• Journal of Advanced Navigation Technology
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• v.18 no.6
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• pp.600-608
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• 2014

In this paper, CABAC H/W module is developed using co-design method. After entire H.264/AVC encoder was developed with C using reference SW(JM), CABAC H/W IP is developed as a block in H.264/AVC encoder. Context modeller of CABAC is included on the hardware to update the changed value during binary encoding, which enables the efficient usage of memory and the efficient design of I/O stream. Hardware IP is co-operated with the reference software JM of H.264/AVC, and executed on Virtex-4 FX60 FPGA on ML410 board. Functional simulation is done using Modelsim. Compared with existing H/W module of CABAC with register-level design, the development time is reduced greatly and software engineer can design H/W module more easily. As a result, the used amount of slice in CABAC is less than 1/3 of that of CAVLC module. The proposed co-design method is useful to provide hardware accelerator in need of speed-up of high efficient video encoder in embedded system.

• Journal of Advanced Navigation Technology
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• v.21 no.3
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• pp.213-219
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• 2017

Large satellite development programs might take decades to build, launch and operate in space environments at costs in excess of a billion dollars. However, small satellites can reduce the costs not only by using commercial software and sensors, but also by shortening the development period to two years or less. In this paper, we discuss the development status of small satellites, and propose some military applications of small satellites. First, we describe the industrial trends of small satellites in advanced countries such as the United States and Japan. Also, we describe the development status of small satellites in Korea. Military applications are largely classified into education, research, and operational purposes. Small satellites are developing rapidly in commercial markets and they will play an important role in military sector. Therefore, the military should consider small satellites as important strategic assets in future conflicts and provide means to develop them.

• The Transactions of the Korean Institute of Power Electronics
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• v.9 no.4
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• pp.311-318
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• 2004

Generally, PM BLDC drive system is necessary that the three Hall-ICs evenly be distributed around the stator circumference and encoder installed in case of the 3 phase motor. The Hall-ICs are set up in this motor to detect the main flux from the rotor. So the output signal from Hall-ICs is used to drive a power transistor to control the stator winding current. Instead of using three Hall-ICs and encoder, this paper uses only two Hall-ICs for the permanent magnet rotor position and for the speed feedback signals, and uses a micro controller of 16-bit type(80C196KC) with the 3 phase PM BLDC whose six stator and two rotor designed. Two Hall-IC Hc and $H_B$ are placed on the endplate at 120 degree phase difference. With these elements, we estimate information of the other phase in sequence through a rotating rotor.

• Journal of Sensor Science and Technology
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• v.22 no.2
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• pp.150-155
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• 2013

Recently, various hearing aids are developed to overcome hearing loss. There are available hearing aids, such as air conduction hearing aid, implantable middle ear hearing aid and so on. But air conduction hearing aid is inconvenience caused by howling, and ossicle chain driving type implantable middle ear hearing aid has some week point due to problem of possible nercobiosis of coupling spot along incus long process. In recent years, in order to improve these shortcomings round window (RW) driving hearing aid has been paying attention. In this paper, the physical cochlear model is proposed for a performance evaluation of the RW driving hearing aids of a transducer. In order to verify an experiment proposed on a performance of physical cochlear model, the transducer which has ossicles characteristics is used. By measuring and comparing the frequency characteristics of transducer with ossicles and human temporal bone, performance of physical cochlear model was verified. As from the result of experiment, it is expected that an implemented cochlear model is useful for evaluating characteristics of RW transducer.

• Korean Journal of Materials Research
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• v.12 no.3
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• pp.211-214
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• 2002

Properties of 52/48 PZT films with various thicknesses for piezoelectric micro-electro mechanical systems (MEMS) devices fabricated by multi-coating method on $Pt(3500{\AA})/Ti(400{\AA})/SiO_2(3000{\AA})/Si$(525$\mu\textrm{m}$) substrates were investigated. PZT films were deposited by spin-coating process at 3500 rpm for 30 sec, followed by pyrolysis at 45$0^{\circ}C$ for 10 min producing the thickness of about 120nm. These processes were repeated 4, 8, 12, 16 and 20 times in order to have various thicknesses, respectively. Finally, they were crystallized at $650^{\circ}C$ for 30 min. All thick PZT films showed dense and homogeneous surface microstructures. Thick PZT films showed crystalline structures of random orientations with increasing thickness. Dielectric constants of thick PZT films were increased with increasing film thickness and reached 800 at 100kHz for 2.3$\mu\textrm{m}$ thick PZT film. $P_r\; and\; E_c$ of 2.3$\mu\textrm{m}$ thick PZT films were about 20$\mu$C/$\textrm{cm}^2$ and 63kV/cm. Depth profile analysis by Auger Electron Spectroscopy (AES) of 4800 $\AA$ thick PZT film showed the formation of the perovskite phase on Pt layer by Pb diffusion behavior. It was considered that Pb-Pt intermediate layer promoted PZT (111) columnar structures.

