• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2001년도 하계학술대회 논문집
• /
• pp.832-835
• /
• 2001

We report the structural and electrical properties of hafnium oxide (HfO$_2$) films with tungsten silicide (WSi$_2$) metal gate. In this study, HfO$_2$thin films were fabricated by oxidation of sputtered Hf metal films on Si, and WSi$_2$was deposited directly on HfO$_2$by LPCVD. The hysteresis windows in C-V curves of the WSi$_2$HfO$_2$/Si MOS capacitors were negligible (<20 mV), and had no dependence on frequency from 10 kHz to 1 MHz and bias ramp rate from 10 mV to 1 V. In addition, leakage current was very low in the range of 10$^{-9}$ ~10$^{-10}$ A to ~ 1 V, which was due to the formation of interfacial hafnium silicate layer between HfO$_2$and Si. After PMA (post metallization annealing) of the WSi$_2$/HfO$_2$/Si MOS capacitors at 500 $^{\circ}C$ EOT (equivalent oxide thickness) was reduced from 26 to 22 $\AA$ and the leakage current was reduced by approximately one order as compared to that measured before annealing. These results indicate that the effect of fluorine diffusion is negligible and annealing minimizes the etching damage.

• Applied Science and Convergence Technology
• /
• 제26권2호
• /
• pp.21-25
• /
• 2017

The shape of the reflection spectrum is complex and appears to overlap with several signals, because the surface state is uneven due to the natural oxide film, so that the spectrum becomes a complicated signal shape divided into regions 1 and 2 due to diffuse reflection. On the other hand, it is seen that the reflection spectrum after PEO surface treatment is overlapped with several signals. In addition, the reflectance of the energy band varies from 1.32 to 1.46 eV. Usually, the MgO-type oxide film was observed at an energy band of ~4.2 eV. The thickness of the oxide film was increased as the DC voltage was increased by the thin film thickness meter (QuaNix; 7500M) after Plasma Electrolytic Oxidation (; PEO) surface treatment. This is because the higher the DC voltage, the easier the binding of the $OH^-$ ions in the solution solution and the $Mg^+$ ions of the magnesium alloy. An important part of the bonding of ordinary ions is the energy source (plasma) which can promote bonding. However, when a certain threshold voltage or more is applied, the material is adversely affected. The oxide film of the surface may be destroyed without increasing the thickness of the oxide film, that is, whitening of the material may occur.

• JSTS:Journal of Semiconductor Technology and Science
• /
• 제1권1호
• /
• pp.20-30
• /
• 2001

A 1.8V $650{\;}\textrm{mm}^2$ 4Gb DRAM having $0.10{\;}\mu\textrm{m}^2$ cell size has been successfully developed using 0.11 $\mu\textrm{m}$DRAM technology. Considering manufactur-ability, we have focused on developing patterning technology using KrF lithography that makes $0.11{\;}\mu\textrm{m}$ DRAM technology possible. Furthermore, we developed novel DRAM technologies, which will have strong influence on the future DRAM integration. These are novel oxide gap-filling, W-bit line with stud contact for borderless metal contact, line-type storage node self-aligned contact (SAC), mechanically stable metal-insulator-silicon (MIS) capacitor and CVD Al process for metal inter-connections. In addition, 80 nm array transistor and sub-80 nm memory cell contact are also developed for high functional yield as well as chip performance. Many issues which large sized chip often faces are solved by novel design approaches such as skew minimizing technique, gain control pre-sensing scheme and bit line calibration scheme.

• 대한치과기공학회지
• /
• 제21권1호
• /
• pp.15-26
• /
• 1999

This study was carried out by observing to composition of oxide on the surface of dental porcelain low gold alloy with various Indium additions according to the degassing and analysing the change composition of additional elements In on diffusion behaviors of Porcelain-matal surface. The specimens used were Au-Pd-Ag alloys by small indium addition. These specimens were treated for 10min at $1000^{\circ}C$ in vacuum condition. To investigate the microsturcture of oxidized alloy surface, SEM and EDAX were used, and EPMA were used to investigate the diffusion behaviors of porcelain-metal surface. X-ray diffraction were used to observe the morphological changes in the oxidation zone. The results of this study were obtained as follows ; 1) The hardness of alloy increased with increasing amount of In addition. 2) The formation of oxidation increased with increasing In content after heat treatment. 3) Diffusion of indium elements increased with increasing In content in metal-porcelain surface after firing. 4) The oxidations of alloy surface were mainly $In_2O_3$.

• Advances in nano research
• /
• 제3권4호
• /
• pp.243-255
• /
• 2015

In this investigation, ecotoxicity of nano and micro metal oxides, namely silica ($SiO_2$) and alumina ($Al_2O_3$), on the growth of green algae (Porphyridium aerugineum Geitler) is discussed. Effects of nano and micro particles on the growth, chlorophyll content and protein content of algae are analysed using standard protocols. Results indicate that $SiO_2$ nano and micro $SiO_2$ particles are non-toxic to P. aerugineum Geitler up to a concentration of 1000 mg/L. In addition, $Al_2O_3$ microparticles are less toxic to P. aerugineum Geitler, whereas $Al_2O_3$ nanoparticles are found to be highly toxic at 1000 mg/L. Moreover, $Al_2O_3$ nanoparticles decrease the growth, chlorophyll content, and protein content of tested algae. In addition, zeta potential and contact angle are also important in enhancing the toxicity of metal oxide nanoparticles in aquatic environment. This study highlights a new insight into toxicity evaluation of nanoparticles on beneficial aquatic organisms such as algae.

