• Structural Engineering and Mechanics
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• v.19 no.3
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• pp.297-320
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• 2005

In recent years the pure displacement formulation for plate elements has not been as popular as other formulations. We revisit the pure displacement formulation for shear-deformable plate elements and propose a family of N-node, displacement-compatible, fully-integrated, pure-displacement, triangular, Mindlin plate elements, MIN-N. The development has been motivated by the relative simplicity of the pure displacement formulation and by the success of the existing 3-node plate element, MIN3. The formulation of MIN3 is generalized to obtain the MIN-N family, which possesses complete, fully compatible kinematic fields, in which the interpolation functions for transverse displacement are one degree higher than those for rotations. General element-level formulas for the thin-limit Kirchhoff constraints are developed. The 6-node, 18 degree-of-freedom element MIN6, with cubic displacement and quadratic rotations, is implemented and tested extensively. Numerical results show that MIN6 exhibits good performance for both static and dynamic analyses in the linear, elastic regime. The results illustrate that the fully-integrated MIN6 element has excellent performance in the thin limit, even for coarse meshes, and that it does not require shear relaxation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.104-104
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• 2009

Critical dimensions has rapidly shrunk to increase the degree of integration and to reduce the power consumption. However, it is accompanied with several problems like direct tunneling through the gate insulator layer and the low conductivity characteristic of poly-silicon. To cover these faults, the study of new materials is urgently needed. Recently, high dielectric materials like $Al_2O_3$, $ZrO_2$ and $HfO_2$ are being studied for equivalent oxide thickness (EOT). However, poly-silicon gate is not compatible with high-k materials for gate-insulator. To integrate high-k gate dielectric materials in nano-scale devices, metal gate electrodes are expected to be used in the future. Currently, metal gate electrode materials like TiN, TaN, and WN are being widely studied for next-generation nano-scale devices. The TaN gate electrode for metal/high-k gate stack is compatible with high-k materials. According to this trend, the study about dry etching technology of the TaN film is needed. In this study, we investigated the etch mechanism of the TaN thin film in an inductively coupled plasma (ICP) system with $O_2/BCl_3/Ar$ gas chemistry. The etch rates and selectivities of TaN thin films were investigated in terms of the gas mixing ratio, the RF power, the DC-bias voltage, and the process pressure. The characteristics of the plasma were estimated using optical emission spectroscopy (OES). The surface reactions after etching were investigated using X-ray photoelectron spectroscopy (XPS) and auger electron spectroscopy (AES).

• Journal of Sensor Science and Technology
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• v.24 no.5
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• pp.353-357
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• 2015

A new SPICE-compatible model for a gate/body-tied PMOSFET photodetector (GBT PD) with an overlapping control gate is presented. The proposed SPICE-compatible model of a GBT PD with an overlapping control gate makes it possible to control the photocurrent. Research into GBT PD modeling was proposed previously. However, the analysis and simulation of GBT PDs is not lacking. This SPICE model concurs with the measurement results, and it is simpler than previous models. The general GBT PD model is a hybrid device composed of a MOSFET, a lateral bipolar junction transistor (BJT), and a vertical BJT. Conventional SPICE models are based on complete depletion approximation, which is more applicable to reverse-biased p-n junctions; therefore, they are not appropriate for simulating circuits that are implemented with a GBT PD with an overlapping control gate. The GBT PD with an overlapping control gate can control the sensitivity of the photodetector. The proposed sensor is fabricated using a $0.35{\mu}m$ two-poly, four-metal standard complementary MOS (CMOS) process, and its characteristics are evaluated.

• Korean journal of applied entomology
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• v.21 no.1 s.50
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• pp.27-33
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• 1982

Thytealexin activities were investigated in compatible and incompatible combinations between rice cultivars and races of Pyricularia oryzae by using the spore-germination test in the diffusates from surface of leaf-blade treated with the spore suspensions. In compatible and incompatible combinations between nine cultivars of rice and three races of the fungus, phytoalexin activities were recognized in all combinations, and were much higher in incompatible combinations than in compatible combinations with significant differences. Activities of phytoalexin were increased with the time, and maximal peaks of them were at 36 hours after inoculation, and thereafter decreased. The activities were generally decreased in all combination by heavy applications of nitrogen fertilizer, especially in incompatible combinations. On the other hand, fresh juices from leaves of rice cultivars which were not inoculated with the fungus showed no phytoalexin activities.

• Journal of applied mathematics & informatics
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• v.20 no.1_2
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• pp.523-533
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• 2006

In this paper we have a common fixed point theorem which is a generalization of result of [12] and we characterize the conditions for continuous self mappings S, T of complete fuzzy metric space (X, M, *) have a uniqe common fixed point in X.

• Journal of the Korean Mathematical Society
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• v.41 no.5
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• pp.809-820
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• 2004

On $R^{2n}$, n$\geq$2, with the standard symplectic structure we construct compatible almost K hler metrics with negative scalar curvature on a polydisc which are Euclidean away from the polydisc.c.

• Journal of the Korean Mathematical Society
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• v.46 no.4
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• pp.841-857
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• 2009

In this paper, we give and study the notion of computer topological function space between computer topological spaces with $k_i$ adjacency, i $\in$ {0, 1}. Using this notion, we study various properties of topologies of a computer topological function space.

• JSTS:Journal of Semiconductor Technology and Science
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• v.3 no.4
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• pp.205-210
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• 2003

A 3-Transistor cell CMOS OTP ROM array using standard CMOS antifuse (AF) based on permanent breakdown of MOSFET gate oxide is proposed, fabricated and characterized. The proposed 3-T OTP cell for ROM array is composed of an nMOS AF, a high voltage (HV) blocking nMOS, and cell access transistor, all compatible with standard CMOS technology. The experimental results show that the proposed structure can be a viable technology option as a high density OTP ROM array for modern digital as well as analog circuits.

• Korean Journal of Mathematics
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• v.31 no.4
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• pp.391-403
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• 2023

In this work, we establish common fixed point results by utilizing a variant of F-contraction in the framework of C^*-algebra valued metric spaces. We utilize E.A. and C.L.R. property possessed by the mappings to prove common fixed point results in the same metric settings. To validate the applicability of these common fixed point results, we provide illustrative examples too.

• The Plant Pathology Journal
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• v.16 no.1
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• pp.9-18
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• 2000

Using differential display techniques, a new acidic pathogenesis-related (PR) protein-1 cDNA (GMPRla) gene was isolated from a cDNA library of soybean (Glycinemax L.Merr, cultivar Jangyup) hypocotyls infected by Phytophthora sojae f. sp. glycines. The 741 bp of fulllength GMPRla clone contains an open reading frame of 525 nucleotides encoding 174 amino acid residues (pI 4.23) with a putative signal peptide of 27 amino acids in the N-terminus. Predicted molecular weight of the protein is 18,767 Da. The deduced amino acid sequence of GMPRla has a high level of identity with PR-1 proteins from Brassica napus, Nicotiana tabacum, and Sambucus nigra. The GMPRla mRNA was more strongly expressed in the incompatible than the compatible interaction. The transcript accumulation was induced in the soybbean hypocotyls by treatment with ethephon or DL-$\beta$-amino-n-butyric acid, but not by wounding. In situ hybridization data showed that GMPRIa mRNAs were usually localized in the vascular bundle of hypocotyl tissues, especially phloem tissue. Differences between compatible and incompatible interactions in the timing of GMPRla mRNA accumulation were remarkable, but the spatial distribution of GMPRla mRNA was similar in both interactions. However, more GMPRla mRNA was accumulated in soybean hypocotyls at 6 and 24 h after inoculation.