Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2009.06a
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- Pages.104-104
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- 2009
Etching Property of the TaN Thin Film using an Inductively Coupled Plasma
유도결합플라즈마를 이용한 TaN 박막의 식각 특성
- Um, Doo-Seung (School of Electrical and Electronics Engineering, College of Engineering, Chung-Ang University) ;
- Woo, Jong-Chang (School of Electrical and Electronics Engineering, College of Engineering, Chung-Ang University) ;
- Kim, Dong-Pyo (School of Electrical and Electronics Engineering, College of Engineering, Chung-Ang University) ;
- Kim, Chang-Il (School of Electrical and Electronics Engineering, College of Engineering, Chung-Ang University)
- 엄두승 (중앙대학교 공과대학 전자전기공학부) ;
- 우종창 (중앙대학교 공과대학 전자전기공학부) ;
- 김동표 (중앙대학교 공과대학 전자전기공학부) ;
- 김창일 (중앙대학교 공과대학 전자전기공학부)
- Published : 2009.06.18
Abstract
Critical dimensions has rapidly shrunk to increase the degree of integration and to reduce the power consumption. However, it is accompanied with several problems like direct tunneling through the gate insulator layer and the low conductivity characteristic of poly-silicon. To cover these faults, the study of new materials is urgently needed. Recently, high dielectric materials like