• Proceedings of the Korean Information Science Society Conference
• /
• 2001.04a
• /
• pp.487-489
• /
• 2001

인터넷과 무선 이동통신 등이 보편화되면서 두 기술을 접목한 WAP(Wireless Application Protocol)[1]이 등장하였으며, 다수의 사용자 요구를 동시에 효율적으로 처리하면서 다양한 문서 단말기로부터 요청을 신속하게 처리할 수 있는 WAP 게이트웨이(gateway)에 대한 연구가 여러 연구 그룹에서 수행되고 있다. WAP 스택은 이러한 연구 중의 가장 기본적인 기술이다. 본 논문에서는 Java의 기본적인 서비스인 멀티쓰레드를 이용하고, 컨테이너 유효 리소스의 효율적 관리를 위해 접속 풀링(connection pooling) 기능을 적용하여 UDP(User Datagram Protocol)[4], WTP(Wireless Transaction Protocol)[2], WSP(Wireless Session Protocol)[3] 계층을 설계한다. 설계 방법론은 UML(Unified Modeling Language)을 사용한다.

• Korean Journal of Materials Research
• /
• v.14 no.10
• /
• pp.688-695
• /
• 2004

The capacitor contact barrier(CCB) layers have been introduced in the FeRAM integration to prevent the Pt/Al reaction during the back-end processes. Therefore, the interdiffusion and intermetallic formation in $Pt(1500{\AA})/Al(3000{\AA})$ film stacks were investigated over the annealing temperature range of $100\sim500^{\circ}C$. The interdiffusion in Pt/Al interface started at $300^{\circ}C$ and the stack was completlely intermixed after annealing over $400^{\circ}C$ in nitrogen ambient for 1 hour. Both XRD and SBM analyses revealed that the Pt/Al interdiffusion formed a single phase of $RtAl_2$ intermetallic compound. On the other hand, in the presence of TiN($1000{\AA}$) barrier layer at the Pt/Al interface, the intermetallic formation was completely suppressed even after the annealing at $500^{\circ}C$. These were in good agreement with the predicted effect of the TiN diffusion barrier layer. But the conventional TiN CCB layer could not perfectly block the Pt/Al reaction during the back-end processes of the FeRAM integration with the maximum annealing temperature of $420^{\circ}C$. The difference in the TiN barrier properties could be explained by the voids generated on the Pt electrode surface during the integration. The voids were acted as the starting point of the Pt/Al reaction in real FeRAM structure.

• Journal of Hydrogen and New Energy
• /
• v.28 no.6
• /
• pp.601-609
• /
• 2017

Hydrogen is a clean, endlessly produced energy and it is easy to store and transfer. So, hydrogen is regarded as next generation energy. Among various ways for hydrogen production, the way to produce hydrogen by water electrolysis can effectively respond to fossil fuel's depletion or climate change. As interest in hydrogen has increased, related research has been actively conducted in many countries. In this study, we analyzed the performance characteristics and safety of water electrolysis system. In this study, we analyzed the performance characteristics and safety of water electrolysis system. The items for safety performance evaluation of the water electrolysis system were derived through analysis of international regulations, codes, and standards on hydrogen. Also, a prototype of the overall safety performance evaluation station was designed and developed. The demonstration test was performed with a prototype $10Nm^3/h$ class water electrolysis system that operated stably under various pressure conditions while measuring the stack and system efficiency. At 0.7MPa, the efficiency of the alkaline water electrolysis stack and the system that used in this study was 76.3% and 49.8% respectively. Through the GC analysis in produced $H_2$, the $N_2$ (5,157ppm) and $O_2$ (1,646 ppm) among Ar, $O_2$, $N_2$, CO and $CO_2$ confirmed as main impurities. It can be possible that the result of this study can apply to establish the safety standards for the hydrogen production system by water electrolysis.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2010.02a
• /
• pp.406-406
• /
• 2010

