• Title/Summary/Keyword: Micromachining system

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Microcantilever-based biosensor using the surface micromachining technique (표면 미세 가공기술을 이용한 마이크로 캔틸레버의 제작과 바이오션서로의 응용)

  • Yoo, Kyung-Ah;Joung, Seung-Ryong;Kang, Chi-Jung;Kim, Yong-Sang
    • Proceedings of the KIEE Conference
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    • 2005.07c
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    • pp.2407-2409
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    • 2005
  • 본 논문에서는 다양한 생물분자 감지를 위한 센서로 마이크로캔틸레버를 제안하였고 이것을 이용해 여러 생물 분자들을 광학적, 전기적으로 분석하였다. 마이로캔틸레버는 표면 미세 가공 기술로 제작되었고, 이러한 제작 방식은 공정이 간단하고 비용이 적게 들며 센서 array가 가능하다는 장점을 갖는다. 생물분자를 포함하는 용액을 주입하기 위하여 PDMS와 fused silica glass를 이용해 fluid cell system을 제작하였다. 마이크로캔틸레버 상단의 gold가 코팅된 부분에서 생물분자의 자기조립 (self assembly)현상이 일어나고 이는 마이크로캔틸레버 상, 하단의 표면 스트레스 차이를 야기 시킨다. 이로 인해 마이크로캔틸레버 자체의 휘어짐 현상이 일어나게 되고 이러한 휘어진 정도를 측정함으로써 마이크로캔틸레버의 생물분자 감지능을 확인할 수 있었다. Cystamine dihydrochloride와 glutaraldehyde 분자를 분석하였고 각기 다른 농도의 cystamine dihydrochloride 용액에서도 실험함으로써 농도별 감지능 또한 확인하였다. 이러한 생물분자 감지를 위한 마이크로캔틸레버의 센서로써의 성능은 u-TAS 와 lab-on-a-chip에서 유용히 이용될 수 있으리라 확신한다.

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Annealing Effects of Laser Ablated PZT Films

  • Rhie, Dong-Hee;Jung, Jin-Hwee;Cho, Bong-Hee;Ryutaro Maeda
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2000.07a
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    • pp.528-531
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    • 2000
  • Deposition of PZT with UV laser ablatio was applied for realization of thin film sensors and actuators. Deposition rate of more than 20nm/min was attained by pulsed KrF excimer laser deposition, which is fairly better than those obtained by the other methods. Perovskite phase was obtained at room temperature deposition with Fast Atom Beam(FAB) treatment and annealing. Smart MEMS(Micro electro-mechanical system) is now a suject of interest in the field of micro optical devices, micro pumps, AFM cantilever devices etc. It can be fabricated by deposition of PZT thin films and micromachining. PZT films of more than 1 micron thickness is difficult to obtain by conventional methods. This is the reason why we applied excimer laser ablation for thin film deposition. The remanent polarization Pr of 700nm PZT thin film was measured, and the relative dielectric constant was determined to about 900 and the dielectric loss tangent was also measured to be about 0.04. XRD analysis shows that, after annealing at 650 degrees C in 1 hour, the perovskite structure would be formed with some amount of pyrochlore phase, as is the case of the annealing at 750 degrees C in 1 hour.

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Manufacture of TSVs (Through-Silicon Vias) based on Single-Walled Nanotubes (SWNTs)/Sn Composite at Low Temperature (저온 공정을 통해 제작이 가능한 Sn/SWNT 혼합 파우더 기반의 TSV구조 개발)

  • Jung, Dong Geon;Jung, Daewoong;Kong, Seong Ho
    • Journal of Sensor Science and Technology
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    • v.28 no.2
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    • pp.127-132
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    • 2019
  • In this study, the fabrication of through-silicon vias (TSVs) filled with SWNTs/Sn by utilizing surface/bulk micromachining and MEMS technologies is proposed. Tin (Sn) and single-walled nanotube (SWNT) powders are used as TSV interconnector materials in the development of a novel TSV at low temperature. The measured resistance of a TSV filled with SWNT/Sn powder is considerably reduced by increasing the fraction of Sn and is lower than that of a TSV filled with only Sn. This is because of a decrease in the surface scattering of electrons along with an increase in the grain size of sintered SWNTs/Sn. The proposed method is conducted at low temperatures (< $400^{\circ}C$) due to the low melting temperature of Sn; hence, the proposed TSVs filled with SWNTs/Sn can be utilized in CMOS based applications.

Fabrication and characteristics of micro-machined thermoelectric flow sensor (실리콘 미세 가공을 이용한 열전형 미소유량센서 제작 및 특성)

  • Lee, Young-Hwa;Roh, Sung-Cheoul;Na, Pil-Sun;Kim, Kook-Jin;Lee, Kwang-Chul;Choi, Yong-Moon;Park, Se-Il;Ihm, Young-Eon
    • Journal of Sensor Science and Technology
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    • v.14 no.1
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    • pp.22-27
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    • 2005
  • A thermoelectric flow sensor for small quantity of gas flow rate was fabricated using silicon wafer semiconductor process and bulk micromachining technology. Evanohm R alloy heater and chromel-constantan thermocouples were used as a generation heat unit and sensing parts, respectively. The heater and thermocouples are thermally isolated on the $Si_{3}N_{4}/SiO_{2}/Si_{3}N_{4}$ laminated membrane. The characteristics of this sensor were observed in the flow rate range from 0.2 slm to 1.0 slm and the heater power from 0.72 mW to 5.63 mW. The results showed that the sensitivities $(({\partial}({\Delta}V)/{\partial}(\dot{q}));{\;}{\Delta}V$ : voltage difference, $\dot{q}$ : flow rate) were increased in accordance with heater power rise and decreasing of flow rate.

