• The Journal of Korean Institute of Communications and Information Sciences
• /
• v.27 no.4B
• /
• pp.365-371
• /
• 2002

In this paper, the fabricated power PHEMT devices for millimeter-wave that is below a gate-length of 0.2 $\mu\textrm{m}$ using electronic beam lithography technologies, and the DC and frequency characteristics and an output power characteristics were Measured at the various bias conditions. The unit process that is used in PHEMT's manufacture used that low-resistance ohmic contact, air-bridge and back-side lapping process technologies, and so on. The fabricated power PHEMT have an S521 gain of 4 dB and a maximum transconductance(gm) of 317 mS/mm, an unilateral current gain(fT) of 62 GHz, a maximum oscillation frequency(fmax) of 120 GHz at 35 GHz, and a maximum power output(Pmax) of 16 dBm, a power gain(GP) of 4 dB and a drain efficiency(DE) of 35.5 %.

• Journal of the Korea Academia-Industrial cooperation Society
• /
• v.11 no.10
• /
• pp.3917-3922
• /
• 2010

In this paper, 3 stage amplifier MMIC was designed and fabricated with U-band optimized epitaxal pHEMT that produced by large signal characterization and modeling for 60 GHz band. The pHEMT used in this paper, the gate $0.12\;{\mu}m$ length and total gate width of $100\;{\mu}m$, $200\;{\mu}m$ has been modeled using the large signal designed with negative feedback and MCLF instead of MIM capacitor for improving stability. Fabricated MMIC $2.5{\times}1.5mm^2$ size, current about 40 mA, operating frequency 59.5~60.5 GHz, gain 19.9~18.6 dB, input matching characteristics -14.6~-14.7 dB, output matching characteristics -11.9~-16.3 dB and output -5 dBm characteristics were obtained.

• The Journal of the Institute of Internet, Broadcasting and Communication
• /
• v.18 no.5
• /
• pp.63-68
• /
• 2018

In this paper, We intended to design various things for the realization of SoS(System on Substrate) with SIW in 24GHz ISM 밴드(24-24.25GHz). As part of them, We integrated SIW, transition and MPAA as SoS on the same substrate and investigated its characteristics. We used Rogers Ro4350 with relative permittivity of 3.48 and thickness of 20mil. As results of optimal design, insertion loss of the SIW with 11.55mm length showed 0.32dB and insertion loss of 0.19dB occurred in transition to $50{\Omega}$ microstrip. Characteristics of the MPAA integrated on the same substrate as SoS are very similar to those of stand-alone MPAA. But the integrated MPAA decreased by 0.58dB in gain, which is the sum of SIW insertion loss and transition insertion loss, and by 0.7dB in SLL compared that of stand-alone MPAA. However, the bandwidth was increased by 19.4% as it changed from 670MHz to 800Mhz.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.19 no.12
• /
• pp.1402-1409
• /
• 2008

In this paper, a low temperature co-fired ceramic cavity backed antenna in order to improve the performances of radiation and bandwidth for the antenna with high relative dielectric constant is proposed. Low temperature co-fired ceramic cavity consisted of several ground planes with closely spaced metallic vias connected. It is shown that the size of a low temperature co-fired ceramic cavity has the effects on the performances of radiation and bandwidth for the antenna. The proposed 2x4 low temperature co-fired ceramic cavity backed antenna is $10{\times}20\;mm^2$ in size. Measured results show antenna gain of $11.8{\sim}14.1\;dBi$ and bandwidth of 13 %(7.9 GHz) in the $57{\sim}64\;GHz$ band.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.24 no.9
• /
• pp.936-943
• /
• 2013

This work presents the design and measured results of the single channel automotive radar system for 76.5~77 GHz long range FMCW radar applications. The transmitter uses a commercial GaAs monolithic microwave integrated circuit(MMIC) and the receiver uses the down converter designed using 65 nm CMOS process. The output power of the transmitter is 10 dBm. The down converter chip can operate at low LO power as -8 dBm which is easily supplied from the transmitter output using a coupled line coupler. All MMICs are mounted on an aluminum jig which embeds the WR-10 waveguide. A microstrip to waveguide transition is designed to feed the embedded waveguide and finally high gain horn antennas. The overall size of the fabricated radar system is $80mm{\times}61mm{\times}21mm$. The radar system achieved an output power of 10 dBm, phase noise of -94 dBc/Hz at 1 MHz offset and a conversion gain of 12 dB.

• Journal of the Institute of Electronics and Information Engineers
• /
• v.54 no.1
• /
• pp.11-17
• /
• 2017

In this paper, an 8-direction switched beamforming antenna system at 28GHz frequency band is described for 5th generation wireless communication. This system is composed of an $8{\times}8$ Butler matrix and an 8-element patch array antenna. The antenna system switches beams in 8-direction in the wide range of ${\pm}40^{\circ}$. The antenna spacing is $0.65{\lambda}$ to achieve ${\pm}40^{\circ}$ steering range. Designed results show that the 8-direction beams are placed at ${\pm}6^{\circ}$, ${\pm}17^{\circ}$, ${\pm}28^{\circ}$, ${\pm}40^{\circ}$ offset from the center. Parasitic radiation effect from the large dimension Butler matrix need to be suppressed by employing a stripline structure.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.21 no.6
• /
• pp.670-680
• /
• 2010

A low power single-chip CMOS receiver for 60 GHz mobile application are proposed in this paper. The single-chip receiver consists of a 4-stage current re-use LNA with under 4 dB NF, Cgs compensating resistive mixer with -9.4 dB conversion gain, Ka-band low phase noise VCO with -113 dBc/Hz phase noise at 1 MHz offset from 26.89 GHz, high-suppression frequency doubler with -0.45 dB conversion gain, and 2-stage current re-use drive amplifier. The size of the fabricated receiver using a standard 0.13 ${\mu}m$ CMOS technology is 2.67 mm$\times$0.75 mm including probing pads. An RF bandwidth is 6.2 GHz, from 55 to 61.2 GHz and an LO tuning range is 7.14 GHz, from 48.45 GHz to 55.59 GHz. The If bandwidth is 5.25 GHz(4.75~10 GHz) The conversion gain and input P1 dB are -9.5 dB and -12.5 dBm, respectively, at RF frequency of 59 GHz. The proposed single-chip receiver describes very good noise performances and linearity with very low DC power consumption of only 21.9 mW.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.16 no.10 s.101
• /
• pp.1050-1058
• /
• 2005

This paper presents how to design and implement a very compact, cost effective and broad band receiver module for IEEE 802.16 FWA(Fixed Wireless Access) in the 40 GHz band. The presented receiver module is fabricated in a multi-layer LTCC(Low Temperature Cofired Ceramic) technology with cavity process to achieve excellent electrical performances. The receiver consists of two MMICs, low noise amplifier and sub-harmonic mixer, an embedded image rejection filter and an IF amplifier. CB-CPW, stripline, several bond wires and various transitions to connect each element are optimally designed to keep transmission loss low and module compact in size. The LTCC is composed of 6 layers of Dupont DP-943 with relative permittivity of 7.1. The thickness of each layer is 100 um. The implemented module is $20{\times}7.5{\times}1.5\;mm^3$ in size and shows an overall noise figure of 4.8 dB, an overall down conversion gain of 19.83 dB, input P1 dB of -22.8 dBm and image rejection value of 36.6 dBc. Furthermore, experimental results demonstrate that the receiver module is suitable for detection of Digital TV signal transmitted after up-conversion of $560\~590\;MHz$ band to 40 GHz.