• Title/Summary/Keyword: Modulator

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Investigation of Possible Horizontal Gene Transfer from the Leaf Tissue of Transgenic Potato to Soil Bacteria

  • KIM YOUNG TAE;KIM SUNG EUN;PARK KI DUK;KANG TAE HOON;LEE YUN MI;LEE SANG HAN;MOON JAE SUN;KIM SUNG UK
    • Journal of Microbiology and Biotechnology
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    • v.15 no.5
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    • pp.1130-1134
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    • 2005
  • To monitor the possibility of horizontal gene transfer between transgenic potato and bacteria in the environment, the gene flow from glufosinate-tolerant potato to bacteria in soils was investigated. The soil samples treated with the leaf tissue of either glufosinate-tolerant or glufosinate-sensitive potato were subjected to PCR and Southern hybridization to determine possible occurrence of glufosinate-resistant soil bacteria and to detect the bar (phosphinothricin acetyltransferase) gene, conferring tolerance to glufosinate. The bar gene was not detected from genomic DNAs extracted at different time intervals from the soil samples, which had been treated with the leaf tissue of either transgenic or non-transgenic potato for 2 to 8 weeks. In addition, the level of glufosinate-resistant bacteria isolated from the soil samples treated with the leaf tissue of transgenic potato was similar to that of the samples treated with non-transgenic potato after 4 months of incubation at $25^{\circ}C$. The bar gene was not detected in the genomic DNAs extracted from colonies growing on the plate containing glufosinate, indicating that the bacteria could acquire the resistant phenotype to glufosinate by another mechanism without the uptake of the bar gene from glufosinate-tolerant potato.

Investigation of Possible Gene Transfer to Soil Microorganisms for Environmental Risk Assessment of Genetically Modified Organisms

  • Kim, Young-Tae;Park, Byoung-Keun;Hwang, Eui-Il;Yim, Nam-Hui;Kim, Na-Rae;Kang, Tae-Hoon;Lee, Sang-Han;Kim, Sung-Uk
    • Journal of Microbiology and Biotechnology
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    • v.14 no.3
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    • pp.498-502
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    • 2004
  • The current study was conducted to monitor the possibility of the gene transfer among soil bacteria, including the effect of drift due to rain and surface water, in relation to the release of genetically modified organisms into the environment. Four types of bacteria, each with a distinct antibiotic marker, kanamycin-resistant P. fluorescens, rifampicin-resistant P. putida, chloramphenicol-resistant B. subtilis, and spectinomycin-resistant B. subtilis, were plated using a small-scale soil-core device designed to track drifting microorganisms. After three weeks of culture in the device, no Pseudomonas colonies resistant to both kanamycin and rifampicin were found. Likewise, no Bacillus colonies resistant to both chloramphenicol and spectinomycin were found. The gene transfer from glyphosate-tolerant soybeans to soil bacteria, including Rhizobium spp. as a symbiotic bacteria, was examined by hybridization using the DNA extracted from soil taken from pots, in which glyphosate-tolerant soybeans had been growing for 6 months. The results showed that 35S, T-nos, and EPSPS were observed in the positive control, but not in the DNA extracted from the soilborne microorganisms. In addition, no transgenes, such as the 35S promoter, T-nos, and EPSPS introduced into the GMO soybeans were detected in soilborne bacteria, Rhizobium leguminosarum, thereby strongly rejecting the possibility of gene transfer from the GMO soybeans to the bacterium.

A Low-Power CMOS Continuous-Time Sigma-Delta Modulator for UMTS Receivers (UMTS용 수신기를 위한 저 전력 CMOS 연속-시간 시그마-델타 모듈레이터)

  • Lim, Jin-Up;Choi, Joong-Ho
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.44 no.8
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    • pp.65-73
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    • 2007
  • This paper presents a low power CMOS continuous-time $\Sigma\Delta$ (sigma-delta) modulator for UMTS receivers. The loop filter of the continuous-time $\Sigma\Delta$ modulator consists of an active-RC filter which performs high linearity characteristics and has a simple tuning circuit for low power operating system The architecture of this modulator is the $3^{rd}-order$ 4-bit single loop configuration with a 24 of OSR (Oversampling Ratio) to increase the power efficiency. The modulator includes a half delay feedback path to compensate the excess loop delay. The experimental results of the modulator are 71dB, 65dB and 74dB of the peak SNR, peak SMR and dynamic range, respectively. The continuous-time $\Sigma\Delta$ modulator is fabricated in a 0.18-um 1P4M CMOS standard process and dissipates 15mW for a single supply voltage of 1.8V.

Design of a CMOS Single Bit 3rd Order Delta-Sigma Modulator with Switched Operational Amplifier (스위치드 연산증폭기를 이용한 CMOS 단일비트 3차 델타시그마 변조기 설계)

  • Lee, Han-Ul;Dai, Shi;Yoo, Tai-Kyung;Lee, Keon;Yoon, Kwang-Sub;Lee, Sang-Min
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.37 no.8A
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    • pp.712-719
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    • 2012
  • This paper presents Single-bit Third order Delta-Sigma Modulator, which can be applied to the Low speed High resolution ADC in Audio signal Process System. Whereas the Operational Amplifier in modulator consumed static power dissipation in operating, this modulator used Switching on/off techniques, which makes the Power dissipation of the modulator reduced. Also proposed modulator minimizes frequency characteristic variation by optimizing switch position. And this modulator chooses Single-bit type to guarantee stability. The designed ADC went through 0.35um CMOS n-well 1-poly 4-metal process to be a final product, and the final product has shown 17.1mW of power dissipation with 3.3V of Supply Voltage, 6.4MHz of conversion rate. And 84.3dB SNDR and 13.5bit ENOB with 20KHz of input frequency.

