• Korean Journal of Social Welfare
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• v.59 no.1
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• pp.223-249
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• 2007

This study is intended to investigate if the standard of vocational rehabilitation service could be solely determined by medical standard for disability definement and to find out what alternatives are available to resolve practical problems for those who are not identified as the severely disabled by the disability definement but do experience severe handicaps at work. Through the literature review, the researcher argued that the concept of 'functional limitation' would be a criteria, and thereby applied Modified Barthel Index to measure the degree of functional limitation. In view of researching the relationship among physical impairment, functional limitation, and job status based on 381 cerebral palsied, variables such as the type of cerebral palsy and the part of paralysis, have neither direct nor indirect influence to the job status; however, the pain and the mobility have indirect effects, and the ability of self-management has direct effect on the job status. The researcher concluded that future research about disabilities needs to provide a serious thought on what it is to be defined as 'disabilities', as well as to focus on further research conceptualizing the degree of physical 'functional limitation'.

• Molecules and Cells
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• v.39 no.6
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• pp.477-483
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• 2016

Heat shock factors (Hsfs) are central regulators of abiotic stress responses, especially heat stress responses, in plants. In the current study, we characterized the activity of the Hsf gene HsfA3 in Arabidopsis under oxidative stress conditions. HsfA3 transcription in seedlings was induced by reactive oxygen species (ROS), exogenous hydrogen peroxide ($H_2O_2$), and an endogenous $H_2O_2$ propagator, 2,5-dibromo-3-methyl-6-isopropyl-p-benzoquinone (DBMIB). HsfA3-overexpressing transgenic plants exhibited increased oxidative stress tolerance compared to untransformed wild-type plants (WT), as revealed by changes in fresh weight, chlorophyll fluorescence, and ion leakage under light conditions. The expression of several genes encoding galactinol synthase (GolS), a key enzyme in the biosynthesis of raffinose family oligosaccharides (RFOs), which function as antioxidants in plant cells, was induced in HsfA3 overexpressors. In addition, galactinol levels were higher in HsfA3 overexpressors than in WT under unstressed conditions. In transient transactivation assays using Arabidopsis leaf protoplasts, HsfA3 activated the transcription of a reporter gene driven by the GolS1 or GolS2 promoter. Electrophoretic mobility shift assays showed that GolS1 and GolS2 are directly regulated by HsfA3. Taken together, these findings provide evidence that GolS1 and GolS2 are directly regulated by HsfA3 and that GolS enzymes play an important role in improving oxidative stress tolerance by increasing galactinol biosynthesis in Arabidopsis.

• Journal of the Korean Electrochemical Society
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• v.8 no.3
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• pp.130-134
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• 2005

To the best knowledge, the formation and characterization of InSb nanowires have not been reported yet in spite of its good characteristics as a III-V compound semiconductor. The nanowire arrays were potentiostatically electrodeposited in a mixing solution of indium chloride, antimony chloride, citric acid, and potassium citrate according to our previous work on the electrodeposition of the stoichiometric InSb films. The electrical properties of nanowire arrays were measured by semiconductor parameter analyzer, and the microstructural analysis of the nanowires was conducted by employing XRD. Our experimental results indicate that the InSb nanowires have a highly preferred orientation of (220) direction and also exhibit electrical characteristics of n-type semiconductors which we, however, similar to semi-metals mainly due to their narrow band-gap and high electron mobility.

• Proceedings of the Korea Contents Association Conference
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• 2008.05a
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• pp.38-42
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• 2008

In the 2000s, the PC package game market has withered, but the internet based on-line game, the wireless internet based mobile game and high-powered console game market have been main stream. Among those markets, mobile game market has rapidly increased because it has 'mobility' that overcomes the limitation of time and area. But, unlike other platforms, mobile game user have to pay the higher price for download mobile game contents through the wireless internet and mobile game developer have to overcome the limitation of storage memory capacity.of mobile phone. Chiefly, the image data consume the storage capacity of mobile game contents, this paper present a technology to optimize image data for mobile game contents through analyzing type of compression method and image formats.

