• ETRI Journal
• /
• 제42권5호
• /
• pp.781-789
• /
• 2020

In this study, an E-band low-noise amplifier (LNA) monolithic microwave integrated circuit (MMIC) has been designed using silicon-germanium 130-nm bipolar complementary metal-oxide-semiconductor technology to suppress unwanted signal gain outside operating frequencies and improve the signal gain and noise figures at operating frequencies. The proposed impedance-controllable filter has series (R_s) and parallel (R_p) resistors instead of a conventional inductor-capacitor (L-C) filter without any resistor in an interstage matching circuit. Using the impedance-controllable filter instead of the conventional L-C filter, the unwanted high signal gains of the designed E-band LNA at frequencies of 54 GHz to 57 GHz are suppressed by 8 dB to 12 dB from 24 dB to 26 dB to 12 dB to 18 dB. The small-signal gain S₂₁ at the operating frequencies of 70 GHz to 95 GHz are only decreased by 1.4 dB to 2.4 dB from 21.6 dB to 25.4 dB to 19.2 dB to 24.0 dB. The fabricated E-band LNA MMIC with the proposed filter has a measured S₂₁ of 16 dB to 21 dB, input matching (S₁₁) of -14 dB to -5 dB, and output matching (S₂₂) of -19 dB to -4 dB at E-band operating frequencies of 70 GHz to 95 GHz.

• Journal of IKEEE
• /
• 제20권3호
• /
• pp.260-264
• /
• 2016

The MAX77846, which is compatible with MAX77826, is a sub-power management IC (PMIC) for the latest Wearable Watch and 3G/4G smart phones. The MAX77846 contains N-MOSFET (N channel Metal-Oxide Semiconductor Field-Effect Transistor), a high-efficiency regulator, and comparator, etc to power up peripherals. The MAX77846 also provides power on/off control logic for complete flexibility and an $I^2C$ (Inter Integrated Circuit) serial interface to program individual regulator output voltages. In this paper, the simplified power macro-model based on MAX77846 is designed to verify the performance of the battery voltage in terms of current and time, and simulated by using of the LTspice. In addition, it is verified how much time can the charged battery capacity for Samsung Galaxy Gear 2 be used to operate a specified function after measuring the currents flowing to carry out the main functions in real time, which will be applicable to design parameters for the advanced power module

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• 제31권6호
• /
• pp.377-385
• /
• 2018

For the investigation of dopant profiles in implanted $Si_{1-x}Ge_x$, the implanted B and As profiles are measured using SIMS (secondary ion mass spectrometry). The fundamental ion-solid interactions of implantation in $Si_{1-x}Ge_x$ are discussed and explained using SRIM, UT-marlowe, and T-dyn programs. The annealed simulation profiles are also analyzed and compared with experimental data. In comparison with the SIMS data, the boron simulation results show 8% deviations of $R_p$ and 1.8% deviations of ${\Delta}R_p$ owing to relatively small lattice strain and relaxation on the sample surface. In comparison with the SIMS data, the simulation results show 4.7% deviations of $R_p$ and 8.1% deviations of ${\Delta}R_p$ in the arsenic implanted $Si_{0.2}Ge_{0.8}$ layer and 8.5% deviations of $R_p$ and 38% deviations of ${\Delta}R_p$ in the $Si_{0.5}Ge_{0.5}$ layer. An analytical method for obtaining the dopant profile is proposed and also compared with experimental and simulation data herein. For the high-speed CMOSFET (complementary metal oxide semiconductor field effect transistor) and HBT (heterojunction bipolar transistor), the study of dopant profiles in the $Si_{1-x}Ge_x$ layer becomes more important for accurate device scaling and fabrication technologies.

• Journal of the Korea Institute of Information and Communication Engineering
• /
• 제11권2호
• /
• pp.322-329
• /
• 2007

A single pixel photon counting type image sensor which is applicable for medical diagnosis with digitally obtained image and industrial purpose has been designed with $0.18{\mu}m$ triple-well CMOS process. The designed single pixel for readout chip is able to be operated by single supply voltage to simplify digital X-ray image sensor module and a preamplifier which is consist of folded cascode CMOS operational amplifier has been designed to enlarge signal voltage(${\Delta}Vs$), the output voltage of preamplifier. And an externally tunable threshold voltage generator circuit which generates threshold voltage in the readout chip has been newly proposed against the conventional external threshold voltage supply. In addition, A dark current compensation circuit for reducing dark current noise from photo diode is proposed and 15bit LFSR(Linear Feedback Shift Resister) Counter which is able to have high counting frequency and small layout area is designed.

• Journal of the Korea Institute of Information and Communication Engineering
• /
• 제11권2호
• /
• pp.330-336
• /
• 2007

A single pixel photon counting type image sensor which is applicable for medical diagnosis with digitally obtained image and industrial purpose has tern designed with $0.18{\mu}m$ triple-well CMOS process. The designed single pixel for readout chip is able to be operated by single supply voltage to simplify digital X-ray image sensor module and a preamplifier which is consist of folded cascode CMOS operational amplifier has been designed to enlarge signal voltage(${\Delta}Vs$), the output voltage of preamplifier. And an externally tunable threshold voltage generator circuit which generates threshold voltage in the readout chip has been newly proposed against the conventional external threshold voltage supply. In addition, A dark current compensation circuit for reducing dark current noise from photo diode is proposed and 15bit LFSR(Linear Feedback Shift Resister) Counter which is able to have high counting frequency and small layout area is designed.

