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AlGaAs/InGaAs/GaAs PHEMT power PHEMT with a 0.2 ${\mu}{\textrm}{m}$ gate length for MIMIC power amplifier.  

이응호 (수원대학교 정보통신과 초빙교수)
Publication Information
The Journal of Korean Institute of Communications and Information Sciences / v.27, no.4B, 2002 , pp. 365-371 More about this Journal
Abstract
In this paper, the fabricated power PHEMT devices for millimeter-wave that is below a gate-length of 0.2 $\mu\textrm{m}$ using electronic beam lithography technologies, and the DC and frequency characteristics and an output power characteristics were Measured at the various bias conditions. The unit process that is used in PHEMT's manufacture used that low-resistance ohmic contact, air-bridge and back-side lapping process technologies, and so on. The fabricated power PHEMT have an S521 gain of 4 dB and a maximum transconductance(gm) of 317 mS/mm, an unilateral current gain(fT) of 62 GHz, a maximum oscillation frequency(fmax) of 120 GHz at 35 GHz, and a maximum power output(Pmax) of 16 dBm, a power gain(GP) of 4 dB and a drain efficiency(DE) of 35.5 %.
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