• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.832-835
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• 2001

We report the structural and electrical properties of hafnium oxide (HfO$_2$) films with tungsten silicide (WSi$_2$) metal gate. In this study, HfO$_2$thin films were fabricated by oxidation of sputtered Hf metal films on Si, and WSi$_2$was deposited directly on HfO$_2$by LPCVD. The hysteresis windows in C-V curves of the WSi$_2$HfO$_2$/Si MOS capacitors were negligible (<20 mV), and had no dependence on frequency from 10 kHz to 1 MHz and bias ramp rate from 10 mV to 1 V. In addition, leakage current was very low in the range of 10$^{-9}$ ~10$^{-10}$ A to ~ 1 V, which was due to the formation of interfacial hafnium silicate layer between HfO$_2$and Si. After PMA (post metallization annealing) of the WSi$_2$/HfO$_2$/Si MOS capacitors at 500 $^{\circ}C$ EOT (equivalent oxide thickness) was reduced from 26 to 22 $\AA$ and the leakage current was reduced by approximately one order as compared to that measured before annealing. These results indicate that the effect of fluorine diffusion is negligible and annealing minimizes the etching damage.

• Applied Science and Convergence Technology
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• v.26 no.2
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• pp.21-25
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• 2017

The shape of the reflection spectrum is complex and appears to overlap with several signals, because the surface state is uneven due to the natural oxide film, so that the spectrum becomes a complicated signal shape divided into regions 1 and 2 due to diffuse reflection. On the other hand, it is seen that the reflection spectrum after PEO surface treatment is overlapped with several signals. In addition, the reflectance of the energy band varies from 1.32 to 1.46 eV. Usually, the MgO-type oxide film was observed at an energy band of ~4.2 eV. The thickness of the oxide film was increased as the DC voltage was increased by the thin film thickness meter (QuaNix; 7500M) after Plasma Electrolytic Oxidation (; PEO) surface treatment. This is because the higher the DC voltage, the easier the binding of the $OH^-$ ions in the solution solution and the $Mg^+$ ions of the magnesium alloy. An important part of the bonding of ordinary ions is the energy source (plasma) which can promote bonding. However, when a certain threshold voltage or more is applied, the material is adversely affected. The oxide film of the surface may be destroyed without increasing the thickness of the oxide film, that is, whitening of the material may occur.

• JSTS:Journal of Semiconductor Technology and Science
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• v.1 no.1
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• pp.20-30
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• 2001

A 1.8V $650{\;}\textrm{mm}^2$ 4Gb DRAM having $0.10{\;}\mu\textrm{m}^2$ cell size has been successfully developed using 0.11 $\mu\textrm{m}$DRAM technology. Considering manufactur-ability, we have focused on developing patterning technology using KrF lithography that makes $0.11{\;}\mu\textrm{m}$ DRAM technology possible. Furthermore, we developed novel DRAM technologies, which will have strong influence on the future DRAM integration. These are novel oxide gap-filling, W-bit line with stud contact for borderless metal contact, line-type storage node self-aligned contact (SAC), mechanically stable metal-insulator-silicon (MIS) capacitor and CVD Al process for metal inter-connections. In addition, 80 nm array transistor and sub-80 nm memory cell contact are also developed for high functional yield as well as chip performance. Many issues which large sized chip often faces are solved by novel design approaches such as skew minimizing technique, gain control pre-sensing scheme and bit line calibration scheme.

• Journal of Technologic Dentistry
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• v.21 no.1
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• pp.15-26
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• 1999

This study was carried out by observing to composition of oxide on the surface of dental porcelain low gold alloy with various Indium additions according to the degassing and analysing the change composition of additional elements In on diffusion behaviors of Porcelain-matal surface. The specimens used were Au-Pd-Ag alloys by small indium addition. These specimens were treated for 10min at $1000^{\circ}C$ in vacuum condition. To investigate the microsturcture of oxidized alloy surface, SEM and EDAX were used, and EPMA were used to investigate the diffusion behaviors of porcelain-metal surface. X-ray diffraction were used to observe the morphological changes in the oxidation zone. The results of this study were obtained as follows ; 1) The hardness of alloy increased with increasing amount of In addition. 2) The formation of oxidation increased with increasing In content after heat treatment. 3) Diffusion of indium elements increased with increasing In content in metal-porcelain surface after firing. 4) The oxidations of alloy surface were mainly $In_2O_3$.

• Advances in nano research
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• v.3 no.4
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• pp.243-255
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• 2015

In this investigation, ecotoxicity of nano and micro metal oxides, namely silica ($SiO_2$) and alumina ($Al_2O_3$), on the growth of green algae (Porphyridium aerugineum Geitler) is discussed. Effects of nano and micro particles on the growth, chlorophyll content and protein content of algae are analysed using standard protocols. Results indicate that $SiO_2$ nano and micro $SiO_2$ particles are non-toxic to P. aerugineum Geitler up to a concentration of 1000 mg/L. In addition, $Al_2O_3$ microparticles are less toxic to P. aerugineum Geitler, whereas $Al_2O_3$ nanoparticles are found to be highly toxic at 1000 mg/L. Moreover, $Al_2O_3$ nanoparticles decrease the growth, chlorophyll content, and protein content of tested algae. In addition, zeta potential and contact angle are also important in enhancing the toxicity of metal oxide nanoparticles in aquatic environment. This study highlights a new insight into toxicity evaluation of nanoparticles on beneficial aquatic organisms such as algae.

