• Journal of the Institute of Electronics Engineers of Korea TC
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• v.43 no.4 s.346
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• pp.67-74
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• 2006

We present the design of a radiometer in W-band which operates simultaneously with a single antenna configured FMCW radar. We choose a total power radiometer(TPR) which shares an antenna and a front-end with the radar for miniaturizing the system. We separate the radiometer signal from the radar signal using a diplexer in IF band. Because the radiometer has an unwanted transmitter section due to the common use of the MMW front-end with the radar, some additional noise signals caused by the transmitter degrade the sensitivity of the radiometer system. To compensate the degradation of sensitivity, we use matching circuits and a diode detector configured as the voltage doubler. Through some experiments, we have verified that the designed radiometer system has good performances in detecting metal targets tying at several hundred meters.

• Journal of Electrical Engineering and information Science
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• v.3 no.2
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• pp.239-244
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• 1998

Piezoelectric pressure sensors and pyroelectric infrared detectors based on ZnO thin film have been integrated with GaAs metal-semiconductor field effect transistor (MESFET) amplifiers. Surface micromachining techniques have been applied in a GaAs MESFET process to form both microsensors and electronic circuits. The on-chip integration of microsensors such as pressure sensors and infrared detectors with GaAs integrated circuits is attractive because of the higher operating temperature up to 200 oC for GaAs devices compared to 125 oC for silicon devices and radiation hardness for infrared imaging applications. The microsensors incorporate a 1${\mu}$m-thick sputtered ZnO capacitor supported by a 2${\mu}$m-thick aluminum membrane formed on a semi-insulating GaAs substrate. The piezoelectric pressure sensor of an area 80${\times}$80 ${\mu}$m2 designed for use as a miniature microphone exhibits 2.99${\mu}$V/${\mu}$ bar sensitivity at 400Hz. The voltage responsivity and the detectivity of a single infrared detector of an area 80${\times}$80 $\mu\textrm{m}$2 is 700 V/W and 6${\times}$108cm$.$ Hz/W at 10Hz respectively, and the time constant of the sensor with the amplifying circuit is 53 ms. Circuits using 4${\mu}$m-gate GaAs MESFETs are fabricated in planar, direct ion-implanted process. The measured transconductance of a 4${\mu}$m-gate GaAs MESFET is 25.6 mS/mm and 12.4 mS/mm at 27 oC and 200oC, respectively. A differential amplifier whose voltage gain in 33.7 dB using 4${\mu}$m gate GaAs MESFETs is fabricated for high selectivity to the physical variable being sensed.

• 전자공학회논문지 IE
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• v.47 no.4
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• pp.1-9
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• 2010

This paper describes a ultrasonic signal processing front-end IC for distance range meter and body detector. The burst shaped ultrasonic signal is generated by a self oscillator and its frequency range is about 40[kHz]-300[kHz]. The generated ultrasonic signal transmit through piezo resonator. The another piezo device transduce from received ultrasonic signal to electrical signals. This front-end IC contained low noise amplifier, band pass filter, busrt detector and time pulse generator and so on. This IC has two type of new idea for improve function and performance, which are self frequency control (SFC) and Variable Gain Control amplifier (VGC) scheme. The dimensions and number of external parts are minimized in order to get a smaller hardware size. This device has been fabricated in a O.6[um] double poly, double metal 40[V] High Voltage CMOS process.

• Analytical Science and Technology
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• v.17 no.1
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• pp.8-15
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• 2004

The detection efficiencies of the several solid track detectors were investigated for the determination of boron content in aqueous solution by using the alpha muti-Radioisotope(RI) source. Polycarbonate (Lexan and CR-39) and cellulose nitrate (CN-85 and LR-115) were selected as materials for alpha track detection of boron. Alpha muti-RI source, uranium metal particles and boron standard solution were used for alpha emission. In this study, four solid track detectors(CN-85, LR-115, Lexan and CR-39) were characterized under various etching conditions as well as neutron irradiation conditions. As a result, the CN-85 was turned out to be best to provide good efficiency among the four detectors. The selected solid track detector was utilized for the determination of trace amount of boron in aqueous sample and its results were discussed in the text.

• Journal of Radiation Protection and Research
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• v.47 no.3
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• pp.152-157
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• 2022

Background: The hemi-body electron beam irradiation (HBIe^-) technique has been proposed for the treatment of mycosis fungoides. It spares healthy skin using an electron shield. However, shielding electrons is complicated owing to electron scattering effects. In this study, we developed a thimble-like head bolus shield that surrounds the patient's entire head to prevent irradiation of the head during HBIe^-. Materials and Methods: The feasibility of a thimble-like head bolus shield was evaluated using a simplified Geant4 Monte Carlo (MC) simulation. Subsequently, the head bolus was manufactured using a three-dimensional (3D) printed mold and Ecoflex 00-30 silicone. The fabricated head bolus was experimentally validated by measuring the dose to the Rando phantom using a metal-oxide-semiconductor field-effect transistor (MOSFET) detector with clinical configuration of HBIe^-. Results and Discussion: The thimble-like head bolus reduced the electron fluence by 2% compared with that without a shield in the MC simulations. In addition, an improvement in fluence degradation outside the head shield was observed. In the experimental validation using the inhouse-developed bolus shield, this head bolus reduced the electron dose to approximately 2.5% of the prescribed dose. Conclusion: A thimble-like head bolus shield for the HBIe^- technique was developed and validated in this study. This bolus effectively spares healthy skin without underdosage in the region of the target skin in HBIe^-.