Characterization of thermally driven polysilicon micro actuator (폴리실리콘 마이크로 액츄에이터의 열구동 특성분석)

  • Lee, Chang-Seung;Lee, Jae-Youl;Chung, Hoi-Hwan;Lee, Jong-Hyun;Yoo, Hyung-Joun
    • Proceedings of the KIEE Conference
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    • 1996.07c
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    • pp.2004-2006
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    • 1996
  • A thermally driven polysilicon micro actuator has been fabricated using surface micromachining techniques. It consists of P-doped polysilicon as a structural layer and TEOS (tetracthylorthosilicate) as a sacrificial layer. The polysilicon was annealed for the relaxation of residual stress which is the main cause to its deformation such as bending and buckling. And the newly developed HF VPE (vapor phase etching) process was also used as an effective release method for the elimination of sacrificial TEOS layer. The thickneas of polysilicon is $2{\mu}m$ and the lengths of active and passive polysilicon cantilevers are $500{\mu}m$ and $260{\mu}m$, respectively. The actuation is incurred by die thermal expansion due to the current flow in the active polysilicon cantilever, which motion is amplified by lever mechanism. The moving distance of polysilicon micro actuator was experimentally conformed as large as $21{\mu}m$ at the input voltage level of 10V and 50Hz square wave. The actuating characteristics are investigated by simulating the phenomena of heat transfer and thermal expansion in the polysilicon layer. The displacement of actuator is analyzed to be proportional to the square of input voltage. These micro actuator technology can be utilized for the fabrication of MEMS (microelectromechanical system) such as micro relay, which requires large displacement or contact force but relatively slow response.

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Study on the Fabrication of the Low Loss Transmission Line and LPF using MEMS Technology (MEMS 기술을 이용한 저 손실 전송선로와 LPF의 공정에 관한 연구)

  • 이한신;김성찬;임병옥;백태종;고백석;신동훈;전영훈;김순구;박현창
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.14 no.12
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    • pp.1292-1299
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    • 2003
  • In this paper, we fabricated new GaAs-based dielectric-supported air gapped microstriplines(DAMLs) using the surface MEMS and the LPF for Ka-band using the fabricated DAMLs. We elevated the signal lines from the substrate, in order to reduce the substrate dielectric loss and obtain low losses at millimeter-wave frequency band with wide impedance range. We fabricated LPF with DAMLs for Ka-band. Due to reducing the dielectric loss of DAMLs, the insertion loss of LPF can be reduced. Miniature is essential to integrate LPF with active devices, so that we fabricated LPF with the slot on the ground to reduce the size of the LPF. We compared a characteristic to LPF with the slot and LPF without the slot.

Optimization of Laser Process Parameters for Realizing Optimal Via Holes for MEMS Devices (MEMS 소자의 비아 홀에 대한 레이저 공정변수의 최적화)

  • Park, Si-Beom;Lee, Chul-Jae;Kwon, Hui-June;Jun, Chan-Bong;Kang, Jung-Ho
    • Transactions of the Korean Society of Mechanical Engineers A
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    • v.34 no.11
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    • pp.1765-1771
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    • 2010
  • In the case of micro.electro-mechanical system (MEMS) devices, the quality of punched via hole is one of the most important factors governing the performance of the device. The common features that affect the laser micromachining of via holes drilled by using Nd:$YVO_4$ laser are described, and efficient optimization methods to measure them are presented. The analysis methods involving an orthogonal array, analysis of variance (ANOVA), and response surface optimization are employed to determine the main effects and to determine the optimal laser process parameters. The significant laser process parameters were identified and their effects on the quality of via holes were studied. Finally, an experiment in which the optimal levels of the laser process parameters were used was carried out to demonstrate the effectiveness of the optimization method.

Analysis of 6-Beam Accelerometer Using (111) Silicon Wafer by Finite Element Method ((111) 실리콘 웨이퍼를 이용한 6빔 가속도센서의 유한요소법 해석)

  • Sim, Jun-Hwan;Kim, Dong-Kwon;Seo, Chang-Taeg;Yu, In-Sik;Lee, Jong-Hyun
    • Journal of Sensor Science and Technology
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    • v.6 no.5
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    • pp.346-355
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    • 1997
  • In this paper, the analyses of the stress disturibution and frequency characteristics of silicon microstructures for an accelerometer were performed using the general purpose finite element simulation program, ANSYS. From the analyses, we determined the parameter values of a new 6-beam piezoresistive accelerometer applicable to the accelerometer's specification in airbag system of automobile. Then, the mass paddle radius, beam length, beam width, and beam thickness of the designed accelerometer were$500{\mu}m$, $350{\mu}m$, $100{\mu}m$, and $5{\mu}m$, respectively and two different seismic masses with 0.4 mg and 0.8 mg were defined on the same sensor structure. The designed 6- beam accelerometers were fabricated on the selectively diffused (111)-oriented $n/n^{+}/n$ silicon substrates and the characteristics of the fabricated accelerometers were investigated. Then, we used a micromachining technique using porous silicon etching method for the formation of the micromechanical structure of the accelerometer.

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