• Korean Journal of Materials Research
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• v.27 no.12
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• pp.664-671
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• 2017

A composite material was prepared for the bipolar plates of phosphoric acid fuel cells(PAFC) by hot pressing a flake type natural graphite powder as a filler material and a fluorine resin as a binder. Average particle sizes of the powders were 610.3, 401.6, 99.5, and $37.7{\mu}m$. The density of the composite increased from 2.25 to $2.72g/cm^3$ as the graphite size increased from 37.7 to $610.3{\mu}m$. The anisotropy ratio of the composite increased from 1.8 to 490.9 as the graphite size increased. The flexural strength of the composite decreased from 15.60 to 8.94MPa as the graphite size increased. The porosity and the resistivity of the composite showed the same tendencies, and decreased as the graphite size increased. The lowest resistivity and porosity of the composite were $1.99{\times}10^{-3}{\Omega}cm$ and 2.02 %, respectively, when the graphite size was $401.6{\mu}m$. The flexural strength of the composite was 10.3MPa when the graphite size was $401.6{\mu}m$. The lowest resistance to electron mobility was well correlated with the composite with lowest porosity. It was possible the flaky large graphite particles survive after the hot pressing process.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.241.2-241.2
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• 2013

최근, 비정질 산화물 반도체 thin film transistor (TFT)는 수소화된 비정질 실리콘 TFT와 비교하여 높은 이동도와 큰 on/off 전류비, 낮은 구동 전압을 가짐으로써 빠른 속도가 요구되는 차세대 투명 디스플레이의 TFT로 많은 연구가 진행되고 있다. 한편, 기존의 MOSFET 제작 시 우수한 박막을 얻기 위해서는 $500^{\circ}C$ 이상의 높은 열처리 온도가 필수적이며 이는 유리 기판과 플라스틱 기판에 적용하는 것이 적합하지 않고 높은 온도에서 수 시간 동안 열처리를 수행해야 하므로 공정 시간 및 비용이 증가하게 된다는 단점이 있다. 따라서, 본 연구에서는 RF sputter를 이용하여 증착된 비정질 InGaZnO pesudo MOSFET 소자를 제작하였으며, thermal 열처리와 microwave 열처리 방식에 따른 전기적 특성을 비교 및 분석하고 각 열처리 방식의 열처리 온도 및 조건을 최적화하였다. P-type bulk silicon 위에 산화막이 100 nm 형성된 기판에 RF 스퍼터링을 이용하여 InGaZnO 분말을 각각 1:1:2mol% 조성비로 혼합하여 소결한 타겟을 사용하여 70 nm 두께의 InGaZnO를 증착하였다. 연속해서 Photolithography 공정과 BOE(30:1) 습식 식각 과정을 이용해 활성화 영역을 형성하여 소자를 제작하였다. 제작 된 소자는 pseudo MOSFET 구조이며, 프로브 탐침을 증착 된 채널층 표면에 직접 접촉시켜 소스와 드레인 역할을 대체하여 동작시킬 수 있어 전기적 특성을 간단하고 간략화된 공정과정으로 분석할 수 있는 장점이 있다. 열처리 조건으로는 thermal 열처리의 경우, furnace를 이용하여 각각 $300^{\circ}C$, $400^{\circ}C$, $500^{\circ}C$, $600^{\circ}C$에서 30분 동안 N2 가스 분위기에서 열처리를 실시하였고, microwave 열처리는 microwave를 이용하여 각각 400 W, 600 W, 800 W, 1000 W로 20분 동안 실시하였다. 그 결과, furnace를 이용하여 열처리한 소자와 비교하여 microwave 를 통해 열처리한 소자에서 subthreshold swing (SS), threshold voltage (Vth), mobility 등이 개선되는 것을 확인하였다. 따라서, microwave 열처리 공정은 향후 저온 공정을 요구하는 MOSFET 제작 시의 훌륭한 대안으로 사용 될 것으로 기대된다.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.35 no.2
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• pp.135-141
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• 2011

A smart home provides services that its inhabitant needs or wants, by integrating and simultaneously controlling various devices and sensors. In this study, we focused on a smart-home system for people with disabilities and for elderly people. We introduced a new type of system for real-time analysis of body posture of the inhabitants of a smart home. The system includes the concept that offers remote healthcare or medical services by using a 3D tilt sensor for recognizing the static and dynamic postures of inhabitants in real time. It consists of a smart-home server and a 3D tilt sensor, and it uses wireless technology to communicate with the inhabitants and thus enhance their mobility. The smart-home server includes the inference engine that differentiates the dynamic postures from the static ones. Finally, we also demonstrate the usefulness of the proposed system by applying it to a real environment.