일반적으로, 나노스케일의 MOS 소자에서는 게이트 절연체 두께가 감소함에 따라 tunneling effect의 증가로 인해 PID (plasma induced damage)로 인한 소자 특성 저하 현상을 감소하는 추세로 알려져 있다. 하지만 요즘 많이 사용되고 있는 high-k 게이트 절연체의 경우에는 오히려 더 많은 charge들이 trapping 되면서 PID가 오히려 더 심각해지는 현상이 나타나고 있다. 이러한 high-k 게이트 식각 시 현재는 주로 Hf-based wet etch나 dry etch가 사용되고 있지만 gate edge 영역에서 high-k 게이트 절연체의 undercut 현상이나 PID에 의한 소자특성 저하가 보고되고 있다. 본 연구에서는 이에 차세대 MOS 소자의 gate stack 구조중 issue화 되고 있는 metal gate 층과 gate dielectric 층의 식각공정에 각각 중성빔 식각과 중성빔 원자층 식각을 적용하여 전기적 손상 없이 원자레벨의 정확한 식각 조절을 해줄 수 있는 새로운 two step 식각 공정에 대한 연구를 진행하였다. 먼저 TiN metal gate 층의 식각을 위해 HBr과 $Cl_2$ 혼합가스를 사용한 중성빔 식각기술을 적용하여 100 eV 이하의 에너지 조건에서 하부층인 $HfO_2$와 거의 무한대의 식각 선택비를 얻었다. 하지만 100 eV 조건에서는 낮은 에너지에 의한 빔 스케터링으로 실제 패턴 식각시 etch foot이 발생되는 현상이 관찰되었으며, 이를 해결하기 위하여 먼저 높은 에너지로 식각을 진행하고 $HfO_2$와의 계면 근처에서 100 eV로 식각을 해주는 two step 방법을 사용하였다. 그 결과 anistropic 하고 하부층에 etch stop된 식각 형상을 관찰할 수 있었다. 다음으로 3.5nm의 매우 얇은 $HfO_2$ gate dielectric 층의 정확한 식각 깊이 조절을 위해 $BCl_3$와 Ar 가스를 이용한 중성빔 원자층 식각기술을 적용하여 $1.2\;{\AA}$/cycle의 단일막 식각 조건을 확립하고 약 30 cycle 공정시 3.5nm 두께의 $HfO_2$ 층이 완벽히 제거됨을 관찰할 수 있었다. 뿐만 아니라, vertical 한 식각 형상 및 향상된 표면 roughness를 transmission electron microscope(TEM)과 atomic force microscope (AFM)으로 관찰할 수 있었다. 이러한 중성빔 식각과 중성빔 원자층 식각기술이 결합된 새로운 gate recess 공정을 실제 MOSFET 소자에 적용하여 기존 식각 방법으로 제작된 소자 결과를 비교해 본 결과 gate leakage current가 약 one order 정도 개선되었음을 확인할 수 있었다.

• Journal of Environmental Health Sciences
• /
• v.33 no.3
• /
• pp.217-226
• /
• 2007

The purpose of this study is to estimate the emission factor of $non-CO_2$ global warming gases such as $N_2O$ and $CH_4$ by measuring concentrations from stacks of waste incinerators and cement production plants. Based on the established monitoring methods, $N_2O$ concentration measured from stacks in incinerator were between 0.62 and $40.60\;ppm_v$ (ave. $11.50\;ppm_v$). The concentration of $N_2O$ was dependent on the incinerator types. However, the concentrations of $CH_4$ gas were between 2.65 and $5.68\;ppm_v$ (ave. $4.22\;ppm_v$), and did not show the dependency on the incinerator types. In the cement production plant, the concentration ranges of $N_2O$ from the stack were from 6.90 to $10.80\;ppm_v$ (ave. $8.60\;ppm_v$), and $CH_4$ were between 1.80 and $2.20\;ppm_v$ (ave. $2.60\;ppm_v$). Using measured concentrations, the emission amounts of $N_2O$ and $CH_4$ from stacks per year were calculated. The results were is 4.2 ton $N_2O/yr$ in the incinerators, and 53.7 ton $N_2O/yr$ in the cement facilities. The big difference is from the flow rate of flue gas in the cement facilities compared to the incinerators. By the same reason, the $CH_4$ emission amounts in cement plant and incinerator was found to be 339 ton $CO_2/yr$ and 34.1 ton $CO_2/yr$, respectively. Finally, the emission factor of $N_2O$ in the incinerators were calculated using the measured concentration and the amount of incinerated wastes, and was $42.5\sim799.1\;g/ton$ in kiln and stoker type, $11.9\sim79.9\;g/ton$ in stoker type, 90.1 ton/g in rotary kiln type, 174.9 g/ton in fluidized bed type, and 63.8 g/ton in grate type, respectively. Also, the emission factors of $CH_4$ were found to 65.2-91.3 g/ton in kiln/stoker type, 73.9-122 g/ton in stoker type, 109.5 g/ton rotary kiln, and 26.1 g/ton in fluidized bed type. This result indicates that the emission factor in incinerators is strongly dependent on the incinerator types, and matched with result of IPCC (International Panel on Climate Change) guideline.

