• Title/Summary/Keyword: Micro deposition

Search Result 465, Processing Time 0.025 seconds

Review on Effective Skills to Inhibit Dendrite Growth for Stable Lithium Metal Electrode (리튬금속전극의 덴드라이트 성장 억제 방안의 연구 동향)

  • Kim, Yerang;Park, Jihye;Hwang, Yujin;Jung, Cheolsoo
    • Journal of the Korean Electrochemical Society
    • /
    • v.25 no.2
    • /
    • pp.51-68
    • /
    • 2022
  • Although lithium metal batteries have a high energy density, experimental skills capable of solving lots of problems induced by dendrite such as short circuit, low coulomb efficiency, capacity loss, and cycle performance are still only in academic research stage. In this paper, research cases for dendrite growth inhibition on lithium metal electrode were classified into four types: flexible SEI (solid electrolyte interface) layer responding to volume expansion of lithium metal electrode, SEI supporting layer to inhibit dendrite growth physically, SHES (self-healing electrostatic shield) mechanism to adjust lithium growth by leading uniform diffusion of Li+ ions, and finally micro-patterning to induce uniform deposition of lithium. We hope to advance the practical use of lithium metal electrode by analyzing pros and cons of this classification.

Silencing of the Target of Rapamycin Complex Genes Stimulates Tomato Fruit Ripening

  • Choi, Ilyeong;Ahn, Chang Sook;Lee, Du-Hwa;Baek, Seung-A;Jung, Jung Won;Kim, Jae Kwang;Lee, Ho-Seok;Pai, Hyun-Sook
    • Molecules and Cells
    • /
    • v.45 no.9
    • /
    • pp.660-672
    • /
    • 2022
  • The target of rapamycin complex (TORC) plays a key role in plant cell growth and survival by regulating the gene expression and metabolism according to environmental information. TORC activates transcription, mRNA translation, and anabolic processes under favorable conditions, thereby promoting plant growth and development. Tomato fruit ripening is a complex developmental process promoted by ethylene and specific transcription factors. TORC is known to modulate leaf senescence in tomato. In this study, we investigated the function of TORC in tomato fruit ripening using virus-induced gene silencing (VIGS) of the TORC genes, TOR, lethal with SEC13 protein 8 (LST8), and regulatory-associated protein of TOR (RAPTOR). Quantitative reverse transcription-polymerase chain reaction showed that the expression levels of tomato TORC genes were the highest in the orange stage during fruit development in Micro-Tom tomato. VIGS of these TORC genes using stage 2 tomato accelerated fruit ripening with premature orange/red coloring and decreased fruit growth, when control tobacco rattle virus 2 (TRV2)-myc fruits reached the mature green stage. TORC-deficient fruits showed early accumulation of carotenoid lycopene and reduced cellulose deposition in pericarp cell walls. The early ripening fruits had higher levels of transcripts related to fruit ripening transcription factors, ethylene biosynthesis, carotenoid synthesis, and cell wall modification. Finally, the early ripening phenotype in Micro-Tom tomato was reproduced in the commercial cultivar Moneymaker tomato by VIGS of the TORC genes. Collectively, these results demonstrate that TORC plays an important role in tomato fruit ripening by modulating the transcription of various ripening-related genes.

Effects of Neutral Particle Beam on Nano-Crystalline Silicon Thin Film Deposited by Using Neutral Beam Assisted Chemical Vapor Deposition at Room Temperature

