Effect of Bias Voltage on the Micro Discharge Characteristic of MgO Thin Film Prepared by Unbalanced Magnetron Sputtering

불평형 마그네트론 스파터링에 의해 형성된 MgO 박막의 micro 방전에 미치는 bias 전압의 영향에 관한 연구

  • Kim, Young-Kee (Dept. of Electrical Engineering, Pusan National University) ;
  • Kim, In-Sung (Dept. of Electrical Engineering, Pusan National University) ;
  • Jeong, Joo-Young (Dept. of Electrical Engineering, Pusan National University) ;
  • Cho, Jung-Soo (Dept. of Electrical Engineering, Pusan National University) ;
  • Park, Chung-Hoo (Dept. of Electrical Engineering, Pusan National University)
  • Published : 2000.07.17

Abstract

The performance of ac plasma display panels (PDP) is influenced strongly by the surface glow discharge characteristics on the MgO thin films. This paper deals with the surface slew discharge characteristics and some physical properties of MgO thin films prepared by reactive RF planar unbalanced magnetron sputtering in connection with ac PDP. The samples prepared with the do bias voltage of -10V showed lower discharge voltage and lower erosion rate by ion bombardment than those samples prepared by conventional magnetron sputtering or E-beam evaporation. The main factor that improves the discharge characteristics by bias voltage is considered to be due to the morphology changes or crystal structure of the MgO thin film by ion bombardment during deposition process.

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