• Bulletin of the Korean Chemical Society
• /
• v.31 no.11
• /
• pp.3173-3179
• /
• 2010

New complex $[Mn(II)H_{1.5}L]_2[Mn(II)H_3L]_2(ClO_4)_5{\cdot}3H_2O$ (1), where $H_3L$ is tris {2-(4-imidazolyl)methyliminoethyl} amine (imtren), has been prepared by reacting manganese(II) perchlorate hexahydrate with the imtren ligand in methanol. X-ray crystallographic study revealed that the imtren ligand hexadentately binds to Mn(II) ion through the three Schiff-base imine N atoms and three imidazole N atoms with a distorted octahedral geometry, and the apical tertiary amine N atom of the ligand pseudo-coordinates to Mn(II), forming overall a pseudo-seven coordination environment. The hydrogen-bonds between imidazole and imidazolate of $[Mn(II)H_{1.5}L]^{0.5+}$ complex ions are extended to build a 2D puckered network with trigonal voids. $[Mn(II)H_3L]^{2+}$ complex ions constitutes another extended 2D puckered layer without hydrogen bonds. Two layers are wedged each other to constitute overall stack of the crystal. Peroxidase activity of complex 1 was examined by observing the oxidation of 2,2'-azinobis(3-ethylbenzothiazoline)-6-sulfonic acid (ABTS) with hydrogen peroxide in the presence of complex 1. Generation of $ABTS^{+{\cdot}}$ was observed by UV-vis and EPR spectroscopies, indicating that the complex 1, a fully-coordinated mononuclear Mn(II) complex with nitrogen-only ligand, has a heme-independent peroxidase activity.

• Journal of the Korean Institute of Gas
• /
• v.22 no.1
• /
• pp.1-8
• /
• 2018

FCV is installed with a automatic valve attached in an high pressure cylinder to control the hydrogen flow. The supply of hydrogen from the cylinder into the fuel cell stack is controlled via the on/off operation of a solenoid attached to the automatic valve. The solenoid needs to provide the necessary attraction force even at any saturation temperature caused by drive of the vehicle. In this study, the simplified prediction equations for the saturation temperature are suggested. The finite element analysis was performed by steady state technique, according to the boundary condition in order to predict the saturation temperature and attraction force. Finally, the saturation temperature was validated through comparison between the analysis results and measurement results. From the results, the measured saturation temperature $5.9^{\circ}C$ lower with respect to the analysis results. And the error of attraction force ranged from 1.0 to 2.1 N at testing conditions.