• Journal of Korean Society of Occupational and Environmental Hygiene
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• v.28 no.3
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• pp.273-282
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• 2018

Objectives: Dustiness of nanomaterials is considered as exposure index of essential material. Research on dustiness of nanomaterial is needed to control exposure in workplaces. Method: Dustiness measurement using vortex shaker were installed in the laboratory. Nanomaterials, 1 g, was put in the glass test tube and shaked using vortex shaker. Aerosol dispersed was measured using scanning mobility particle sizer(SMPS) and optical particle counter(OPC). Mass concentration using PVC filter and cassette was measured and TEM grid sampling was conducted. Total particle concentration and size distribution were calculated. Image and chemical composition of particles in the air were observed using transmission electron microscopy and energy dispersive X-ray spectrometer. Eleven different test nanomaterials were used in the study. Results: Rank of mass concentration and particle number concentration were coincided in most cases. Rank of nanomateirals with low concentration were not coincided. Two types of fumed silica had the highest mass concentration and particle number concentration. Indium tin oxide, a mixture of indium oxide and tin oxide, had high mass concentration and particle number concentration. Indium oxide had very low mass concentration and particle number concentration. Agglomeration of nanoparticles in the air were observed in TEM analysis and size distribution. In this study, mass concentration and particle number concentration were coincided and two index can be used together. The range of dustiness in particle number concentration were too wide to measure in one method. Conclusion: Particle number concentration ranged from low concentration to high concentration depend on type of nanomaterial, and varied by preparation and amount of nanomaterial used. Further study is needed to measure dustiness of all nanomaterial as one reference method.

• Molecules and Cells
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• v.21 no.1
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• pp.63-75
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• 2006

The 5′-region of Potato virus X (PVX) RNA, which contains an AC-rich, single-stranded region and stem-loop structure 1 (SL1), affects RNA replication and assembly. Using Systemic Evolution of Ligands by EXponential enrichment (SELEX) and the electrophoretic mobility shift assay, we demonstrate that SL1 interacts specifically with tobacco protoplast protein extracts (S100). The 36 nucleotides that correspond to the top region of SL1, which comprises stem C, loop C, stem D, and the tetra loop (TL), were randomized and bound to the S100. Remarkably, the wild-type (wt) sequence was selected in the second round, and the number of wt sequences increased as selection proceeded. All of the selected clones from the fifth round contained the wt sequence. Secondary structure predictions (mFOLD) of the recovered sequences revealed relatively stable stem-loop structures that resembled SL1, although the nucleotide sequences therein were different. Moreover, many of the clones selected in the fourth round conserved the TL and C-C mismatch, which suggests the importance of these elements in host protein binding. The SELEX clone that closely resembled the wt SL1 structure with the TL and C-C mismatch was able to replicate and cause systemic symptoms in plants, while most of the other winners replicated poorly only on inoculated leaves. The RNA replication level on protoplasts was also similarly affected. Taken together, these results indicate that the SL1 of PVX interacts with host protein(s) that play important roles related to virus replication.

• Journal of Convergence for Information Technology
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• v.9 no.3
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• pp.75-81
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• 2019

In this work, we investigated a low temperature polycrystalline silicon (LTPS) thin film transistors fabrication process on polymer layers. Dehydrogenation and activation processes were performed by a furnace annealing at a temperature of $430^{\circ}C$ for 2 hr. The crystallization of amorphous silicon films was formed by excimer laser annealing (ELA) method. The p-type device performance, fabricated by polycrystalline silicon (poly-Si) films, shows a very good performance with field effect mobility of $77cm^2/V{\cdot}s$ and on/off ratio current ratio > $10^7$. We believe that the poly-Si formed by a LTPS process may be well suited for fabrication of poly-Si TFTs for bendable panel displays such as AMOLED that require circuit integration.