Proceedings of the Korean Vacuum Society Conference (한국진공학회:학술대회논문집)
- 2011.02a
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- Pages.167-167
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- 2011
Investigation on Etch Characteristics of FePt Magnetic Thin Films Using a $CH_4$ /Ar Plasma
- Kim, Eun-Ho (Department of Chemical Engineering, Inha University) ;
- Lee, Hwa-Won (Department of Chemical Engineering, Inha University) ;
- Lee, Tae-Young (Department of Chemical Engineering, Inha University) ;
- Chung, Chee-Won (Department of Chemical Engineering, Inha University)
- Published : 2011.02.09
Abstract
Magnetic random access memory (MRAM) is one of the prospective semiconductor memories for next generation. It has the excellent features including nonvolatility, fast access time, unlimited read/write endurance, low operating voltage, and high storage density. MRAM consists of magnetic tunnel junction (MTJ) stack and complementary metal-oxide semiconductor (CMOS). The MTJ stack is composed of various magnetic materials, metals, and a tunneling barrier layer. For the successful realization of high density MRAM, the etching process of magnetic materials should be developed. Among various magnetic materials, FePt has been used for pinned layer of MTJ stack. The previous etch study of FePt magnetic thin films was carried out using
Keywords
- FePt thin films;
- Magnetic tunnel junction;
- Inductively coupled plasma reactive ion etching;
- $CH_4/Ar$ gas