Proceedings of the IEEK Conference (대한전자공학회:학술대회논문집)

The Institute of Electronics and Information Engineers (대한전자공학회)
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1-10GHz, Input Impedance Parameter Extraction Method of SiGe HBT

1-l0GHz 대역에서의 SiGe HBT′s 소신호 입력 임피던스 Parameter 추출 방법

  • Published : 2000.11.01
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Abstract

In this paper, we present a high-performance SiGe HBT's RF input impedance parameter extraction method. The SiGe HBT has emitter width of 0.5${\mu}{\textrm}{m}$ and length of 6${\mu}{\textrm}{m}$. S-parameter has been measured with the collector current of 1~3㎃ using on-wafer RF measuring system . The pre-calculation method was used in order to overcome the local minimum problem. This method enabled us to extract a RF(1~10㎓) input impedance parameter.

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