A Reconfigurable 4th Order ΣΔ Modulator with a KT/C Noise Reduction Circuit

  • Yang, Su-Hun;Seong, Jae-Hyeon;Yoon, Kwang-Sub
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.17 no.2
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    • pp.294-301
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    • 2017
  • This paper presents a low power ${\Sigma}{\Delta}$ modulator for an implantable chip to acquire a bio-signal such as EEG, DBS, and EMG. In order to reduce a power consumption of the proposed fourth order modulator, two op-amps utilized for the first two integrators are reconfigured to drive the second two integrators. The KT/C noise reduction circuit in the first two integrators is employed to enhance SNR of the modulator. The proposed circuit was fabricated in a 0.18 um CMOS n-well 1 poly 6 metal process with the active chip core area of $900um{\times}800um$ and the power consumption of 830 uW. Measurement results were demonstrated to be SNDR of 76 dB, DR of 77 dB, ENOB of 12.3 bit at the input frequency of 250 Hz and the clock frequency of 256 kHz. FOM1 and FOM2 were measured to be 41 pJ/step and 142.4 dB, respectively.

A Clipping-free Multi-bit $\Sigma\Delta$ Modulator with Digital-controlled Analog Integrators (디지털 제어 적분형의 차단 현상이 없는 A/D 다중 비트 $\Sigma\Delta$ 변조기)

  • 이동연;김원찬
    • Journal of the Korean Institute of Telematics and Electronics C
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    • v.34C no.4
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    • pp.26-35
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    • 1997
  • This paper proposes a multi-bit $\Sigma\Delta$ modulator arcitecture which eliminates signal clipping problem. To avoid signal clipping, the output values of intgrators are monitored and modified by a reference value. This oepration is recorded as a digital code to restore actual signal value. Due to the digital code, the substraction of feedback value from the multi-bit quantizer can be calculated by a digital adder and this simplifies dAC operation making the accurate DAC of conventional multi-bit $\Sigma\Delta$ modulator scheme unnecessary. These features make N-th modulator can be implemented by sharing an integrator among N stages to decrease the required chip area. As an experimental example, a 4th order .sum..DELTA. modulator with oversampling ratio of 64 was simulated to show over 130 DB SNR at rail-to-rail input sinusoidal signal.

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A 9 mW Highly-Digitized 802.15.4 Receiver Using Bandpass ∑Δ ADC and IF Level Detection

  • Kwon, Yong-Il;Park, Ta-Joon;Lee, Hai-Young
    • Journal of electromagnetic engineering and science
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    • v.8 no.2
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    • pp.76-83
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    • 2008
  • A low power(9 mW) highly-digitized 2.4 GHz receiver for sensor network applications(IEEE 802.15.4 LR-WPAN) is realized by a $0.18{\mu}m$ CMOS process. We adopted a novel receiver architecture adding an intermediate frequency (IF) level detection scheme to a low-power complex fifth-order continuous-time(CT) bandpass L:tl modulator in order to digitalize the receiver. By the continuous-time bandpass architecture, the proposed $\Sigma\Delta$ modulator requires no additional anti-aliasing filter in front of the modulator. Using the IF detector, the achieved dynamic range(DR) of the over-all system is 95 dB at a sampling rate of 64 MHz. This modulator has a bandwidth of 2 MHz centered at 2 MHz. The power consumption of this receiver is 9.0 mW with a 1.8 V power supply.

Study on the Design of Mach-Zehnder Type GaAs Waveguide Electro-Optic Modulator (Mach-Zehnder 형 GaAs 광도파로 변조기의 설계 연구)

  • 이종진;김현배;박정호;박진우
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.17 no.5
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    • pp.442-451
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    • 1992
  • Mach-Zehnder type GaAs elcetro-optic waveguide modulator has been designed in this paper.The modulator. Considered is based on the Mach-Zehnder interferometer configuration, consisting of two Y branch couping rib type waveguides formed in two epitaxial layers on GaAs substrate. The mode theory on waveguides and electo-optic effect of GaAs were utilized to determine the design parameters for the modulator proposed. Effective index method was applied to design the of waveguide supporting a single mode were calculated to achieve the optimized operation of the modulator. Considering interrelationships between many parameters.

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Electrical Properties of Traveling-wave Coplanar Waveguide Transmission Line with a Abruptly broken Input-Output-taper for $LiNbO_3$Optical Modulator Electrode (급격히 꺾인 Taper를 갖는 Traveling-wave Coplanar Waveguide형 $LiNbO_34$전기광학변조기 전송선로의 전기적 특성)

  • 정운조;김성구
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.13 no.12
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    • pp.1051-1057
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    • 2000
  • A traveling-wave CPW(coplanar waveguide) electrode with abruptly broken input/output-taper for LiNbO$_3$optical modulator was designed and fabricated. The electrical characteristics of traveling-wave electrode on z-cut LiNbO$_3$crystal with SiO$_2$buffer layers were measured by network analyzer. To confirm the possibility of the electro-optic modulator electrode, detailed calculations of the impedance, microwave effective index and attenuation constants are presented as a function of the microwave electrode thickness, but the buffer layer thickness is fixed as 1${\mu}{\textrm}{m}$. These characteristics are discussed from the viewpoint of the device optimization and are expected to be design guides for the LiNbO$_3$modulator’s electrodes.

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