• Korean Journal of Medicinal Crop Science
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• v.9 no.1
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• pp.21-25
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• 2001

Major saponins in ginseng were analysed using reverse phase high performance liquid chromatography with binary mobile phase gradient control system instead of normal phase column. The optimum condition were as following : reverse phase column; ${\mu}{\beta}ondapak\;C_{18}$ column (Waters, $3.9mm{\times}300\;mm,\;5{\mu}m$), methyl cyanaide/water binary mobile phase gradient control system, solvent flow rate; 1.5 ml/min, and UV($203{\mu}m$ ) detector. The complete separation of ginsenoside $Rb_1,\;Rb_2,\;Rc,\;Rd,\;Re,\;Rf\;and\;Rg_1$ was achieved within 55 min. The Regression coefficients of the calibration curves for seven ginsenosides were 0.99.

• Journal of IKEEE
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• v.7 no.2 s.13
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• pp.236-244
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• 2003

In this paper, RF and IF circuits for mobile terminals which have usually been implemented using expensive BiCMOS processes are designed using CMOS circuits, and a Tx CMOS RF/IF single chip for PCS applications is designed. The designed circuit consists of an IF block including an IF PLL frequency synthesizer, an IF mixer, and a VGA and an RF block including a SSB RF mixer and a driver amplifier, and performs all transmit signal processing functions required between digital baseband and the power amplifier. The phase noise level of the designed IF PLL frequency synthesizer is -114dBc/Hz@100kHz and the lock time is less than $300{\mu}s$. It consumes 5.3mA from a 3V power supply. The conversion gain and OIP3 of the IF mixer block are 3.6dB and -11.3dBm. It consumes 5.3mA. The 3dB frequencies of the VGA are greater than 250MHz for all gain settings. The designed VGA consumes 10mA. The designed RF block exhibits a gain of 14.93dB and an OIP3 of 6.97dBm. The image and carrier suppressions are 35dBc and 31dBc, respectively. It consumes 63.4mA. The designed circuits are under fabrication using a $0.35{\mu}m$ CMOS process. The designed entire chip consumes 84mA from a 3V supply, and its area is $1.6㎜{\times}3.5㎜$.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.48 no.1
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• pp.56-61
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• 2011

This paper describes design of a programmable frequency synthesizer for RF PLL with $0.18{\mu}m$ silicon CMOS technology being used as an application of the UWB system like MBOA. To get good performance of speed and noise super dynamic circuits was used, and to get programmable division ratio switching circuits was used. Especially to solve narrow bandwidth problem of the dynamic circuits load resistance value of unit divider block was varied. Simulation results of the designed circuit shows very fast and wide operation characteristics as 1~14GHz frequency range.

• Journal of the Korean Vacuum Society
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• v.20 no.5
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• pp.345-355
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• 2011

GaAs-based metamorphic high electron mobility transistors (MHEMTs) and InP-based high electron mobility transistors (HEMTs) have good microwave and millimeter-wave frequency performance with lower minimum noise figure. MHEMTs have some advantages, especially for cost, compared with InP-based ones. In this paper, InAlAs/InxGa1-xAs/GaAs MHEMTs are simulated for DC/RF small-signal analysis. The hydrodynamic simulation parameters are calibrated to a fabricated 0.1-${\mu}m$ ${\Gamma}$-gate MHEMT device having the modulation-doped $In_{0.52}Al_{0.48}As/In_{0.53}Ga_{0.47}As$ heterostructure on the GaAs substrate, and the simulations for RF small-signal characteristics are performed, compared with the measured data, and analyzed for the devices. In addition, the simulations for the DC/RF characteristics of the MHEMTs with different gate-recess structures are performed, compared and analyzed.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.15 no.2
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• pp.273-278
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• 2011

