• Membrane Journal
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• v.30 no.2
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• pp.97-110
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• 2020

CO₂ capture and storage (CCS) is one of the promising technologies that can mitigate ever-growing emission of anthropogenic carbon dioxide and resultant climate change. Among them, chemical looping combustion (CLC) and calcium looping (CaL) are getting increasing attention recently as the prospective alternatives to the existing amine scrubbing. Both methods use metal oxides in the process and consist of cyclic reactions. Yet, due to their cyclic nature, they both need to resolve sintering-induced cyclic stability deterioration. Moreover, the structure of the metal oxides needs to be optimized to enhance the overall performance of CO₂ capture and storage. Deposition of thin film coating on the metal oxide is another way to get rid of wear and tear during the sintering process. Chemical vapor deposition or atomic layer deposition are the well-known, established methods to form thin film membranes, which will be discussed in this review. Various effective recent developments on structural modification of metal oxide and incorporation of stabilizers for cyclic stability are also discussed.

• Current Photovoltaic Research
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• v.7 no.4
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• pp.103-110
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• 2019

Cu(In,Ga)₃Se₅ (β-CIGS) has a band gap of 1.35 eV, which is an optimum value for high solar-energy conversion efficiency. The effects of Cu and Ga content on the cell performance were investigated previously. However, the effect of Se content on the cell performance is not well understood yet. In this work, β-CIGS films were fabricated by three-stage co-evaporation of elemental sources with various Se fluxes at the third stage instead of at all stages. The average composition of five samples was Cu_1.05(In_0.59,Ga_0.41)3Se_y, where the stoichiometric y value is 5.03 and the stoichiometric Se/metal (Se/M) ratio is 1.24. We varied the Se/metal ratio in a range from 1.18 to 1.28. We found that the best efficiency was achieved when the Se/M ratio was 1.24, which is exactly the stoichiometric value where the CIGS grains on the CIGS surface were tightly connected and faceted. With the optimum Se/M ratio, we were able to enhance the cell efficiency of a β-CIGS solar cell from 9.6% to 12.0% by employing a Na₂S post deposition treatment. Our results indicate that Na₂S post deposition treatment is very effective to enhance the cell efficiency to a level on par with that in α-CIGS cell.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.16 no.12
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• pp.8679-8683
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• 2015

Using a surface modification technique, ion beam assisted deposition (IBAD) of Ti thin film it becomes possible to prepare an active ceramic surface to braze $Al_2O_3$-STS304 with conventional Ag-Cu eutectic composition filler metal. Researches on bonding formations at interfaces of ceramic joints were mainly related on the development of filler metals to ceramic, the process parameters, and clarifications of reaction products. From the results, the reactive brazing is a very convenient technique compared to the conventional Mn-Mo method. However melting point of reactive filler is still higher than that of Ag-Cu eutectic and it forms the brittle inter metallic compound. Recently several new approaches are introduced to overcome the main shortcomings of the reactive metal brazing in ceramic-metal, metal vapor vacuum arc ion source was introduced to implant the reactive element directly into the ceramics surface, and sputter deposition with sputter etching for the deposition of active material.

• Korean Chemical Engineering Research
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• v.47 no.2
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• pp.141-149
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• 2009

The Cu thin film material and process, which have been already used for metallization of CMOS(Complementary Metal Oxide Semiconductor), has been highlighted as the Cu metallization is introduced to the metallization process for giga - level memory devices. The recent progresses in the development of key elements in electrochemical processes like surface pretreatment or electrolyte composition are summarized in the paper, because the semiconductor metallization by electrochemical processes such as electrodeposition and electroless deposition controls the thickness of Cu film in a few nm scales. The technologies in electrodeposition and electroless deposition are described in the viewpoint of process compatibility between copper electrodeposition and damascene process, because a Cu metal line is fabricated from the Cu thin film. Silver metallization, which may be expected to be the next generation metallization material due to its lowest resistivity, is also introduced with its electrochemical fabrication methods.

• Progress in Superconductivity
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• v.11 no.2
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• pp.100-105
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• 2010

Reel-to-reel deposition of $Y_2O_3$ has been performed on Ni-5%W metal substrates using the RF-sputtering method. The epitaxial orientation of $Y_2O_3$ buffer layers to the base bi-axially textured substrate was well identified using ${\theta}-2{\theta}$, out-of-plane ($\omega$), and in-plane ($\phi$) scans in X-ray diffraction analysis. The optimization of $Y_2O_3$ seed layers in reel-to-reel fashion were investigated varying the deposition temperature, sputtering power, and pressure for its significant roles for the following buffer stacks and superconducting layers. $Y_2O_3$ were all grown epitaxially on bi-axially textured metal substrates at 380 watts and 5 mTorr in the temperature range of $600-740^{\circ}C$ with higher $Y_2O_3$ (400) intensities at ${\sim}710^{\circ}C$. It was found that the $\Delta\omega$ values were $1-2^{\circ}$ lower but the $\Delta\phi$ values were above $1^{\circ}$ higher than that of Ni-W substrates. As the sputtering power increased from 340 to 380 watts, $\Delta\omega$ and $\Delta\phi$ values showed decreased tendency. Even in the small window of deposition pressure of 3-7 mTorr, the $Y_2O_3$ (400) intensities increased and $\Delta\omega$ and $\Delta\phi$ values were reduced as sputtering pressure increased.

