• 한국재료학회지
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• 제17권9호
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• pp.484-488
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• 2007

Mo(Ti) alloy and pure Cu thin films were subsequently deposited on $SiO_2-coated$ Si wafers, resulting in $Cu/Mo(Ti)/SiO_2$ structures. The multi-structures have been annealed in vacuum at $100-600^{\circ}C$ for 30 min to investigate the outdiffusion of Ti to Cu surface. Annealing at high temperature allowed the outdiffusion of Ti from the Mo(Ti) alloy underlayer to the Cu surface and then forming $TiO_2$ on the surface, which protected the Cu surface against $SiH_4＋NH_3$ plasma during the deposition of $Si_3N_4$ on Cu. The formation of $TiO_2$ layer on the Cu surface was a strong function of annealing temperature and Ti concentration in Mo(Ti) underlayer. Significant outdiffusion of Ti started to occur at $400^{\circ}C$ when the Ti concentration in Mo(Ti) alloy was higher than 60 at.%. This resulted in the formation of $TiO_2/Cu/Mo(Ti)\;alloy/SiO_2$ structures. We have employed the as-deposited Cu/Mo(Ti) alloy and the $500^{\circ}C-annealed$ Cu/Mo(Ti) alloy as gate electrodes to fabricate TFT devices, and then measured the electrical characteristics. The $500^{\circ}C$ annealed Cu/Mo($Ti{\geq}60at.%$) gate electrode TFT showed the excellent electrical characteristics ($mobility\;=\;0.488\;-\;0.505\;cm^2/Vs$, on/off $ratio\;=\;2{\times}10^5-1.85{\times}10^6$, subthreshold = 0.733.1.13 V/decade), indicating that the use of Ti-rich($Ti{\geq}60at.%$) alloy underlayer effectively passivated the Cu surface as a result of the formation of $TiO_2$ on the Cu grain boundaries.

• 전기학회논문지
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• 제66권11호
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• pp.1600-1604
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• 2017

Mo-Cu alloys have been widely used for heat sink materials, vacuum technology, automobile and many other applications due to their excellent physical and electronic properties. Especially, Mo-Cu composites with 5~20 wt% copper are widely used for the heavy duty service contacts due to their excellent properties like low coefficient of thermal expansion, wear resistance, high temperature strength and prominent electrical and thermal conductivity. In most of the applications, high dense Mo-Cu materials with homogeneous microstructure are required for high performance, which has led in turn to attempts to prepare ultra-fine and well-dispersed Mo-Cu powders in different ways, such as spray drying and reduction process, electroless plating technique, mechanical alloying process and gelatification-reduction process. However, most of these methods were accomplished at high temperature (typically degree), resulting in undesirable growth of large Cu phases; furthermore, these methods usually require complicated experimental facilities and procedure. In this study, Mo-Cu alloying were prepared by planetary ball milling (PBM) and spark plasma sintering (SPS) and the effect of Cu with contents of 5~20 wt% on the microstructure and properties of Mo-Cu alloy has been investigated.

• 한국표면공학회지
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• 제53권6호
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• pp.343-350
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• 2020

The degradation of mechanical properties of nitride coatings to steel substrates is one of the main challenges for industrial applications. In this study, plasma nitriding treatment was used in order to increase the mechanical properties of Mo-Cu-N coating to the H13 tool steel. The nanostructured Mo-Cu-N coating was deposited using pulsed DC magnetron sputtering method with a single alloy Mo-Cu target. Mechanical properties of MoN-Cu coated samples after nitriding were found to be relatively better than non-nitrided MoN-Cu coating.

• 한국자기학회지
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• 제12권1호
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• pp.30-33
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• 2002

초미세결정렵 Nd-Fe-B-Mo-Cu합금에서 Co 치환이 미세조직과 자기특성에 미치는 영향을 조사 하였다. 급속응고법으로 제조된 비정질 Nd-(Fe, Co)-B-Mo-Cu합금은 결정화에 의하여 $\alpha$-Fe기 초미세결정립 Nd-(Fe, Co)-B-Mo-Cu합금이 제조되었다. Co로의 Fe치환은 결정립 미세화에 기여하며, 이로 인하여 경자기특성이 개선되었다. 최적열처리된 초미세결정립 N $d_4$(F $e_{0.85}$ $Co_{0.15}$)$_{82}$ $B_{10}$M $o_3$Cul합금의 잔류자화, Curie온도는 Co가 치환되지 않은 합금에 비하여 개선된 우수한 특성을 나타내었다. 64$0^{\circ}C$, 10분 열처리된 초미세결정립 N $d_4$(F $e_{0.85}$ $Co_{0.15}$)$_{82}$ $B_{10}$M $o_3$Cu 합금의 평균결정립 크기는 약 15 nm이며, 이때 보자력, 잔류자화 및 최대에너지적은 각각 239kA/m, 1.4 T 및 103.5 kJ/ $m^3$이었다.

• 한국분말재료학회지
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• 제10권3호
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• pp.164-167
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• 2003

The mechanical alloying effect has been studied on the three Cu-based alloy systems with a positive heat of mixing. The extended bcc solid solution has been formed in the Cu-V system and an amorphous phase in the Cu-Ta system. However, it is round that a mixture of nanocrystalline Cu and Mo Is formed in the Cu-Mo system. The neutron diffraction has been employed at a main tool to characterize the detailed amorphization process. The formation of an amorphous phase in Cu-Ta system can be understood by assuming that the smaller Cu atoms preferentially enter into the bcc Ta lattice during ball milling.