  • Lee, Dong-Hyeok;Jang, Jin-Nyoung;So, Hyun-Wook;Yoo, Suk-Jae;Lee, Bon-Ju;Hong, Mun-Pyo
    • Proceedings of the Korean Vacuum Society Conference
    • /
    • 2012.08a
    • /
    • pp.254-255
    • /
    • 2012
  • Interest in nano-crystalline silicon (nc-Si) thin films has been growing because of their favorable processing conditions for certain electronic devices. In particular, there has been an increase in the use of nc-Si thin films in photovoltaics for large solar cell panels and in thin film transistors for large flat panel displays. One of the most important material properties for these device applications is the macroscopic charge-carrier mobility. Hydrogenated amorphous silicon (a-Si:H) or nc-Si is a basic material in thin film transistors (TFTs). However, a-Si:H based devices have low carrier mobility and bias instability due to their metastable properties. The large number of trap sites and incomplete hydrogen passivation of a-Si:H film produce limited carrier transport. The basic electrical properties, including the carrier mobility and stability, of nc-Si TFTs might be superior to those of a-Si:H thin film. However, typical nc-Si thin films tend to have mobilities similar to a-Si films, although changes in the processing conditions can enhance the mobility. In polycrystalline silicon (poly-Si) thin films, the performance of the devices is strongly influenced by the boundaries between neighboring crystalline grains. These grain boundaries limit the conductance of macroscopic regions comprised of multiple grains. In much of the work on poly-Si thin films, it was shown that the performance of TFTs was largely determined by the number and location of the grain boundaries within the channel. Hence, efforts were made to reduce the total number of grain boundaries by increasing the average grain size. However, even a small number of grain boundaries can significantly reduce the macroscopic charge carrier mobility. The nano-crystalline or polymorphous-Si development for TFT and solar cells have been employed to compensate for disadvantage inherent to a-Si and micro-crystalline silicon (${\mu}$-Si). Recently, a novel process for deposition of nano-crystralline silicon (nc-Si) thin films at room temperature was developed using neutral beam assisted chemical vapor deposition (NBaCVD) with a neutral particle beam (NPB) source, which controls the energy of incident neutral particles in the range of 1~300 eV in order to enhance the atomic activation and crystalline of thin films at room temperature. In previous our experiments, we verified favorable properties of nc-Si thin films for certain electronic devices. During the formation of the nc-Si thin films by the NBaCVD with various process conditions, NPB energy directly controlled by the reflector bias and effectively increased crystal fraction (~80%) by uniformly distributed nc grains with 3~10 nm size. The more resent work on nc-Si thin film transistors (TFT) was done. We identified the performance of nc-Si TFT active channeal layers. The dependence of the performance of nc-Si TFT on the primary process parameters is explored. Raman, FT-IR and transmission electron microscope (TEM) were used to study the microstructures and the crystalline volume fraction of nc-Si films. The electric properties were investigated on Cr/SiO2/nc-Si metal-oxide-semiconductor (MOS) capacitors.

  • PDF

Infrared absorbance of the Au-black deposited under nitrogen gas-filled low vacuum condition (질소가스 분위기의 저진공으로 증착된 Au-black의 적외선 흡수도)

  • O, Gwang-Sik;Kim, Dong-Jin;Kim, Jin-Seop;Lee, Jeong-Hui;Lee, Yong-Hyeon;Lee, Jae-Sin;Han, Seok-Yong
    • Journal of the Institute of Electronics Engineers of Korea SD
    • /
    • v.37 no.2
    • /
    • pp.13-21
    • /
    • 2000
  • Au-black for the application of the long wavelength infrared absorber has been prepared by evaporating Au under nitrogen gas-filled low vacuum condition. Characteristics of the deposited Au-black were carefully investigated through structural analysis, infrared absorbance measurement, and patterning of the layer, all of which are dependent on the deposition condition. High density of micro-cavity that trapped infrared were obtained, and infrared absorbance in the wavelength range from 3 $\mu\textrm{g}$ to 14 $\mu\textrm{g}$ was found to be about 90% when the Au-black layer was produced under the deposition condition of mass Per area of about 600 $\mu\textrm{g}$/cm$^{2}$ and chamber pressure of above 1 Torr. Photoresist lift-off process could be performed to pattern the Au-black, of which mass per area was below 900 $\mu\textrm{g}$/cm/ sup 2/. In view of absorbance, heat capacity, and pattern formation, the deposition condition of chamber pressure of about 1 Tow and mass per area of about 600$\mu\textrm{g}$/cm$^{2}$ was most adequate for preparing the Au-black as an infrared absorber.

  • PDF

Comparison of Mechanical properties and Surface Friction of White Metals Produced by Centrifugal and Laser Cladded on SCM440 (원심주조방식과 레이저 클래딩 증착법을 통한 화이트메탈의 기계 및 마찰특성 비교)

  • Jeong, Jae-Il;Kim, Dong-Hyuk;Park, Jin-Young;Oh, Joo-Young;Choi, Si-Geun;Kim, Seock-Sam;Cho, Young Tae;Lee, Ho;Ham, Seung-Sik;Kim, Jong-Hyoung
    • Tribology and Lubricants
    • /
    • v.34 no.3
    • /
    • pp.84-92
    • /
    • 2018
  • Bearings are essential for reducing vibration and wear, in order to achieve high durability and increase longevity. White metal treatment of tilting pads via centrifugal casting method has the possibility of increasing durability. However, this manufacturing method has drawbacks such as long processing time, high defect rate, and harmful health effects. Laser cladding deposition technique is a powerful method that can address these issues by decreasing the processing time and providing good adhesion. In this study, we suggest optimum conditions for laser cladding deposition that can be used in industrial applications. We deposited a soft white metal layer on SCM440 that is primarily used in shafts to minimize wear of bearing pads. During the laser deposition process, we controlled factors such as laser power, powder feed rate, and laser head speed to determine the optimum conditions. In addition, we measured the hardness using micro Vickers, and performed field emission scanning electron microscopy, energy dispersive X-ray spectroscopy, X-ray diffraction, and friction tests to investigate the mechanical properties and surface characteristics for different parameters. Based on the experimental results, we suggest that laser power, powder feed rate, and laser head speed of 1.3 kW, 2.5 rpm, and 10 mm/s, respectively, constitute the optimum conditions for producing white metals using laser cladding.