• Progress in Medical Physics
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• v.21 no.3
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• pp.261-273
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• 2010

For the use of Indirect-conversion CMOS (complementary metal-oxide-semiconductor) detectors for digital x-ray radiography and their better designs, we have theoretically evaluated the spatial-frequency-dependent detective quantum efficiency (DQE) using the cascaded linear-systems transfer theory. In order to validate the developed model, the DQE was experimentally determined by the measured modulation-transfer function (MTF) and noise-power spectrum, and the estimated incident x-ray fluence under the mammography beam quality of W/Al. From the comparison between the theoretical and experimental DQEs, the overall tendencies were well agreed. Based on the developed model, we have investigated the DQEs values with respect to various design parameters of the CMOS x-ray detector such as phosphor quantum efficiency, Swank noise, photodiode quantum efficiency and the MTF of various scintillator screens. This theoretical approach is very useful tool for the understanding of the developed imaging systems as well as helpful for the better design or optimization for new development.

• Journal of Radiation Industry
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• v.6 no.1
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• pp.31-40
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• 2012

There are two methods to fabricate the readout electronic to a large-area CMOS image sensor (LACIS). One is to design and manufacture the sensor part and signal processing electronics in a single chip and the other is to integrate both parts with bump bonding or wire bonding after manufacturing both parts separately. The latter method has an advantage of the high yield because the optimized and specialized fabrication process can be chosen in designing and manufacturing each part. In this paper, LACIS chip, that is optimized design for the latter method of fabrication, is presented. The LACIS chip consists of a 3-TR pixel photodiode array, row driver (or called as a gate driver) circuit, and bonding pads to the external readout ICs. Among 4 types of the photodiode structure available in a standard CMOS process, $N_{photo}/P_{epi}$ type photodiode showed the highest quantum efficiency in the simulation study, though it requires one additional mask to control the doping concentration of $N_{photo}$ layer. The optimized channel widths and lengths of 3 pixel transistors are also determined by simulation. The select transistor is not significantly affected by channel length and width. But source follower transistor is strongly influenced by length and width. In row driver, to reduce signal time delay by high capacitance at output node, three stage inverter drivers are used. And channel width of the inverter driver increases gradually in each step. The sensor has very long metal wire that is about 170 mm. The repeater consisted of inverters is applied proper amount of pixel rows. It can help to reduce the long metal-line delay.

• Journal of the Institute of Electronics and Information Engineers
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• v.54 no.5
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• pp.74-84
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• 2017

Since a soldier manages a hand-held landmine detector by hands, it is necessary to develop a system that can detect the target quickly and accurately. However, the hand-held landmine detector used in Korea has a problem that it can only detect the metal mines. Therefore, it is important to solve the problem and to develop a hand-held landmine detection system suitable for the Korean environment. In this paper, we propose a hand-held landmine detection system suitable for the Korean environment using ground penetrating radar. The proposed system uses depth compensation, matched filtering, and frequency shifting filtering for preprocessing. Then, in the detection step, the system detects the target using the edge ratio. In order to evaluate the proposed system, we buried landmines in sandy loam which is most of the soil in Korea and obtained a set of ground penetrating radar data by using a hand-held landmine detector. By using the obtained data, we carried out some experiments on the size and position of the patch and the shifting frequency to find the optimal parameter values and measured the detection performance using the optimized values. Experimental results show that the proposed preprocessing algorithms are suitable for detecting all landmines at low false alarm rate and the performance of the proposed system is superior to that of previous works.

• Radiation Oncology Journal
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• v.17 no.3
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• pp.256-260
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• 1999

Purpose : An investigation has been carried out on the factors which affect the response reading of thermoluminescent dosimeters (TLD-100) loaded with thin material in high energy Photon. The aim of the study was to assess the energy response of TLD-100 to the therapeutic ranges of photon beam. Materials and Methods : In this technique, TLD-100 (abbreviated as TLD) chips and three different thin material (Tin, Gold, and Tissue equivalent plastic plate) which mounted on the TLD chip were used in the clinical photon beam. The thickness of each metal plates was 0.1 mm and TE plastic plate was 1 mm thick. These compared with the photon energy dependence of the sensitivities of TLD (normal chip), TLD loaded with Tin or Gold plate, for the photon energy range 6 MV to 15 MV, which was of interest in radiotherapy. Results : The enhancement of surface dose in the TLD with metal plate was clearly detected. The TLD chips with a Gold plate was found to larger response by a factor of 1.83 in 10 MV photon beam with respect to normal chip. The sensitivity of TLD loaded with Tin was less than that for normal TLD and TLD loaded with Gold. The relative sensitivity of TLD loaded with metal has little energy dependence. Conclusion : The good stability and linearity with respect to monitor units of TLD loaded with metal were demonstrated by relative measurements in high energy Photon ($6\~15$ MV) beams. The TLD laminated with metals embedded system in solid water phantom is a suitable detector for relative dose measurements in a small beam size and surface dose.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.47 no.6
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• pp.35-42
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• 2010

This paper describes a 10 bit 80MHz CMOS D/A converter for wireless communication system. The proposed circuit in the paper is implemented with a $0.18{\mu}m$ CMOS n-well 1-poly 6-metal process. The architecture of the circuit consists of the 4bit LSB with binary decoder, and both the 3bit ULSB and the 3bit MSB with the thermometer decoder. The measurement results demonstrates SFDR of 60.42dBc at sampling frequency 80MHz, input frequency 1MHz and ENOB of 8.75bit. INL and DNL have been measured to be ${\pm}$0.38LSB and ${\pm}$0.32LSB and glitch energy is measured to be 4.6$pV{\cdot}s$. Total power dissipation is 48mW at 80MHz(maximum sampling frequency) with a single power supply of 1.8V.