• 대한치과기공학회지
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• 제36권3호
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• pp.141-147
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• 2014

Purpose: Dental casting #Gr I (Co-25Cr-5Mo-3Sn-1Mn-1Si), #Gr II (Co-25Cr-5Mo-5Cu-1Mn -1Si) and #Gr III (Co-25Cr-5Mo-3Sn-5Cu-1Mn-1Si) master alloys of granule type were manufactured the same as manufacturing processes for dental casting Ni-Cr and Co-Cr-Mo based alloys of ingot type. These alloys were analyzed melting processes with heating time of high frequency induction centrifugal casting machine using infrared thermal image analyzer. Methods: These alloys were manufactured such as; alloy design, the first master alloy manufatured using vacuum arc casting machine, melting metal setting in crucible, melting in VIM, pouring in the mold of bar type, cutting the gate and runner bar and polishing. These alloys were put about 30g/charge in the ceramic crucible of high frequency induction centrifugal casting machine and heat, Infrared thermal image analyzer indicated alloys in the crucible were set and operated. Results: The melting temperatures of these alloys measuring infrared thermal image analyzer were decreased in comparison with remanium$^{(R)}$ GM 800+, vera PDI$^{TM}$, Biosil$^{(R)}$ f, WISIL$^{(R)}$ M type V, Ticonium 2000 alloys of ingot type and vera PDS$^{TM}$(Aabadent, USA), Regalloy alloys of shot type. Conclusion: Co-Cr-Mo based alloy in addition to Sn(#Gr I alloy) were decreased the melting temperature with heating time of high frequency induction centrifugal casting machine using infrared thermal image analyzer.

• 한국자기학회지
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• 제7권1호
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• pp.44-48
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• 1997

약 30 nm의 미세결정립으로 구성된 ( .alpha. -Fe)-(Nd$_{2}$Fe$_{14}$B$_{1}$)형 저 Nd함유 Nd-Fe-B계 합금이 급속응고법으로 제조된 비정질상으로 부터 결정화하여 제조되었다. Nd$_{4}$Fe$_{82}$B$_{10}$Mo$_{3}$Cu$_{1}$ 조성에 Ga의 첨가는 각형성 개선효과와 함께 잔류자화를 1.29 T까지 증가시킨다. Nd의 함유량을 증가시킨 초미세결정립 Nd$_{5}$Fe$_{81}$B$_{9}$Mo$_{3}$Cu$_{1}$Ga$_{1}$ 합금의 Nd$_{2}$Fe$_{81}$B$_{9}$Mo$_{3}$Cu$_{1}$Ga$_{1}$ 합금의 잔류자화, 보자력 및 최대자기에너지적은 각각 1.24 T, 257.4 kA/m(3.23 kOe), and 100.3 kJ/m$^{3}$(12.6 MGOe)이다.다.

• 한국분말재료학회지
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• 제26권2호
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• pp.112-118
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• 2019

Infiltration is a popular technique used to produce valve seat rings and guides to create dense parts. In order to develop valve seat material with a good thermal conductivity and thermal expansion coefficient, Cu-infiltrated properties of sintered Fe-Co-M(M=Mo,Cr) alloy systems are studied. It is shown that the copper network that forms inside the steel alloy skeleton during infiltration enhances the thermal conductivity and thermal expansion coefficient of the steel alloy composite. The hard phase of the CoMoCr and the network precipitated FeCrC phase are distributed homogeneously as the infiltrated Cu phase increases. The increase in hardness of the alloy composite due to the increase of the Co, Ni, Cr, and Cu contents in Fe matrix by the infiltrated Cu amount increases. Using infiltration, the thermal conductivity and thermal expansion coefficient were increased to 29.5 W/mK and $15.9um/m^{\circ}C$, respectively, for tempered alloy composite.

• 한국자기학회:학술대회 개요집
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• 한국자기학회 1991년도 춘계연구발표회 논문개요집
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• pp.53-54
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• 1991

• 한국재료학회지
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• 제16권4호
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• pp.257-263
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• 2006

We have investigated the effect of silver added to Cu films on the microstructure evolution, resistivity, surface morphology, stress relaxation temperature, and adhesion properties of Cu(Ag) alloy thin films deposited on Mo glue layer upon annealing. In addition, pure Cu films deposited on Mo has been annealed and compared. The results show that the silver in Cu(Ag) thin films control the grain growth through the coarsening of its precipitates upon annealing at $300^{\circ}C{\sim}600^{\circ}C$ and the grain growth of Cu reveals the activation energy of 0.22 eV, approximately one third of activation energy for diffusion of Ag dopant along the grain boundaries in Cu matrix (0.75 eV). This indicates that the grain growth can be controlled by Ag diffusion along the grain boundaries. In addition, the grain growth can be a major contributor to the decreased resistivity of Cu(Ag) alloy thin films at the temperature of $300^{\circ}C{\sim}500^{\circ}C$, and decreases the resistivity of Cu(Ag) thin films to $1.96{\mu}{\Omega}-cm$ after annealing at $600^{\circ}C$. Furthermore, the addition of Ag increases the stress relaxation temperature of Cu(Ag) thin films, and thus leading to the enhanced resistance to the void formation, which starts at $300^{\circ}C$ in the pure Cu thin films. Moreover, Cu(Ag) thin films shows the increased adhesion properties, possibly resulting from the Ag segregating to the interface. Consequently, the Cu(Ag) thin films can be used as a metallization of advanced TFT-LCDs.