Hexagonal Boron Nitride Monolayer Growth without Aminoborane Nanoparticles by Chemical Vapor Deposition

  • Han, Jaehyu;Yeo, Jong-Souk
    • Proceedings of the Korean Vacuum Society Conference
    • /
    • 2014.02a
    • /
    • pp.409-409
    • /
    • 2014
  • Recently hexagonal boron nitride (h-BN), III-V compound of boron and nitrogen with strong covalent $sp^2$ bond, is a 2 dimensional insulating material with a large direct band gap up to 6 eV. Its outstanding properties such as strong mechanical strength, high thermal conductivity, and chemical stability have been reported to be similar or superior to graphene. Because of these excellent properties, h-BN can potentially be used for variety of applications such as dielectric layer, deep UV optoelectronic device, and protective transparent substrate. Ultra flat and charge impurity-free surface of h-BN is also an ideal substrate to maintain electrical properties of 2 dimensional materials such as graphene. To synthesize a single or a few layered h-BN, chemical vapor deposition method (CVD) has been widely used by using an ammonia borane as a precursor. Ammonia borane decomposes into hydrogen (gas), monomeric aminoborane (solid), and borazine (gas) that is used for growing h-BN layer. However, very active monomeric aminoborane forms polymeric aminoborane nanoparticles that are white non-crystalline BN nanoparticles of 50~100 nm in diameter. The presence of these BN nanoparticles following the synthesis has been hampering the implementation of h-BN to various applications. Therefore, it is quite important to grow a clean and high quality h-BN layer free of BN particles without having to introduce complicated process steps. We have demonstrated a synthesis of a high quality h-BN monolayer free of BN nanoparticles in wafer-scale size of $7{\times}7cm^2$ by using CVD method incorporating a simple filter system. The measured results have shown that the filter can effectively remove BN nanoparticles by restricting them from reaching to Cu substrate. Layer thickness of about 0.48 nm measured by AFM, a Raman shift of $1,371{\sim}1,372cm^{-1}$ measured by micro Raman spectroscopy along with optical band gap of 6.06 eV estimated from UV-Vis Spectrophotometer confirm the formation of monolayer h-BN. Quantitative XPS analysis for the ratio of boron and nitrogen and CS-corrected HRTEM image of atomic resolution hexagonal lattices indicate a high quality stoichiometric h-BN. The method presented here provides a promising technique for the synthesis of high quality monolayer h-BN free of BN nanoparticles.

  • PDF

Effects of protein content and the inclusion of protein sources with different amino acid release dynamics on the nitrogen utilization of weaned piglets

  • Hu, Nianzhi;Shen, Zhiwen;Pan, Li;Qin, Guixin;Zhao, Yuan;Bao, Nan
    • Animal Bioscience
    • /
    • v.35 no.2
    • /
    • pp.260-271
    • /
    • 2022
  • Objective: We aimed to investigate the effect of the differing amino acid (AA) release dynamics of two protein sources on the growth performance, nitrogen deposition, plasma biochemical parameters, and muscle synthesis and degradation of piglets when included in their diets at normal and low concentrations. Methods: Forty-eight piglets (Duroc×Landrace×Large White) with initial body weight of 7.45±0.58 kg were assigned to six groups and fed one of 6 diets. The 6 dietary treatments were arranged by 3×2 factorial with 3 protein sources and 2 dietary protein levels. They are NCAS (a normal protein content with casein), NBlend (a normal protein content with blend of casein and corn gluten meal), NCGM (a normal protein content with corn gluten meal), LCAS (a low protein content with casein), LBlend (a low protein content with blend of casein and corn gluten meal), LCGM (a low protein content with corn gluten meal). The release dynamics of AA in these diets were determined by in vitro digestion. The digestibility, utilization and biological value of nitrogen in piglets were determined by micro Kjeldahl method. Plasma insulin was measured by enzyme-linked immunosorbent assay kits. The protein expression of mediators of muscle synthesis and degradation was determined by western blotting. Results: Although the consumption of a low-protein diet supplemented with crystalline AA was associated with greater nitrogen digestion and utilization (p<0.05), the final body weight, growth performance, nitrogen deposition, and phosphorylation of ribosomal protein S6 kinase 1 and eIF4E binding protein 1 in the muscle of pigs in the low-protein diet-fed groups were lower than those of the normal-protein diet-fed groups (p<0.05) because of the absence of non-essential AA. Because of the more balanced release of AA, the casein (CAS) and Blend-fed groups showed superior growth performance, final body weight and nitrogen deposition, and lower expression of muscle ring finger 1 and muscle atrophy F-box than the CGM-fed groups (p<0.05). Conclusion: We conclude that the balanced release of AA from CAS containing diets and mixed diets could reduce muscle degradation, favor nitrogen retention, % intake and improve growth performance in pigs consuming either a normal- or low-protein diet.

