• 한국정밀공학회:학술대회논문집
• /
• 한국정밀공학회 2009년도 추계학술대회 논문집
• /
• pp.699-700
• /
• 2009

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 1999년도 춘계학술대회 논문집
• /
• pp.442-446
• /
• 1999

Melting behavior and bridge phenomenon of solder paste, which is essential for surface mount technology in packaging, were investigated. solder paste of Sn-37%Pb was printed on Sn-coated Cu-pattern of PCB, and heated over melting point. Melting behavior of the paste was observed using CCD-camera. In order to modelize the melting and agglomeration phenomena of the paste, two solder balls of 0.76mm diameter were used. As experimental results, the paste start to melt from the margin of the printed shape. The hight of the melted paste decreased from 270 $\mu$m to 200 $\mu$m firstly, and finally recovered to 250 $\mu$m. During the melting procedure, pores were evolved from the molten paste. Bridge Phenomenon of the molten Paste depends upon the pitch of the pattern.

• Journal of Welding and Joining
• /
• 제32권3호
• /
• pp.68-73
• /
• 2014

Among through silicon via (TSV) technologies, for replacing Cu filling method, the method of molten solder filling has been proposed to reduce filling cost and filling time. However, because Sn alloy which has a high coefficient of thermal expansion (CTE) than Cu, CTE mismatch between Si and molten solder induced higher thermal stress than Cu filling method. This thermal stress can deteriorate reliability of TSV by forming defects like void, crack and so on. Therefore, we fabricated SiC composite filling material which had a low CTE for reducing thermal stress in TSV. To add SiC nano particles to molten solder, ball-typed SiC clusters, which were formed with Sn powders and SiC nano particles by ball mill process, put into molten Sn and then, nano particle-dispersed SiC composite filling material was produced. In the case of 1 wt.% of SiC particle, the CTE showed a lowest value which was a $14.8ppm/^{\circ}C$ and this value was lower than CTE of Cu. Up to 1 wt.% of SiC particle, Young's modulus increased as wt.% of SiC particle increased. And also, we observed cross-sectioned TSV which was filled with 1 wt.% of SiC particle and we confirmed a possibility of SiC composite material as a TSV filling material.

• 대한금속재료학회지
• /
• 제50권8호
• /
• pp.563-568
• /
• 2012

The wetting property and reflectivity of Sn-3.5Ag solder which was dip coated on a LED lead frame were investigated. The wettability of molten solder on Cu substrate was evaluated by the wetting balance tester, and surface tension was calculated from maximum withdrawal force and withdrawal time. Temperature of the molten solder in a bath was varied in the range of $250-290^{\circ}C$. With increasing temperature, the surface tension decreased a little. The reflectivity of Sn-3.5Ag coated on a substrate became a little lower than the highest current LED lead frame reflectivity.

• 대한용접접합학회:학술대회논문집
• /
• 대한용접접합학회 2006년도 춘계 학술대회 개요집
• /
• pp.30-32
• /
• 2006

The interfacial reaction and reliability of eutectic Sn-Pb and Pb-free eutectic Sn-Ag ball-grid-array (BGA) solders with an immersion Ag-plated Cu substrate were evaluated following isothermal aging at $150^{\circ}C$. During reflowing, the topmost Ag layer was dissolved completely into the molten solder, leaving the Cu layer exposed to the molten solder for both solder systems. A typical scallop-type Cu-Sn intermetallic compound (IMC) layer was formed at both of the solder/Cu interfaces during reflowing. The thickness of the Cu-Sn IMCs for both solders was found to increase linearly with the square root of isothermal aging time. The growth of the $Cu_3Sn$ layer for the Sn-37Pb solder was faster than that for the Sn-3.5Ag solder, In the case of the Sn-37Pb solder, the formation of the Pb-rich layer on the Cu-Sn IMC layer retarded the growth of the $Cu_6Sn_5$ IMC layer, and thereby increased the growth rate of the $Cu_3Sn$ IMC layer. In the ball shear test conducted on the Sn-37Pb/Ag-plated Cu joint after aging for 500h, fracturing occurred at the solder/$Cu_6Sn_5$ interface. The shear failure was significantly related to the interfacial adhesion strength between the Pb-rich and $Cu_6Sn_5$ IMC layers. On the other hand, all fracturing occurred in the bulk solder for the Sn-3.5Ag/Ag-plated Cu joint, which confirmed its desirable joint reliability.

• Journal of Welding and Joining
• /
• 제18권4호
• /
• pp.55-63
• /
• 2000

This paper presents a study of the solder bumping process. The theoretical model, based on the variational principle instead of solving the Navier-Stokes equation with moving boundaries, was developed to considered the energy dissipation in semi-solid phase and the approximate solidification time of the molten metal droplet. The simulation results revealed that the developed model could reasonably describe the collision behavior of molten metal with solid surface. Simulations were made with variation of initial droplet temperature, substrate metal and initial substrate temerature.

• 한국정밀공학회:학술대회논문집
• /
• 한국정밀공학회 2010년도 춘계학술대회 논문집
• /
• pp.661-662
• /
• 2010

• Journal of Welding and Joining
• /
• 제25권2호
• /
• pp.76-81
• /
• 2007

Solder bumps have been used to interconnect the chip and substrate, and the size of the solder bump decreases below $100{\mu}m$ to accommodate higher packaging density. In order to fabricate solder bumps, a mold to chip transfer process is suggested in this work. Since the thin stainless steel mold is not wet by the solder, the molten solder is forced to fill the mold cavities with ultrasonic vibration. The solders within the mold cavities are transferred to the Cu pads on the polyimide film through reflow soldering.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
• /
• pp.332-336
• /
• 2001

In this study, the reaction at UBM(Under Bump Metallurgy) and solder interface was investigated. The UBM employed in conventional optical packages, Au/Pt/Ti layer, were found to dissolve into molten Au-Sn eutectic solder during reflow soldering. Therefore, the reaction with different diffusion barrier layer such as Fe, Co, Ni were investigated to replace the conventional Pt layer. The reaction behavior was investigated by reflowing the solder on the pad of the metals defined by Cr layer for 1, 2, 3, 4, and 5 minutes at $330^{\circ}C$. Among the metals, Co was found to be most suitable for the diffusion barrier layer as the wettability with the solder was reasonable and the reaction rate of intermetallic formation at the interface is relatively slow.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2001년도 추계학술대회 논문집
• /
• pp.332-336
• /
• 2001

In this study, the reaction at UBM(Under Bump Metallurgy) and solder interface was investigated. The UBM employed in conventional optical packages, Au/Pt/Ti layer, were found to dissolve into molten Au-Sn eutectic solder during reflow soldering. Therefore, the reaction with different diffusion barrier layer such as Fe, Co, Ni were investigated to replace the conventional R layer. The reaction behavior was investigated by reflowing the solder on the pad of the metals defined by Cr layer for 1, 2, 3, 4, and 5 minutes at 330$^{\circ}C$. Among the metals, Co was found to be most suitable for the diffusion barrier layer as the wettability with the solder was reasonable and the reaction rate of intermetallic formation at the interface is relatively slow.