• Journal of the Korean Society of Propulsion Engineers
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• v.5 no.1
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• pp.49-59
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• 2001

Functionally gradient materials(FGMs) generally consist of different material components, such as ceramics and metals. Continuous changes in their composition, microstructure, porositys, and so on result in gradients in the properties of FGMs. In this study AlN/Al-$Al_3$Ti FGM cubes were fabricated by the powder metallurgical process, and the characteristics of the FGMs were investigated. Powders of Mg and Ti mixed with Al in different ratios or the stack of the mixed powders having a stepwisely controlled compositional gradient from one plane to another were formed in a steel mold. The more the composition of Mg and sintering temperature are increased, the more the amount of AlN is formed. AlN and $Al_3$Ti distributed with continuously gradient composition were detected by XRD analysis and also revealed in optical microstructures, and microhardness tests.

• Journal of computational fluids engineering
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• v.17 no.4
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• pp.16-23
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• 2012

Current display manufacturing processes apply thermal treatment of glass backplanes widely for hydrogen degassing, crystallization of thin-films, tempering, forming, and precompaction. Estimation of the characteristics of transient heating stages and thermal non-uniformities on a single glass substrate or in a stack of glasses are extremely helpful to understand non-homogeneity of mechanical and electronic features of nano/micro structures of end products. Based on simple heat transfer models and using an electric muffle furnace, temperature variations in a glass stack were predicted and measured for glass backplanes of $1.5{\times}1.85m^2$ in size and 0.7 mm in thickness. Except for the period of putting glass backplanes into the furnace, thermal radiation was the major heating mechanism for the treatment and theoretical predictions agreed well to the experimental temperatures on the backplanes. Using the theoretical model, thermal fields for a glass stack of glass-size, $2.2{\times}2.5m^2$, and of the number of sheets, 1 to 12, were calculated for practical design and manufacturing of the muffle furnace for large-scale displays, e.g. up to $8^{th}$ generation.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.167-167
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• 2011

Magnetic random access memory (MRAM) is one of the prospective semiconductor memories for next generation. It has the excellent features including nonvolatility, fast access time, unlimited read/write endurance, low operating voltage, and high storage density. MRAM consists of magnetic tunnel junction (MTJ) stack and complementary metal-oxide semiconductor (CMOS). The MTJ stack is composed of various magnetic materials, metals, and a tunneling barrier layer. For the successful realization of high density MRAM, the etching process of magnetic materials should be developed. Among various magnetic materials, FePt has been used for pinned layer of MTJ stack. The previous etch study of FePt magnetic thin films was carried out using $CH_4/O_2/NH_3$. It reported only the etch characteristics with respect to the variation of RF bias powers. In this study, the etch characteristics of FePt thin films have been investigated using an inductively coupled plasma reactive ion etcher in various etch chemistries containing $CH_4$/Ar and $CH_4/O_2/Ar$ gas mixes. TiN thin film was employed as a hard mask. FePt thin films are etched by varying the gas concentration. The etch characteristics have been investigated in terms of etch rate, etch selectivity and etch profile. Furthermore, x-ray photoelectron spectroscopy is applied to elucidate the etch mechanism of FePt thin films in $CH_4$/Ar and $CH_4/O_2/Ar$ chemistries.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.408-408
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• 2012

It is well known that magnetic random access memory (MRAM) is nonvolatile memory devices using ferromagnetic materials. MRAM has the merits such as fast access time, unlimited read/write endurance and nonvolatility. Although DRAM has many advantages containing high storage density, fast access time and low power consumption, it becomes volatile when the power is turned off. Owing to the attractive advantages of MRAM, MRAM is being spotlighted as an alternative device in the future. MRAM consists of magnetic tunnel junction (MTJ) stack and complementary metal- oxide semiconductor (CMOS). MTJ stacks are composed of various magnetic materials. FePt thin films are used as a pinned layer of MTJ stack. Up to date, an inductively coupled plasma reactive ion etching (ICPRIE) method of MTJ stacks showed better results in terms of etch rate and etch profile than any other methods such as ion milling, chemical assisted ion etching (CAIE), reactive ion etching (RIE). In order to improve etch profiles without redepositon, a better etching process of MTJ stack needs to be developed by using different etch gases and etch parameters. In this research, influences of $O_2$ gas on the etching characteristics of FePt thin films were investigated. FePt thin films were etched using ICPRIE in $CH_4/O_2/Ar$ gas mix. The etch rate and the etch selectivity were investigated in various $O_2$ concentrations. The etch profiles were studied in varying etch parameters such as coil rf power, dc-bias voltage, and gas pressure. TiN was employed as a hard mask. For observation etch profiles, field emission scanning electron microscopy (FESEM) was used.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.387-387
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• 2013

