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http://dx.doi.org/10.5695/JKISE.2009.42.2.068

Growth of Mg Doped CuCrO2 by Pulsed Laser Deposition  

Kim, Se-Yun (School of Materials Science and Engineering, Kyungpook National University)
Lee, Jong-Chul (School of Materials Science and Engineering, Kyungpook National University)
Choi, Im-Sic (School of Materials Science and Engineering, Kyungpook National University)
Lee, Joon-Hyung (School of Materials Science and Engineering, Kyungpook National University)
Kim, Jeong-Joo (School of Materials Science and Engineering, Kyungpook National University)
Heo, Young-Woo (School of Materials Science and Engineering, Kyungpook National University)
Publication Information
Journal of the Korean institute of surface engineering / v.42, no.2, 2009 , pp. 68-72 More about this Journal
Abstract
We report on the growth of $CuCrO_2$ films using pulsed laser deposition and their structural and electrical transport properties. $CuCrO_2$ thin films were doped with 5 at% Mg for p-type properties. Epitaxial films of $CuCr_{0.95}Mg_{0.05}O_2$ were grown on c-plane sapphire substrates. The effects of growth temperature and oxygen pressure on film properties were investigated. The main phase of delafossite $CuCr_{0.95}Mg_{0.05}O_2$ was appeared above the growth temperature of $600^{\circ}C$. The thin film grown at $500^{\circ}C$ showed the highest conductivity, reaching 19.6 S/cm while higher growth temperatures over $500^{\circ}C$ led to lower conductivity; the thin film grown at $700^{\circ}C$ showed 0.02 S/cm.
Keywords
$CuCrO_2$; Delafossite; PLD;
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