This paper has proposed a dual-band transmitter RF Front-end for IMT-Advanced systems which has been implemented in a 0.13-${\mu}m$ CMOS technology. The proposed dual-band transmitter RF Front-End covers 2300~2700 MHz, 3300~3800 MHz frequency ranges which support 802.11, Mobile WiMAX, and IMT-Advanced system. The proposed dual-band transmitter RF Front-End consumes 45 mA from a 1.2 V supply voltage. The performances of the transmitter RF Front-End are verified through post-layout simulations. The simulation results show a +0 dBm output power at 2 GHz band, and +1.3 dBm output power at 3 GHz band.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.16 no.5
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• pp.1009-1014
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• 2012

This paper has proposed a 2,500 MHz ~ 2,570 MHz 0.13-${\mu}m$ CMOS RF front-end transmitter for LTE-Advanced systems. The proposed RF front-end transmitter is composed of a quadrature up-conversion mixer and a driver amplifier. The measurement results show the maximum output power level is +6 dBm and the suppression ratio for the image sideband and LO leakage are better than -40 dBc respectively. The fabricated chip consumes 36 mA from a 1.2 V supply voltage.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.213-213
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• 2011

DC arc plasmatron is powerful plasma source to apply etching and texturing processing. Even though DC arc plasmatron has many advantages, it is difficult to apply an industry due to the small applied area. To increase an effective processing area, we suggest a DC-RF hybrid plasma system. The DC-RF hybrid plasma system was designed and made. This system consists of a DC arc plasmatron, RF parts, reaction chamber, power feeder, gas control system and vacuum system. To investigate a DC-RF hybrid plasma, we used a Langmuir probe, OES (Optical emission spectroscopy), infrared (IR) light camera. For RF matching, PSIM software was used to simulate a current of an impedance coil. The results of Langmuir probe measurements, we obtain a homogeneous plasma density and electron temperature those are about $1{\times}1010$ #/cm3 and 1~4 eV. The DC-RF hybrid plasma source is applied for plasma etching experimental, and we obtain an etching rate of 10 ${\mu}m$/min. through a 90 mm of reaction chamber diameter.

• Proceedings of the IEEK Conference
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• 2000.11b
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• pp.245-248
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• 2000

In this paper, we present a high-performance SiGe HBT's RF input impedance parameter extraction method. The SiGe HBT has emitter width of 0.5${\mu}{\textrm}{m}$ and length of 6${\mu}{\textrm}{m}$. S-parameter has been measured with the collector current of 1~3㎃ using on-wafer RF measuring system . The pre-calculation method was used in order to overcome the local minimum problem. This method enabled us to extract a RF(1~10㎓) input impedance parameter.

• Journal of the Institute of Electronics and Information Engineers
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• v.53 no.2
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• pp.36-44
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• 2016

In this paper, an Impulse Radio-Ultra Wide band RF Transceiver for WBAN applications is implemented in $0.18{\mu}m$ CMOS technology. The designed RF transceiver support 3-5GHz UWB low band and employs OOK(On-Off Keying) modulation. The receiver employs non-coherent energy detection architecture to reduce complexity and power consumption. For the rejection of the undesired interferers and improvement of the receiver sensitivity, RF active notch filter is integrated. The VCO based transmitter employs the switch mechanism. As adapt the switch mechanism, power consumption and VCO leakage can be reduced. Also, the spectrum mask is always same at each center frequency. The measured sensitivity of the receiver is -84.1 dBm at 3.5 GHz with 1.579 Mbps. The power consumption of the transmitter and receiver are 0.3nJ/bit and 41 mW respectively.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.42 no.3 s.333
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• pp.1-8
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• 2005

In this paper, we analyzed the DC and RF characteristics of $0.1\;{\mu}m$ metamorphic high electron mobility transistor (MHEMT) using the ISE-TCAD simulation tool. we also analyzed the effects or the scaling on vertical and lateral dimensions such as a gate length, source-drain spacing, and channel thickness. We discussed the degradation of extrinsic transconductance $g_{m,max}$ in the MHEMTs adopting the gate length $(L_g)$ of $sub-0.1\;{\mu}m$. We suggested the model describing the effects on the vertical and lateral parameter scaling.