• Korean Journal of Materials Research
• /
• v.29 no.8
• /
• pp.463-468
• /
• 2019

The electrical and interfacial properties of $HfO_2/Al_2O_3$ and $Al_2O_3/HfO_2$ dielectrics on AlN/p-Ge interface prepared by thermal atomic layer deposition are investigated by capacitance-voltage(C-V) and current-voltage(I-V) measurements. In the C-V measurements, humps related to mid-gap states are observed when the ac frequency is below 100 kHz, revealing lower mid-gap states for the $HfO_2/Al_2O_3$ sample. Higher frequency dispersion in the inversion region is observed for the $Al_2O_3/HfO_2$ sample, indicating the presence of slow interface states A higher interface trap density calculated from the high-low frequency method is observed for the $Al_2O_3/HfO_2$ sample. The parallel conductance method, applied to the accumulation region, shows border traps at 0.3~0.32 eV for the $Al_2O_3/HfO_2$ sample, which are not observed for the $Al_2O_3/HfO_2$ sample. I-V measurements show a reduction of leakage current of about three orders of magnitude for the $HfO_2/Al_2O_3$ sample. Using the Fowler-Nordheim emission, the barrier height is calculated and found to be about 1.08 eV for the $HfO_2/Al_2O_3$ sample. Based on these results, it is suggested that $HfO_2/Al_2O_3$ is a better dielectric stack than $Al_2O_3/HfO_2$ on AlN/p-Ge interface.

• Elastomers and Composites
• /
• v.56 no.2
• /
• pp.92-99
• /
• 2021

Microstructure-dependent changes in the crystalline properties of poly(ethylene-co-vinyl acetate) (EVA) was investigated using various EVAs at different VA contents via X-ray diffraction (XRD). The parameters analyzed herein were percentage crystallinity (X_c), interplanar crystal spacing (d_hkl), crystal stack size (D_hkl), and the number of crystal plane piles (N_hkl). The X_cs of [110] and [200] crystals were 21.0-4.1 and 6.7-1.4%, respectively, and they decreased by approximately 2.3 and 0.7% for every mol% of the VA content, respectively. The X_c ratios of the [110] and [200] crystals were approximately 3. The d₁₁₀s and d₂₀₀s values were 0.41-0.42 and 0.37-0.38 nm, respectively. The D₁₁₀s and D₂₀₀s values were 9.56 -21.92 and 7.00-16.42 nm, respectively. The d_hkls increased with an increase in the VA content, whereas the D_hkls decreased. The N₁₁₀s and N₂₀₀s were 22.7-51.3 and 18.3-43.2, respectively, and they decreased by increasing the VA content. EVA with the same VA content showed different crystalline properties as per the suppliers, and some EVAs deviated from the average trends. This could be explained by the difference in their microstructures such as the sizes and distribution uniformity of the ethylene sequences in EVA chains.

• Journal of the Mineralogical Society of Korea
• /
• v.15 no.2
• /
• pp.95-103
• /
• 2002

The object of this study was to interpret the ralationship between expandability (% $S_{XRD}$), MacEwan crystallite thickness ( $N_{CSD}$), and mean fundamental particle thickness ( $N_{F}$ ) in illite-semctite mixed layer (I-S), quantitatively. This interpretation was extracted from comparison of two structural models (MacEwan crystallite model and fundamental particle model) of I-S mixed layers. In I-S structure, % $S_{XRD}$, $N_{CSD}$, and $N_{F}$ are not independent parameters but are related to each others by particular geometric relations. % $S_{XRD}$ is dependent on $N_{CSD}$ by short-stack effect, whereas, % $S_{XRD}$ and $N_{F}$ have relation to smectite interlayer number (Ns)=( $N_{F-}$1)/(100%/% $S_{XRD-}$ $N_{F}$ . Therefore, % $S_{XRD}$ and $N_{F}$ should satisfy a specific physical condition, 1< $N_{F}$ <100%/% $S_{XRD}$, because $N_{s}$ is positive. Based on this condition, this study suggested % $S_{XRD}$ vs $N_{F}$ diagram which can be used to interpret % $S_{XRD}$, $N_{F}$ , $N_{S}$ , and ordering, quantitatively. The diagram was examined by XRD data for I-S samples from Ceumseongsan volcanic complex, Korea. I-S samples showed that $N_{F}$ departs from the physical upper-limit ( $N_{F}$ =100%/% $S_{XRD}$) with decrease in % $S_{XRD}$. This phenomenon may happen due to decrease of stacking-capability of fundamental particles with their thickening.g.s with their thickening.g.