Performance of OLED Fabricated on the ITO Deposited by Facing Target Sputtering (대향식 스퍼터링법으로 증착된 ITO 양극 위에 제작된 OLED 성능)

  • Yoon, Chul;Kim, Sang-Ho
    • Journal of the Korean institute of surface engineering
    • /
    • v.41 no.5
    • /
    • pp.199-204
    • /
    • 2008
  • Indium tin oxide (ITO) has been commonly used as an anode for organic light emitting diode (OLED), because of its relatively high work function, high transmittance, and low resistance. The ITO was mostly deposited by capacitive type DC or RF sputtering. In this study we introduced a new facing target sputtering method. On applying this new sputtering method, the effect of fundamental deposition parameters such as substrate heating and post etching were investigated in relation to the resultant I-V-L characteristics of OLED. Three kinds of ITOs deposited at room temperature, at $400^{\circ}C$ and at $400^{\circ}C$ with after surface modification by $O_2$ plasma etching were compared. The OLED on ITO deposited with substrate heating and followed by etching showed better I-V-L characteristics, which starts to emit light at 4 volts and has luminescence of $65\;cd/m^2$ at 9 volts. The better I-V-L characteristics were ascribed to the relevant surface roughness with uniform micro-extrusions and to the equi-axed micromorphology of ITO surface.

Pentacene Thin Film Transistors Fabricated by High-aspect Ratio Metal Shadow Mask

  • Jin, Sung-Hun;Jung, Keum-Dong;Shin, Hyung-Chul;Park, Byung-Gook;Lee, Jong-Duk;Yi, Sang-Min;Chu, Chong-Nam
    • 한국정보디스플레이학회:학술대회논문집
    • /
    • 2004.08a
    • /
    • pp.881-884
    • /
    • 2004
  • The robust and large-area applicable metal shadow masks with a high aspect ratio more than 20 are fabricated by a combination of micro-electro-discharge machining (${\mu}$-EDM) and electro chemical etching (ECE). After defining S/D contacts using a 100 ${\mu}m$ thick stainless steel shadow mask, the top-contact pentacene TFTs with channel length of 5 ${\mu}m$ showed routinely the results of mobility of 0.498 ${\pm}$ 0.05 $cm^2$/Vsec, current on/off ratio of 1.6 ${times}$ $10^5$, and threshold voltage of 0 V. The straightly defined atomic force microscopy (AFM) images of channel area demonstrated that shadow effects caused by the S/D electrode deposition were negligible. The fabricated pentacene TFTs have an average channel length of 5 ${\pm}$ 0.25 ${\mu}m$.

  • PDF

Hydroxyapatite-Zirconia Composite Thin Films Showing Improved Mechanical Properties and Bioactivity

  • Kim, Min-Seok;Ryu, Jae-Jun;Sung, Yun-Mo
    • Korean Journal of Materials Research
    • /
    • v.19 no.2
    • /
    • pp.85-89
    • /
    • 2009
  • Nano-crystalline hydroxyapatite (HAp) films were formed at the Ti surface by a single-step microarc oxidation (MAO), and HAp-zirconia composite (HZC) films were obtained by subsequent chemical vapor deposition (CVD) of zirconia onto the HAp. Through the CVD process, zero- and one-dimensional zirconia nanostructures having tetragonal crystallinity (t-ZrO2) were uniformly distributed and well incorporated into the HAp crystal matrix to form nanoscale composites. In particular, (t-$ZrO_2$) was synthesized at a very low temperature. The HZC films did not show secondary phases such as tricalcium phosphate (TCP) and tetracalcium phosphate (TTCP) at relatively high temperatures. The most likely mechanism for the formation of the t-$ZrO_2$ and the pure HAp at the low processing temperature was proposed to be the diffusion of $Ca^{2+}$ ions. The HZC films showed increasing micro-Vickers hardness values with increases in the t-$ZrO_2$ content. The morphological features and phase compositions of the HZC films showed strong dependence on the time and temperature of the CVD process. Furthermore, they showed enhanced cell proliferation compared to the $TiO_2$ and HAp films most likely due to the surface structure change.