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http://dx.doi.org/10.22156/CS4SMB.2019.9.3.075

Characteristics of Excimer Laser-Annealed Polycrystalline Silicon on Polymer layers  

Kim, Kyoung-Bo (Department of Metallurgical and Materials Engineering, Inha Technical College)
Lee, Jongpil (Department of Electrical and Electronic Engineering, Jungwon University)
Kim, Moojin (Department of Electrical and Electronic Engineering, Jungwon University)
Min, Youngsil (Department of Pharmaceutical Science, Jungwon University)
Publication Information
Journal of Convergence for Information Technology / v.9, no.3, 2019 , pp. 75-81 More about this Journal
Abstract
In this work, we investigated a low temperature polycrystalline silicon (LTPS) thin film transistors fabrication process on polymer layers. Dehydrogenation and activation processes were performed by a furnace annealing at a temperature of $430^{\circ}C$ for 2 hr. The crystallization of amorphous silicon films was formed by excimer laser annealing (ELA) method. The p-type device performance, fabricated by polycrystalline silicon (poly-Si) films, shows a very good performance with field effect mobility of $77cm^2/V{\cdot}s$ and on/off ratio current ratio > $10^7$. We believe that the poly-Si formed by a LTPS process may be well suited for fabrication of poly-Si TFTs for bendable panel displays such as AMOLED that require circuit integration.
Keywords
Polymer; Excimer Laser; Polycrystalline Silicon; Thin Film Transistor; AMOLED Display;
Citations & Related Records
Times Cited By KSCI : 2  (Citation Analysis)
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