• Clean Technology
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• v.20 no.1
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• pp.7-12
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• 2014

Hydrogenolysis of glycerol to propylene glycol was performed over binary and ternary metal oxide catalysts. The conversion of glycerol and selectivity to propylene glycol were increased on Cu/Zn and Cu/Cr mixed oxides compared to pure CuO and ZnO oxides. The addition of alumina into Cu/Zn mixed oxide very highly increased the conversion of glycerol and selectivity to propylene glycol. The conversion of glycerol was increased with increasing the reaction temperature but the selectivity to propylene glycol was shown to have maximum value at $200^{\circ}C$ and then decreased at $250^{\circ}C$. The conversion of glycerol and selectivity to propylene glycol were decreased with increasing the glycerol concentration.

• Applied Chemistry for Engineering
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• v.9 no.5
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• pp.749-753
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• 1998

Methoxy polyoxyethylene dodecanoates, kinds of nonionic surfactants, could be obtained from addition of ethylene oxide (5, 7, 9, and 12mol) with fatty acid methyl ester utilizing solid catalyst, metal oxide. Because ethylene oxide (EO) couldn't react directly in acid or alkali catalyst with dodecanoic acid methyl ester (DME) that had no active hydrogen, the reaction to add EO was carried out using active solid catalyst. By using IR, HPLC and $^1H$ NMR analysis, structural confirmation of methyl polyoxy ethylene dodecanate showed high yield ranging from 93 to 97%. EO unit mol number of reacted products was 5.2, 7.1, 9.2 and 12.1 mol respectively. Also, EO adduct distrobution of ethoxylated methyl laurate (MPD) had normal distribution curve like polyoxyethylene alkyl ether (AE).

• Journal of IKEEE
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• v.27 no.4
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• pp.567-572
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• 2023

In this paper, the breakdown voltage of Pi-LDMOS (Partial isolation lateral double diffused metal oxide semiconductor) was analyzed by simulation. Breakdown voltage variation is investigated under various settings of Parial buied oxide(P-BOX) parameters(length, thickness, location) and their mechanism is specified. In addition, the change in on-resistance in the breakdown voltage and trade-off relationship was analyzed according to the change in the P-BOX parameter, and the Figure-of-merit(FOM) was calculated and compared. In proposed structure, Lbox=5 ㎛, tbox=2 ㎛, and Lbc=2 ㎛ showed the highest breakdown voltage of 138V, and Lbox=5 ㎛, tbox=1.6 ㎛, and Lbc=2 ㎛ showed the highest FOM. Compared to conventional LDMOS, the breakdown voltage is 123% and FOM is 3.89 times improved. Therefore, Pi-LDMOS has a high breakdown voltage and FOM, which can contribute to the improvement of the stable operating range of the Power IC.

• Journal of Physiology & Pathology in Korean Medicine
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• v.21 no.1
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• pp.165-170
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• 2007

Pyungwi-san(PWS) have been using as a basic prescription of digestive disorder in Korean traditional medicine. This study was performed to examine the in vitro antioxidant activity of the extract using different antioxidant tests including by 1,1-diphenyl-2-picryl-hydrazil (DPPH) radical scavenging, superoxide anion radical scavenging, metal chelating hydrogen peroxide scavenging, lipid peroxydation protective effect and scavenging effect of nitric oxide and peroxynitrite. Herbal-acupuncture solution of PWS(PWS-HS) exhibited a concentration-dependent inhibition of DPPH radical adduct formation and it showed dose-dependent free radical scavenging activity onto superoxide anions. In addition, the result of metal chelating hydrogen peroxide scavenging and ammonium thiocyanate experiments showed that PWS-HS was an active scavenger of hydroxyl radicals. Furthermore, it was also found to be effective in scavenging nitric oxide and peroxynitrite, well-known cytotoxic species that can oxidize several cellular components such as proteins, lipids and DNA.

• Journal of IKEEE
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• v.20 no.2
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• pp.163-166
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• 2016

It is important to operate the driving circuit under the optimal condition through precisely sensing the power consumption causing the temperature made mainly by the MOSFET (metal-oxide semiconductor field-effect transistor) when a BLDC (Brushless Direct Current) motor operates. In this letter, a Super-junction (SJ) power TMOSFET (trench metal-oxide semiconductor field-effect transistor) with an ultra-low specific on-resistance of $0.96m{\Omega}{\cdot}cm^2$ under the same break down voltage of 100 V is designed by using of the SILVACO TCAD 2D device simulator, Atlas, while the specific on-resistance of the traditional power MOSFET has tens of $m{\Omega}{\cdot}cm^2$, which makes the higher power consumption. The SPICE simulation for measuring the power distribution of 25 cells for a chip is carried out, in which a unit cell is a SJ Power TMOSFET with resistor arrays. In addition, the power consumption for each unit cell of SJ Power TMOSFET, considering the number, pattern and position of bonding, is computed and the power distribution for an ANSYS model is obtained, and the SJ Power TMOSFET is designed to make the power of the chip distributed uniformly to guarantee it's reliability.