• 청정기술
• /
• 제20권1호
• /
• pp.7-12
• /
• 2014

이원계 및 삼원계 금속산화물 촉매에서 프로필렌 글리콜의 글리세롤의 전환반응을 행하였다. Cu/Zn 및 Cu/Cr 혼합산화물 촉매에서는 단일 금속 산화물에 비해 글리세롤의 전환율과 프로필렌 글리콜의 선택도가 증가하였다. 또한, Cu/Zn 촉매에 Al이 첨가된 혼합산화물 촉매에서는 글리세롤의 전환율과 프로필렌 글리콜의 선택도가 매우 크게 증가하였다. 반응온도가 증가함에 따라 글리세롤의 전환율은 점차 증가하지만 프로필렌 글리콜의 선택도는 $200^{\circ}C$에서 최대값을 보이다가 $250^{\circ}C$에서는 오히려 감소하였다. 글리세롤의 농도가 커질수록 글리세롤의 전환율과 프로필렌 글리콜의 선택도가 감소하였다.

• 공업화학
• /
• 제9권5호
• /
• pp.749-753
• /
• 1998

고급지방산 메틸에스테르의 일종인 dodecanoic acid methyl ester (DME)에 금속 산화물인 고체촉매 (W-7)를 이용하여 고온, 고압하에서 ethyleneoxide (EO)를 5, 7, 9, 및 12 몰씩 부가반응시켜 얻은 비이온성 계면활성제인 methoxy polyoxy ethylene dodecanoate (MPD)류 4종을 높은 수율 (93~97%)로 합성하여 얻었다. DME는 구조적으로 활성수소가 없어서 일반적인 산, 알칼리 촉매에서는 반응이 어렵고 활성고체촉매를 사용해야 EO의 단위 몰수를 부가 시킬 수 있었다. 최종 생성물에 대한 것을 IR, HPLC 및 $^1H$ NMR를 이용하여 각각의 화합물에 대한 구조를 확인하였다. 이 결과 EO의 부가 몰수는 5.2, 7.1, 9.2 및 12.1 몰이었고, 각 몰의 평균 EO 분포는 polyoxyethylene alkyl ether (AE)처럼 정규분포 곡선을 나타내었다.

• 전기전자학회논문지
• /
• 제27권4호
• /
• pp.567-572
• /
• 2023

본 논문에서는 Partial isolation lateral double diffused metal oxide semiconductor(Pi-LDMOS)의 항복전압에 대해 시뮬레이션을 통해 분석하였다. 항복전압 변화는 Partial buried oxide(P-BOX)의 다양한 파라미터(길이, 두께, 위치)에 따라 조사되었고, 그 메커니즘에 대해 명기하였다. 또한 항복전압과 trade-off 관계에 있는 온저항의 변화를 P-BOX 파라미터 변화에 따라 분석하였고 Figure of merit(FOM)을 계산하여 비교하였다. 제안된 구조에서 L_box=5㎛, t_box=2㎛, L_bc=2㎛일 경우 138V의 가장 높은 항복전압을 나타내었고, L_box=5㎛, t_box=1.6㎛, L_bc=2㎛일 경우 가장 높은 FOM을 나타내었다. 이는 conventional LDMOS 대비 항복전압은 123%, FOM은 3.89배 향상된 수치이다. 따라서 Pi-LDMOS는 높은 항복전압과 FOM을 가져 Power IC의 안정적인 동작범위 향상에 기여할 수 있다.

• 동의생리병리학회지
• /
• 제21권1호
• /
• pp.165-170
• /
• 2007

Pyungwi-san(PWS) have been using as a basic prescription of digestive disorder in Korean traditional medicine. This study was performed to examine the in vitro antioxidant activity of the extract using different antioxidant tests including by 1,1-diphenyl-2-picryl-hydrazil (DPPH) radical scavenging, superoxide anion radical scavenging, metal chelating hydrogen peroxide scavenging, lipid peroxydation protective effect and scavenging effect of nitric oxide and peroxynitrite. Herbal-acupuncture solution of PWS(PWS-HS) exhibited a concentration-dependent inhibition of DPPH radical adduct formation and it showed dose-dependent free radical scavenging activity onto superoxide anions. In addition, the result of metal chelating hydrogen peroxide scavenging and ammonium thiocyanate experiments showed that PWS-HS was an active scavenger of hydroxyl radicals. Furthermore, it was also found to be effective in scavenging nitric oxide and peroxynitrite, well-known cytotoxic species that can oxidize several cellular components such as proteins, lipids and DNA.

• 전기전자학회논문지
• /
• 제20권2호
• /
• pp.163-166
• /
• 2016

It is important to operate the driving circuit under the optimal condition through precisely sensing the power consumption causing the temperature made mainly by the MOSFET (metal-oxide semiconductor field-effect transistor) when a BLDC (Brushless Direct Current) motor operates. In this letter, a Super-junction (SJ) power TMOSFET (trench metal-oxide semiconductor field-effect transistor) with an ultra-low specific on-resistance of $0.96m{\Omega}{\cdot}cm^2$ under the same break down voltage of 100 V is designed by using of the SILVACO TCAD 2D device simulator, Atlas, while the specific on-resistance of the traditional power MOSFET has tens of $m{\Omega}{\cdot}cm^2$, which makes the higher power consumption. The SPICE simulation for measuring the power distribution of 25 cells for a chip is carried out, in which a unit cell is a SJ Power TMOSFET with resistor arrays. In addition, the power consumption for each unit cell of SJ Power TMOSFET, considering the number, pattern and position of bonding, is computed and the power distribution for an ANSYS model is obtained, and the SJ Power TMOSFET is designed to make the power of the chip distributed uniformly to guarantee it's reliability.