• The Transactions of the Korean Institute of Power Electronics
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• v.6 no.1
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• pp.34-42
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• 2001

A battery is the device that transforms the chemical energy into the direct-current electrical energy directly without a mechanical process. Unit cells are connected in series to obtain the required voltage, while being connected in parallel to organize capacity for load current and to decrease the internal resistance for corresponding the sudden shift of the load current. Because the voltage droop down in one set of battery is faster than in tow one, it amy result in the low efficiency of power converter with the voltage drop and cause the system shutdown. However, when the system being driven in parallel, a circular-current can be generated. The changing current differs in each set of battery because the system including batteries, rectifiers and loads is connected in parallel and it makes the charge voltage constant. It is shown that, as a result the new batteries are heated by over-charge and over-discharge, and the over charge current increases rust of the positive grid and consequently shortens the lifetime of the new batteries. The difference between the new batteries and old ones is the amount of internal resistance. In this paper, we can detect the unbalance current using the micro-processor and achieve the balance current by adjusting resistance of each set. The internal resistance of each set becomes constant and the current of charge and discharge comes to be balanced by inserting the external resistance into the system and calculating the change of internal resistance.

• Journal of Power Electronics
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• v.16 no.3
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• pp.1226-1235
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• 2016

For wearable health monitoring systems, a fundamental problem is the limited space for storing energy, which can be translated into a short operational life. In this paper, a highly efficient active voltage doubling rectifier with a wide input range for micro-piezoelectric energy harvesting systems is proposed. To obtain a higher output voltage, the Dickson charge pump topology is chosen in this design. By replacing the passive diodes with unbalanced-biased comparator-controlled active counterparts, the proposed rectifier minimizes the voltage losses along the conduction path and solves the reverse leakage problem caused by conventional comparator-controlled active diodes. To improve the rectifier input voltage sensitivity and decrease the minimum operational input voltage, two low power common-gate comparators are introduced in the proposed design. To keep the comparator from oscillating, a positive feedback loop formed by the capacitor C is added to it. Based on the SMIC 0.18-μm standard CMOS process, the proposed rectifier is simulated and implemented. The area of the whole chip is 0.91×0.97 mm², while the rectifier core occupies only 13% of this area. The measured results show that the proposed rectifier can operate properly with input amplitudes ranging from 0.2 to 1.0V and with frequencies ranging from 20 to 3000 Hz. The proposed rectifier can achieve a 92.5% power conversion efficiency (PCE) with input amplitudes equal to 0.6 V at 200 Hz. The voltage conversion efficiency (VCE) is around 93% for input amplitudes greater than 0.3 V and load resistances larger than 20kΩ.

• The Transactions of the Korean Institute of Power Electronics
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• v.20 no.6
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• pp.517-525
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• 2015

A grid connected inverter must be operated as the main electricity source under an isolated condition caused by the grid problem. Conventionally, the dual loop controller is used for the grid inverter, and the controller is used for control under the stand-alone mode. Generally, the PI(Proportional - Integral) controller is highly efficient under a synchronous reference frame, and stable control can be available. However, in this synchronous frame-based control, high-quality DSP is required because many sinusoidal calculations are necessary. When the PI control is conducted under a stationary frame, the controller constructions are made simple so that they work even with a low-price micro controller. However, given the characteristics of the PI controller, it should be designed with the phase of reference voltage considered. Otherwise, the phase delay of the output voltage can occur. Although the current controller also has a higher bandwidth than the voltage controller, distortion of the voltage is difficult to avoid only by the rapid response of the PI controller, as a sudden load change can occur in the nonlinear load. In this study, a new control method that solves the voltage controller bandwidth problem and rapidly copes with it even in the nonlinear load situation is proposed. The validity of the proposed method is proved by simulation and experimental results.

• The Transactions of the Korean Institute of Power Electronics
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• v.15 no.3
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• pp.218-225
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• 2010

This paper deals with a method to minimize the welding time for an AC spot welding system. The spot welding system using a conventional SCR type circuit has a disadvantage of slow control speed and no precise current control. Therefore, recently, the using of inverter type welding system is increasing. Conventional welding machine adopts several tens of switching devices connected in parallel to obtain a huge current of several thousands ampere with a short welding time. This paper analyzed a welding system consisting with 4 IGBT switches for a full-bridge inverter and conventional 60 [Hz] transformer. The simulation and experimental results show the validity of the proposed method.

• Journal of IKEEE
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• v.17 no.2
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• pp.182-188
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• 2013

Using a ceramic target ZnO:In with In doping concentration of 2%, hetero-junctions of n-ZnO:In/p-Si and p-ZnO:(In, N)/n-Si were fabricated by depositing Indium doped n - type ZnO (ZnO:In or IZO) and Indium-nitrogen co-doped p - type ZnO (ZnO:(In, N)) films on wafers of p-Si (100) and n-Si (100) by DC magnetron sputtering, respectively. These films with the best electrical and optical properties were then obtained. The micro-structural, optical and electrical properties of the n-type and p-type semiconductor thinfilms were characterized by X-ray diffraction (XRD), RBS, UV-vis; four-point probe resistance and room-temperature Hall effect measurements, respectively. Typical rectifying behaviors of p-n junction were observed by the current-voltage (I-V) measurement. It shows fairly good rectifying behavior with the fact that the ideality factor and the saturation current of diode are n=11.5, Is=1.5108.10-7 (A) for n-ZnO:In/p-Si hetero-jucntion; n=10.14, Is=3.2689.10-5 (A) for p-ZnO:(In, N)/n-Si, respectively. These results demonstrated the formation of a diode between n-type thin film and p-Si, as well as between p-type thin film and n-Si..