Browse > Article
http://dx.doi.org/10.3740/MRSK.2002.12.3.211

Microstructures and Electrical Properties of Thick PZT Films with Thickness Variation Fabricated by Multi-coating Method  

Park, Jun-Sik (MEMS Research Center, Korea Electronics Technoogy Institute)
Jang, Yeon-Tae (Dept. of Materials Science and Eng. Ajou Univ.)
Park, Hyo-Deok (MEMS Research Center, Korea Electronics Technoogy Institute)
Choe, Seung-Cheol (Dept. of Materials Science and Eng. Ajou Univ.)
Gang, Seong-Gun (Dept. of Materials Science and Eng. Ajou Univ.)
Publication Information
Korean Journal of Materials Research / v.12, no.3, 2002 , pp. 211-214 More about this Journal
Abstract
Properties of 52/48 PZT films with various thicknesses for piezoelectric micro-electro mechanical systems (MEMS) devices fabricated by multi-coating method on $Pt(3500{\AA})/Ti(400{\AA})/SiO_2(3000{\AA})/Si$(525$\mu\textrm{m}$) substrates were investigated. PZT films were deposited by spin-coating process at 3500 rpm for 30 sec, followed by pyrolysis at 45$0^{\circ}C$ for 10 min producing the thickness of about 120nm. These processes were repeated 4, 8, 12, 16 and 20 times in order to have various thicknesses, respectively. Finally, they were crystallized at $650^{\circ}C$ for 30 min. All thick PZT films showed dense and homogeneous surface microstructures. Thick PZT films showed crystalline structures of random orientations with increasing thickness. Dielectric constants of thick PZT films were increased with increasing film thickness and reached 800 at 100kHz for 2.3$\mu\textrm{m}$ thick PZT film. $P_r\; and\; E_c$ of 2.3$\mu\textrm{m}$ thick PZT films were about 20$\mu$C/$\textrm{cm}^2$ and 63kV/cm. Depth profile analysis by Auger Electron Spectroscopy (AES) of 4800 $\AA$ thick PZT film showed the formation of the perovskite phase on Pt layer by Pb diffusion behavior. It was considered that Pb-Pt intermediate layer promoted PZT (111) columnar structures.
Keywords
sol-gel; PZT; thick film; multi-coating; MEMS devices;
Citations & Related Records
연도 인용수 순위
  • Reference
1 C.C. Hsueh et al., Sol-Gel Derived Ferroelectric Thin Films in silicon Micromachining, Int. Ferro., 3, p. 21, (1993)   DOI
2 K. Yamashita, Hiroshi Katata et al., High-Directivity Array of Ultrasonic Micro Sensor Using PZT Film on Si Diaphragm, Trans.01.Int. Conf., 1B3-02, (2001)
3 B. Xu, L.E. Cross and J. Bernstein., Ferroelectric and antiferroelectric films for microelectromechanical systems applications, Thin Solid Films, 377, p. 712, (2000)   DOI   ScienceOn
4 K. Miyazata, Kunio Ito, Joachim Mayer and Manferd Ruhle, Structure of Duplex Multilayer $Pb(Zr_{0.53}Ti_{0.47})O_3$ Films Prepared by Sol-Gel Processing, J. Am. Ceram. Soc., 81, p. 2333, (1998)   DOI   ScienceOn
5 D. Kaewchinda, T. Chairaungrsri, M. Naksata, S.J. Milne and R. Brydson, TEM characterization of PZT films prepared by a diol route on platinised silicon substrates, J. Eurp. Ceram. Soc., 20, p. 1277, (2000)   DOI   ScienceOn
6 S. Kalpat, X. Du, I.R. Anothu, A. Akiba, H. Goto and K. Uchino, Effect of crystal orientation on dielectric properties of lead zirocnium titanate thin films prepared by reactive RF-Sputtering, Jpn. J. Appl. Phys., 40, p. 713, (2001)   DOI
7 S.A. Impley, Z. Huang, A. Patel, R. Beanland, N. M. Shorrocks, R. Watton and R.W. Whatmore, Microstructural characterization of sol-gel lead-zirconate-titanate thin films, J. Appl. Phys., 83, p. 2202, (1998) doi:   DOI   ScienceOn