Journal of the Korean institute of surface engineering (한국표면공학회지)

The Korean Institute of Surface Engineering (한국표면공학회)
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Growth of Mg Doped CuCrO2 by Pulsed Laser Deposition

PLD법에 의한 Mg가 첨가된 CuCrO2 박막 성장

  • Kim, Se-Yun (School of Materials Science and Engineering, Kyungpook National University) ;
  • Lee, Jong-Chul (School of Materials Science and Engineering, Kyungpook National University) ;
  • Choi, Im-Sic (School of Materials Science and Engineering, Kyungpook National University) ;
  • Lee, Joon-Hyung (School of Materials Science and Engineering, Kyungpook National University) ;
  • Kim, Jeong-Joo (School of Materials Science and Engineering, Kyungpook National University) ;
  • Heo, Young-Woo (School of Materials Science and Engineering, Kyungpook National University)
  • 김세윤 (경북대학교 신소재공학부) ;
  • 이종철 (경북대학교 신소재공학부) ;
  • 최임식 (경북대학교 신소재공학부) ;
  • 이준형 (경북대학교 신소재공학부) ;
  • 김정주 (경북대학교 신소재공학부) ;
  • 허영우 (경북대학교 신소재공학부)
  • Published : 2009.04.30
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Abstract

We report on the growth of $CuCrO_2$ films using pulsed laser deposition and their structural and electrical transport properties. $CuCrO_2$ thin films were doped with 5 at% Mg for p-type properties. Epitaxial films of $CuCr_{0.95}Mg_{0.05}O_2$ were grown on c-plane sapphire substrates. The effects of growth temperature and oxygen pressure on film properties were investigated. The main phase of delafossite $CuCr_{0.95}Mg_{0.05}O_2$ was appeared above the growth temperature of $600^{\circ}C$. The thin film grown at $500^{\circ}C$ showed the highest conductivity, reaching 19.6 S/cm while higher growth temperatures over $500^{\circ}C$ led to lower conductivity; the thin film grown at $700^{\circ}C$ showed 0.02 S/cm.

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