• 한국결정학회지
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• 제13권2호
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• pp.57-62
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• 2002

MgO(001)면 위에 Ti 금속을 증착시킨 후 400℃에서 산소에 노출시킴으로써 헤테로 에피탁시 TiO 막을 성장시켰다. 성장된 TiO막의 원자구조를 비행시간형 직충돌 이온산란 분광법을 사용하여 해석하였다. MgO(001)면에 성장된 에피탁시 TiO막은 다음과 같은 구조를 갖고 있음이 밝혀졌다. Ti및 O 원자가 MgO 원자의 위에 위치하여 면내방향의 격자상수는 MgO의 격자상수와 일치하고, TiO막의 표면은 3차원적 섬 형상이 없는 평활한 구조를 가지고 있다.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2013년도 춘계학술대회 논문집
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• pp.112-113
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• 2013

Thin CrAlMgSiN films, whose composition were 30.6Cr-11.1Al-7.3Mg-1.2Si-49.8N (at.%), were deposited on steel substrates in a cathodic arc plasma deposition system. They consisted of alternating crystalline Cr-N and AlMgSiN nanolayers. After oxidation at $800^{\circ}C$ for 200 h in air, a thin oxide layer formed by outward diffusion of Cr, Mg, Al, Fe, and N, and inward diffusion of O ions. Silicon ions were relatively immobile at $800^{\circ}C$. After oxidation at $900^{\circ}C$ for 10 h in air, a thin $Cr_2O_3$ layer containing dissolved ions of Al, Mg, Si, and Fe formed. Silicon ions became mobile at $900^{\circ}C$. After oxidation at $900^{\circ}C$ for 50 h in air, a thin $SiO_2-rich$ layer formed underneath the thin $Cr_2O_3$ layer. The film displayed good oxidation resistance. The main factor that decreased the oxidation resistance of the film was the outward diffusion and subsequent oxidation of Fe at the sample surface, particularly along the coated sample edge.

• 마이크로전자및패키징학회지
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• 제10권3호
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• pp.89-98
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• 2003

반도체 소자의 배선용 재료로서 사용가능한 합금원소 Mg를 첨가한 Cu(Mg) 박막의 기계 및 전기적 특성 변화를 조사하였다. Cu(2.7at.%Mg) 박막은 열처리를 할 경우 Cu 박막에 비하여 표면거칠기는 약 1/10 정도로 줄고 $SiO_2$와의 접착력도 2배 이상 향상된 결과를 나타내었다. 또한 $300^{\circ}C$이상의 온도에서 10분 이상 열처리를 할 경우 급격한 저항감소를 보여주었는데 이는 Mg 원소의 확산으로 인해 표면 및 계면에서 Mg 산화물이 형성되고 내부에는 순수 Cu와 같이 되었기 때문이다. 경도 및 열응력에 대한 저항력도 Cu박막에 비해 우수한 것으로 나타났으며 열응력으로 인해 Cu 박막에 나타나던 표면 void가 Cu(Mg) 박막에서는 전혀 관찰되지 않았다. EM Test 결과 lifetime은 2.5MA/$cm^2$, $297^[\circ}C$에서 순수 Cu 라인보다 5배 이상 길고 BTS Test 결과 Capacitance-Voltage 그래프의 플랫 밴드 전압(V$_{F}$ )의 shift현상이 Cu에서는 나타났지만 Cu(Mg) 박막에서는 발생하지 않는 우수한 신뢰성을 보여주었다. 누설전류 측정을 통한 $SiO_2$의 파괴시간은 Cu에 비하여 약 3배 이상 길어 합금원소에 의한 확산방지 효과가 있음을 확인하였다.

• 한국전기전자재료학회논문지
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• 제25권10호
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• pp.811-816
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• 2012

The effect of co-sputtering condition on the structural properties of $Mg_xZn_{1-x}O$ thin films grown by RF magnetron co-sputtering system was investigated for manufacturing ZnO/MgZnO structure LED. $Mg_xZn_{1-x}O$ thin films were grown with ZnO and MgO target varying RF power. Structural properties were investigated by X-ray diffraction (XRD) and Energy dispersive spectroscopy (EDS). The ZnO thin films have sufficient crystallinity on the high RF power. As RF power of ZnO target increased, the contents of MgO in the $Mg_xZn_{1-x}O$ film decreased. LED was manufactured using ZnO/MgZnO multi-layer on p-GaN/$Al_2O_3$ substrate. Threshold voltage of multi-layer LED was appeared at 8 V, and it was luminesced at wave length of 550 nm.

• 한국표면공학회지
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• 제42권2호
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• pp.68-72
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• 2009

We report on the growth of $CuCrO_2$ films using pulsed laser deposition and their structural and electrical transport properties. $CuCrO_2$ thin films were doped with 5 at% Mg for p-type properties. Epitaxial films of $CuCr_{0.95}Mg_{0.05}O_2$ were grown on c-plane sapphire substrates. The effects of growth temperature and oxygen pressure on film properties were investigated. The main phase of delafossite $CuCr_{0.95}Mg_{0.05}O_2$ was appeared above the growth temperature of $600^{\circ}C$. The thin film grown at $500^{\circ}C$ showed the highest conductivity, reaching 19.6 S/cm while higher growth temperatures over $500^{\circ}C$ led to lower conductivity; the thin film grown at $700^{\circ}C$ showed 0.02 S/cm.