Currently, the flash memory and the dynamic random access memory (DRAM) have been used in a variety of applications. However, the downsizing of devices and the increasing density of recording medias are now in progress. So there are many demands for development of new semiconductor memory for next generation. Magnetic random access memory (MRAM) is one of the prospective semiconductor memories with excellent features including non-volatility, fast access time, unlimited read/write endurance, low operating voltage, and high storage density. MRAM is composed of magnetic tunnel junction (MTJ) stack and complementary metal-oxide semiconductor (CMOS). The MTJ stack consists of various magnetic materials, metals, and a tunneling barrier layer. Recently, MgO thin films have attracted a great attention as the prominent candidates for a tunneling barrier layer in the MTJ stack instead of the conventional Al2O3 films, because it has low Gibbs energy, low dielectric constant and high tunneling magnetoresistance value. For the successful etching of high density MRAM, the etching characteristics of MgO thin films as a tunneling barrier layer should be developed. In this study, the etch characteristics of MgO thin films have been investigated in various gas mixes using an inductively coupled plasma reactive ion etching (ICPRIE). The Cl2/Ar, CH3OH/Ar, and CH4/Ar gas mix were employed to find an optimized etching gas for MgO thin film etching. TiN thin films were employed as a hard mask to increase the etch selectivity. The etch rates were obtained using surface profilometer and etch profiles were observed by using the field emission scanning electron microscopy (FESEM).

• Current Applied Physics
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• v.18 no.11
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• pp.1268-1274
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• 2018

We have investigated the effects of chemical rounding (CR) on the surface passivation and/or antireflection performance of $AlO_{x^-}$ and $AlO_x/SiN_x:H$ stack-passivated pyramid textured $p^+$-emitters with two different boron doping concentrations, and on the performance of bifacial n-PERT Si solar cells with a front pyramid textured $p^+$-emitter. From experimental results, we found that chemical rounding markedly enhances the passivation performance of $AlO_x$ layers on pyramid textured $p^+$-emitters, and the level of performance enhancement strongly depends on boron doping concentration. Meanwhile, chemical rounding increases solar-weighted reflectance ($R_{SW}$) from ~2.5 to ~3.7% for the $AlO_x/SiN_x:H$ stack-passivated pyramid textured $p^+$-emitters after 200-sec chemical rounding. Consequently, compared to non-rounded bifacial n-PERT Si cells, the short circuit current density Jsc of 200-sec-rounded bifacial n-PERT Si cells with ~60 and ${\sim}100{\Omega}/sq$ $p^+$-emitters is reduced by 0.8 and $0.6mA/cm^2$, respectively under front $p^+$-emitter side illumination. However, the loss in the short circuit current density Jsc is fully offset by the increased fill factor FF by 0.8 and 1.5% for the 200-sec-rounded cells with ~60 and ${\im}100{\Omega}/sq$ $p^+$-emitters, respectively. In particular, the cell efficiency of the 200-sec-rounded cells with a ${\sim}100{\Omega}/sq$ $p^+$-emitter is enhanced as a result, compared to that of the non-rounded cells. Based on our results, it could be expected that the cell efficiency of bifacial n-PERT Si cells would be improved without additional complicated and costly processes if chemical rounding and boron doping processes can be properly optimized.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.358-358
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• 2010

To improve the programming/erasing speed and leakage current of multiple dielectric stack tunnel barrier engineering (TBE) Non-volatile memory, We propose a new concept called staggered structure of TBE memory. In this study, We fabricated staggered structure capacitor on $Si_3N_4$ stacked HfAlO and measured C-V curve that can observe tunneling characteristic of this device as various annealing temperature compared with that of single layer $SiO_2$ capacitor.

• Proceedings of the KIEE Conference
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• 2009.07a
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• pp.1086_1087
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• 2009

본 논문에서는 과도 응답 특성에 따른 고분자 전해질 연료전지(PEMFC)를 모델링하였다. 연료전지에 이러한 과도특성이 일어나는 것에 원인에 대하여 분석해보고, 실제 실험을 통해 과도특성이 일어나는 것을 확인하였다. 실험결과 파형을 분석하여 Matlab & Simulink를 이용하여 PEMFC의 과도 응답 특성을 모델링하였다.

• Proceedings of the Korean Magnestics Society Conference
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• 2015.05a
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• pp.156-157
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• 2015

we have presented the enhanced interlayer tunneling magnetoresistance in doped $La_{1+2x}Sr_{2-2x}Mn_2O_7$ single crystal below $T_C$. The drastically out-of-plane magnetoresistance observed in magnetic fields perpendicular to the bilayers indicates that spin-polarized magnetic layers in single crystal show as a stack of ordered spin valve.

• Proceedings of the Korean Vacuum Society Conference
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• 2008.08a
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• pp.156-156
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• 2008