• Journal of Sensor Science and Technology
• /
• 제30권5호
• /
• pp.309-313
• /
• 2021

Organic semiconductors have received tremendous attention for their research because of their tunable electrical and optical properties that can be achieved by changing their molecular structure. However, organic materials are inherently unstable in the presence of oxygen and moisture. Therefore, it is necessary to develop moisture and air stable semiconducting materials that can replace conventional organic semiconductors. In this study, we developed a NiO_x thin film through a solution process. The electrical characteristics of the NiO_x thin film, depending on the thermal annealing temperature and UV-ozone treatment, were determined by applying them to the hole injection layer of an organic light-emitting diode. A high annealing temperature of 500 ℃ and UV-ozone treatment enhanced the conductivity of the NiO_x thin films. The optimized NiO_x exhibited beneficial hole injection properties comparable those of 1,4,5,8,9,11-hexaazatriphenylene hexacarbonitrile (HAT-CN), a conventional organic hole injection layer. As a result, both devices exhibited similar power efficiencies and the comparable electroluminescent spectra. We believe that NiO_x could be a potential solution which can provide robustness to conventional organic semiconductors.

• Journal of Convergence for Information Technology
• /
• 제11권7호
• /
• pp.104-110
• /
• 2021

A novel selective oxidation process has been developed for low source/drain (S/D) series resistance of the fin channel metal oxide semiconductor field effect transistor (MOSFET). Using this technique, the selective oxidation fin-channel MOSFET (SoxFET) has the gate-all-around structure and gradually enhanced S/D extension regions. The SoxFET demonstrated over 70% reduction in S/D series resistance compared to the control device. Moreover, it was found that the SoxFET behaved better in performance, not only a higher drive current but also higher transconductances with suppressing subthreshold swing and drain induced barrier lowering (DIBL) characteristics, than the control device. The saturation current, threshold voltage, peak linear transconductance, peak saturation transconductance, subthreshold swing, and DIBL for the fabricated SoxFET are 305 ㎂/㎛, 0.33 V, 13.5 𝜇S, 76.4 𝜇S, 78 mV/dec, and 62 mV/V, respectively.

• Journal of Environmental Science International
• /
• 제27권11호
• /
• pp.967-974
• /
• 2018

In this study, we evaluated the photocatalytic oxidation efficiency of aromatic volatile hydrocarbons by using $WO_3$-doped $TiO_2$ nanotubes (WTNTs) under visible-light irradiation. One-dimensional WTNTs were synthesized by ultrasonic-assisted hydrothermal method and impregnation. XRD analysis revealed successful incorporation of $WO_3$ into $TiO_2$ nanotube (TNT) structures. UV-Vis spectra exhibited that the synthesized WTNT samples can be activated under visible light irradiation. FE-SEM and TEM images showed the one-dimensional structure of the prepared TNTs and WTNTs. The photocatalytic oxidation efficiencies of toluene, ethylbenzene, and o-xylene were higher using WTNT samples than undoped TNT. These results were explained based on the charge separation ability, adsorption capability, and light absorption of the sample photocatalysts. Among the different light sources, light-emitting-diodes (LEDs) are more highly energy-efficient than 8-W daylight used for the photocatalytic oxidation of toluene, ethylbenzene, and o-xylene, though the photocatalytic oxidation efficiency is higher for 8-W daylight.

• Korean Journal of Environmental Agriculture
• /
• 제39권4호
• /
• pp.319-326
• /
• 2020

BACKGROUND: Measurement equipment was developed for inorganic nutrient concentration inside the hydroponic culture medium with several macro- and micro compositions, and applied for measuring the compositions of conventional medium. METHODS AND RESULTS: Before the equipment development, sonicator and heater were utilized to control temperature around of the module mixing with color reagents and target samples among the inorganic compositions. The measurement module and multi-sampler were also manufactured based on the COMS (Complementary Metal-Oxide Semiconductor) and installed inside the measurement equipment. Concentration of standard solution, value measured by the equipment, standard deviation or measured average value were used for estimating the accuracy and average recall of the equipment. Yamazaki solutions with EC of 0.5, 1.5, and 2.5 dS/m were offered to confirm the equipment accuracy and standard error. CONCLUSION: It was suggested that the developed equipment could be automatically applied for measurement with accuracy of over 96% and standard errors of less than 5% on 12 macro- and micro compositions such as a NO3-N, PO43- or Fe.

• Imaging Science in Dentistry
• /
• 제50권4호
• /
• pp.339-346
• /
• 2020

Purpose: The purpose of this study was to evaluate the image quality, diagnostic efficacy, and radiation dose associated with the use of a cadmium telluride (CdTe) detector, compared to charge-coupled device (CCD) and complementary metal oxide semiconductor(CMOS) detectors. Materials and Methods: Lateral cephalographs of a phantom (type 1) composed of synthetic polymer filled with water and another phantom (type 2) composed of human skull macerated with polymer coating were obtained with CdTe, CCD, and CMOS detectors. Dosimeters placed on the type 2 phantom were used to measure radiation. Noise levels from each image were also measured. McNamara cephalometric analysis was conducted, the dentoskeletal configurations were assessed, and a subjective evaluation of image quality was conducted. Parametric data were compared via 1-way analysis of variance with the Tukey post-hoc test, with a significance level of 5%. Subjective image quality and dentoskeletal configuration were described qualitatively. Results: A statistically significant difference was found among the images obtained with the 3 detectors(P<0.05), with the lowest noise level observed among the images obtained with the CdTe detector and a higher subjective preference demonstrated for those images. For the cephalometric analyses, no significant difference (P>0.05) was observed, and perfect agreement was seen with regard to the classifications obtained from the images acquired using the 3 detectors. The radiation dose associated with the CMOS detector was higher than the doses associated with the CCD (P<0.05) and CdTe detectors(P<0.05). Conclusion: Considering the evaluated parameters, the CdTe detector is recommended for use in clinical practice.