• 한국표면공학회지
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• 제55권1호
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• pp.24-31
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• 2022

This study investigated the effect of pre-treatment on the PEO film formation of AZ91 Mg alloy. The pre-treatment was conducted for 10 min at room temperature in 0.5 M oxalic acid (C₂H₂O₄) solution containing various ammonium fluoride (NH₄F) concentrations. The pre-treated AZ91 Mg specimens were anodized at 100 mA/cm² of 300 Hz AC for 2 min in 0.1 M NaOH + 0.4 M Na₂SiO₃ solution. When AZ91 Mg alloy was pretreated in 0.5 M oxalic acid with NH₄F concentration less than 0.3 M, continuous dissolution of the AZ91 Mg alloy occurred together with the formation of black smuts and arc initiation time for PEO film formation was very late. It was noticed that corrosion rate of the AZ91 Mg alloy became faster if small amount of NH₄F concentration, 0.1 M, is added. The fast corrosion is attributable to fast formation of porous fluoride together with porous oxides in the reaction products. On the other hand, when AZ91 Mg alloy was pretreated in 0.5 M oxalic acid with sufficient NH₄F more than 0.3 M, a thin and dense protective film was formed on the AZ91 Mg alloy surface which resulted in faster initiation of arcs and formation of PEO film.

• 한국초전도ㆍ저온공학회논문지
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• 제6권3호
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• pp.6-11
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• 2004

YBa$_2$Cu$_3$$O_{7-x}$ (YBCO) films were deposited on MgO(100) and SrTiO$_3$(100) single crystal substrates by cold-wall type MOCVD method using continuous source supplying system. Under the deposition temperature of 740∼76$0^{\circ}C$, c-axis oriented YBCO films were obtained. In case of the YBCO films deposited on MgO (100) single crystal substrate, the critical temperature (T$_{c}$) was under 81 K regardless of the deposition conditions, whereas T$_{c}$ of the YBCO films deposited on SrTiO$_3$(100) single crystal substrate was 83∼84 K. The critical current (I$_{c}$) of the YBCO film deposited on SrTiO$_3$(100) single crystal substrate for 30 min was 49 A/cm-width and the critical current density (J$_{c}$) was 0.82 MA/$\textrm{cm}^2$ to film thickness of 0.6 ${\mu}{\textrm}{m}$. I$_{c}$ increased to 84.4 A/cm-width as the deposition time increased to 50 min, but J$_{c}$ decreased to 0.53 MA/$\textrm{cm}^2$ to film thickness of 1.8 ${\mu}{\textrm}{m}$.rm}{m}$.

• 한국재료학회지
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• 제17권7호
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• pp.386-389
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• 2007

The dielectric properties of $(Ba_{0.5}Sr_{0.5})TiO_3$ ferroelectric thin films have been investigated according to the substrates in order to optimize the their properties. MgO, r-plane sapphire, and poly-crystalline sapphire (Alumina) substrates have been used to deposite $(Ba_{0.5}Sr_{0.5})TiO_3$ ferroelectric thin films by RF magnetron sputtering. The BST thin films deposited on the single crystal (100)MgO substrates have high tunability and low dielectric loss. These results are caused by a low misfit between the lattice parameters of the BST films and the substrate. The BST films deposited on r-plane sapphire have relatively high misfit, and the tunability of 17% and dielectric loss of 0.0007. To improve the dielectric properties of the BST films, the post-annealing methods has been introduced. The BST films deposited on (100)MgO, (1102)r-plane sapphire, and poly-crystalline sapphire substrates have best properties in post-annealing conditions of $1050^{\circ}C$, $1100^{\circ}C$, and $1150^{\circ}C$, respectively. The different optimal post-annealing conditions have been found according to the different misfits between the films and substrates, and thermal expansion coefficients. Moreover, the films deposited on alumina substrate which is relatively cheap have a good tunability properties of 23% by the post-annealing.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2000년도 하계학술대회 논문집 C
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• pp.2032-2034
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• 2000

The performance of ac plasma display panels (PDP) is influenced strongly by the surface glow discharge characteristics on the MgO thin films. This paper deals with the surface slew discharge characteristics and some physical properties of MgO thin films prepared by reactive RF planar unbalanced magnetron sputtering in connection with ac PDP. The samples prepared with the do bias voltage of -10V showed lower discharge voltage and lower erosion rate by ion bombardment than those samples prepared by conventional magnetron sputtering or E-beam evaporation. The main factor that improves the discharge characteristics by bias voltage is considered to be due to the morphology changes or crystal structure of the MgO thin film by ion bombardment during deposition process.

• 한국전기전자재료학회논문지
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• 제21권5호
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• pp.468-473
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• 2008

A MgO layer is used as electrode protective film in the alternating current plasma display panel (AC PDP). The properties of MgO layer are thought to be one of the most important factors that affects the panel reliability through the firing voltage variation. In this study, we investigated the relations between the surface characteristics and e-beam evaporation process parameters such as deposition rate, temperature of substrate and distance between the MgO pellet and substrate. To produce the MgO layer of (200) crystal orientation, we suggest the high temperature of the substrate, the long distance between the pellet and substrate and the high deposition rate.