl ($Co_2(CO)_8$). The influence of carrier gases on the microstructure and magnetic properties of nanoparticles was investigated by means of XRD, TEM, XPS and VSM. The Co nano-particles with different phases and shapes were synthesized with a change of carrier gas : long string morphologies with coexistence of fcc and hcp structure in Ar carrier gas condition; finer Co core in a mass of cobalt oxide with only fcc structure in He; rod type cobalt oxide phase in Ar＋6vol％$O_2$. The saturation magnetization and coercivity was lower in Co nanoparticles synthesized in He carrier gas, due to their finer size.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.199-202
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• 2004

NFGM(Nano-Floating Gate Memory) is a very prospective candidate memory for the next generation with MRAM, PRAM, PoRAM. Among these memory devices for the next generation, NFGM has a lot of merits such as a simple low cost fabrication process, improved retention time, lower operating voltages, high speed program/erase time and so on. Therefore, many intensive researches for NFGM have been performed to improve device performance and reliability, which depends on the ability to control particle size, size distribution, crystallity, areal particle density and tunneling oxide quality. In this paper, we investigate the researches for NFGM up to recently.

• Transactions on Electrical and Electronic Materials
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• v.5 no.4
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• pp.143-147
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• 2004

Surface defects and bulk defects on SOI wafers are studied. Two new metrologies have been proposed to characterize surface and bulk defects in epitaxial layer transfer (ELTRAN) wafers. They included the following: i) laser scattering particle counter and coordinated atomic force microscopy (AFM) and Cu-decoration for defect isolation and ii) cross-sectional transmission electron microscope (TEM) foil preparation using focused ion beam (FIB) and TEM investigation for defect morphology observation. The size of defect is 7.29 urn by AFM analysis, the density of defect is 0.36 /cm$^2$ at as-direct surface oxide defect (DSOD), 2.52 /cm$^2$ at ox-DSOD. A hole was formed locally without either the silicon or the buried oxide layer (Square Defect) in surface defect. Most of surface defects in ELTRAN wafers originate from particle on the porous silicon.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.389-389
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• 2010

In this paper, an investigation of the benefits of gate oxide for 8" the manufacturing of Trench MOSFETs and its impact on device performance is presented. Layout dimensions of trench power MOSFETs have been continuously reduced in order to decrease the specific on-resistance, maintaining equal vertical dimensions. We discuss experimental results for devices with a pitch size down fabricated with an unconventional gate trench topology and a simplified manufacturing scheme. The fabricated Trench MOSFETs are observed the trench gate oxidation by SEM.

• Corrosion Science and Technology
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• v.12 no.3
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• pp.119-124
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• 2013

Nano-multilayered, crystalline AlTiSiN thin films were deposited on WC-TiC-Co substrates by the cathodic arc plasma deposition. The deposited film consisted of wurtzite-type AlN, NaCl-type TiN, and tetragonal $Ti_2N$ phases. Their oxidation characteristics were studied at 800 and $900^{\circ}C$ for up to 20 h in air. The WC-TiC-Co oxidized fast with large weight gains. By contrast, the AlTiSiN film displayed superior oxidation resistance, due mainly to formation of the ${\alpha}-Al_2O_3$-rich surface oxide layer, below which an ($Al_2O_3$, $TiO_2$, $SiO_2$)-intermixed scale existed. Their oxidation progressed primarily by the outward diffusion of nitrogen, combined with the inward transport of oxygen that gradually reacted with Al, Ti, and Si in the film.

• Journal of the Semiconductor & Display Technology
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• v.3 no.4
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• pp.45-49
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• 2004

We examined large particles and filter size effects of Central Chemical Supplying (CCS) system for STI-CMP on Light Point Defects (LPDs) after polishing. As manufacturing process recently gets thinner below 0.1 um line width, it is very important to keep down post-CMP micro-scratch and LPDs in case of STI-CMP. Therefore, we must control the size distribution of large particles in a slurry. With optimization of final filter size, CCS system is one of the solutions for this issue. The oxide and nitride CMP tests were accomplished using nano-ceria slurries made by ourselves. The number of large particles in a slurry and the number of LPDs on the wafer surface after CMP were reduced with decrease of the final filter size. Oxide removal rates slightly changed according to the final filter size, showing the good performance of self-made nano ceria slurries.

• Journal of the Korean institute of surface engineering
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• v.55 no.4
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• pp.196-201
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• 2022

This paper deals with anodic oxidation behavior of AZ31 Mg alloy in aqueous solutions containing various NaF concentrations from 0.01 M to 1 M. Three different voltage-time curves and anodic oxide formation behaviors appeared with concentration of NaF in deionized water. When NaF concentration is lower than 0.02 M, the voltage of AZ31 Mg alloy increased linearly and then reached a steady-state value more than 200 V, and large size pits and thin oxide layer were formed. When NaF concentration is between 0.05 M and 0.1 M, the voltage of AZ31 Mg alloy showed large periodic fluctuations of about 30 ~ 50 V around more than 200 V and large number of small particles were observed. If NaF concentration is higher than 0.2 M, PEO films can be formed without visible arcs under solution pH 6.5 ~ 7.5 by F^- ions without help of OH^- ions.

• Journal of the Korean Vacuum Society
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• v.17 no.1
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• pp.40-45
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• 2008

We present the effect of Ga-doping on the electrical, structural and optical properties of ZnO layers with a thickness of ${\sim}500nm$ deposited on glass substrates. Polycrystalline ZnO and Ga-doped ZnO (GZO) layers were deposited by radio frequency (rf) magnetron sputtering at room temperature. Based on the X-ray diffraction (XRD) and transmission electron microscopy (TEM) data, the crystalline quality of Ga-doped ZnO film was improved and GZO film has a preferred orientation along with the (002) crystal direction. The transmittance of the GZO film was enhanced by 10% in the visible region from that of the ZnO film. From photoluminescence (PL) data, the ratio of intensity of near band edge (NBE) emission to deep level (DL) emission was as high as 2.65:1 and 1.27:1 in the GZO and ZnO films, respectively. The res istivities of GZO and ZnO films were measured to be 1.27 and 1.61 $\Omega{\cdot}cm$, respectively. The carrier concentrations of ZnO and GZO film were approximately 1018 and 1020 $cm^2$/Vs, respectively. Based on our experimental results, the Ga-doping improves the electrical, structural and optical properties of ZnO film with potential application.

• Transactions on Electrical and Electronic Materials
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• v.13 no.2
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• pp.106-109
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• 2012

A low power methane gas sensor with microheater was fabricated by silicon bulk micromachining technology. In order to heat up the sensing layer to operating temperature, a platinum (Pt) micro heater was embedded in the gas sensor. The line width and gap of the microheater was 20 ${\mu}m$ and 4.5 ${\mu}m$, respectively. Zinc oxide (ZnO) nanowhisker arrays were grown on a sensor from a ZnO seed layer using a hydrothermal method. A 200 ml aqueous solution of 0.1 mol zinc nitrate hexahydrate, 0.1 mol hexamethylenetetramine, and 0.02 mol polyethylenimine was used for growing ZnO nanowhiskers. Temperature distribution of the sensor was analyzed by infrared thermal camera. The optimum temperature for highest sensitivity was found to be $250^{\circ}C$ although relatively high (64%) sensitivity was obtained even at as low a temperature as $150^{\circ}C$. The power consumption was 72 mW at $250^{\circ}C$, and only 25 mW at $150^{\circ}C$.