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http://dx.doi.org/10.5515/KJKIEES.2010.21.6.670

60 GHz CMOS SoC for Millimeter Wave WPAN Applications  

Lee, Jae-Jin (Intelligent Radio Engineering Center, Korea Advanced Institute of Science and Technology)
Jung, Dong-Yun (Digital Media & Communications R&D Center, Samsung Electronics)
Oh, Inn-Yeal (Intelligent Radio Engineering Center, Korea Advanced Institute of Science and Technology)
Park, Chul-Soon (Intelligent Radio Engineering Center, Korea Advanced Institute of Science and Technology)
Publication Information
The Journal of Korean Institute of Electromagnetic Engineering and Science / v.21, no.6, 2010 , pp. 670-680 More about this Journal
Abstract
A low power single-chip CMOS receiver for 60 GHz mobile application are proposed in this paper. The single-chip receiver consists of a 4-stage current re-use LNA with under 4 dB NF, Cgs compensating resistive mixer with -9.4 dB conversion gain, Ka-band low phase noise VCO with -113 dBc/Hz phase noise at 1 MHz offset from 26.89 GHz, high-suppression frequency doubler with -0.45 dB conversion gain, and 2-stage current re-use drive amplifier. The size of the fabricated receiver using a standard 0.13 ${\mu}m$ CMOS technology is 2.67 mm$\times$0.75 mm including probing pads. An RF bandwidth is 6.2 GHz, from 55 to 61.2 GHz and an LO tuning range is 7.14 GHz, from 48.45 GHz to 55.59 GHz. The If bandwidth is 5.25 GHz(4.75~10 GHz) The conversion gain and input P1 dB are -9.5 dB and -12.5 dBm, respectively, at RF frequency of 59 GHz. The proposed single-chip receiver describes very good noise performances and linearity with very low DC power consumption of only 21.9 mW.
Keywords
60 GHz; WPAN; CMOS; Millimeter-Wave; SoC;
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