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Deposition condition of YBCO films by continuous source supplying MOCVD method  

Kim Ho-Jin (성균관대 신소재공학과 & 원자력연구소)
Joo Jin-ho (성균관대 신소재공학과)
Choi Jun-Kyu (한국원자력연구소 원자력재료기술개발부)
Jun Byung-Hyuk (한국원자력연구소 원자력재료기술개발부)
Kim Chan-Joong (한국원자력연구소 원자력재료기술개발부)
Publication Information
Progress in Superconductivity and Cryogenics / v.6, no.3, 2004 , pp. 6-11 More about this Journal
Abstract
YBa$_2$Cu$_3$$O_{7-x}$ (YBCO) films were deposited on MgO(100) and SrTiO$_3$(100) single crystal substrates by cold-wall type MOCVD method using continuous source supplying system. Under the deposition temperature of 740∼76$0^{\circ}C$, c-axis oriented YBCO films were obtained. In case of the YBCO films deposited on MgO (100) single crystal substrate, the critical temperature (T$_{c}$) was under 81 K regardless of the deposition conditions, whereas T$_{c}$ of the YBCO films deposited on SrTiO$_3$(100) single crystal substrate was 83∼84 K. The critical current (I$_{c}$) of the YBCO film deposited on SrTiO$_3$(100) single crystal substrate for 30 min was 49 A/cm-width and the critical current density (J$_{c}$) was 0.82 MA/$\textrm{cm}^2$ to film thickness of 0.6 ${\mu}{\textrm}{m}$. I$_{c}$ increased to 84.4 A/cm-width as the deposition time increased to 50 min, but J$_{c}$ decreased to 0.53 MA/$\textrm{cm}^2$ to film thickness of 1.8 ${\mu}{\textrm}{m}$.rm}{m}$.
Keywords
MOCVD; YBCO film; critical current; critical current density; critical temperature;
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