• Proceedings of the Materials Research Society of Korea Conference
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• 2009.05a
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• pp.22.2-22.2
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• 2009

Currently, metal silicides become increasingly more essential part as a contact material in complimentary metal-oxide-semiconductor (CMOS). Among various silicides, NiSi has several advantages such as low resistivity against narrow line width and low Si consumption. Generally, metal silicides are formed through physical vapor deposition (PVD) of metal film, followed by annealing. Nanoscale devices require formation of contact in the inside of deep contact holes, especially for memory device. However, PVD may suffer from poor conformality in deep contact holes. Therefore, Atomic layer deposition (ALD) can be a promising method since it can produce thin films with excellent conformality and atomic scale thickness controllability through the self-saturated surface reaction. In this study, Ni thin films were deposited by thermal ALD using bis(dimethylamino-2-methyl-2-butoxo)nickel [Ni(dmamb)2] as a precursor and NH3 gas as a reactant. The Ni ALD produced pure metallic Ni films with low resistivity of 25 $\mu{\Omega}cm$. In addition, it showed the excellent conformality in nanoscale contact holes as well as on Si nanowires. Meanwhile, the Ni ALD was applied to area-selective ALD using octadecyltrichlorosilane (OTS) self-assembled monolayer as a blocking layer. Due to the differences of the nucleation on OTS modified surfaces toward ALD reaction, ALD Ni films were selectively deposited on un-coated OTS region, producing 3 ${\mu}m$-width Ni line patterns without expensive patterning process.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.93-93
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• 2013

In recent years, multifunctional ternary nitride thin films have received extenstive attention due to its versatility in many applications. In particular, noble metal based ternary nitride thin films showed a promising properties in the application of Multifunctional heating resistor films because its good electrical properties and excellent resistance against oxidation and corrosion. In this study, we prepared multifunctional noble metal based ternary nitride thin films by atomic layer deposition (ALD) and plasma-enhanced ALD (PEALD) method. ALD and PEALD techniques were used due to their inherent merits such as a precise composition control and large area uniformity, which is very attractive for preparing multicomponent thin films on large area substrate. Here, we will demonstrate the design concept of multifunctional noble metal based ternary thin films. And, the relationship between microstructural evolution and electrical resistivity in noble metal based ternary thin films will be systemically presented. The useful properties of noble metal based ternary thin films including anti-corrosion and anti-oxidation will be discussed in terms of hybrid functionality.

• Journal of Welding and Joining
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• v.34 no.4
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• pp.23-27
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• 2016

A 3D printed metal part and thermal plastic polymer part were joined by direct laser irradiation. The 3D metal part was fabricated by using DED(Direct Energy Deposition) with STS316 material. The experiment was carried out through no patterned metal surface, 3D metal printed surface and micro laser patterned surface. The most secure joining quality was obtained at the laser micro patterned surface specimen and the counterparts of polymers were PLA and PE based thermo plastics. The applied laser power was 350Watt and the distance of patterns was maintained at $150{\mu}m$. The laser line width was optimized at $450{\mu}m$ and the laser micro pattern depth was $180{\mu}m$ for the best joining quality. Based on the result analysis, the possibility of laser material joining for metal to polymer was proposed and multi-material joining will be possible in 3D laser direct material fabrication.

• Proceedings of the Korean Environmental Health Society Conference
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• 2004.06a
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• pp.92-106
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• 2004

Elemental dry deposition fluxes were measured using dry deposition plates from March to June 1998 in Seoul, Korea. During this spring sampling period several yellow sand events characterized by long-range transport from China and Mongolia impacted the area. Understanding the impact of yellow-sand events on atmospheric dry deposition is critical to managing the heavy metal levels in the environment in Korea. In this study, the measured flux of a primarily crustal metal, Al and an anthropogenic metal, Pb was used with two hybrid receptor models, potential source contribution function (PSCF) and residence time weighted concentration (RTWC) for locating sources of heavy metals associated with atmospheric dry deposition fluxes during the yellow-sand events in Seoul, Korea. The PSCF using a criterion value of the 75th percentile of the measured dry deposition fluxes and RTWC results using the measured elemental dry deposition fluxes agreed well and consistently showed that there were large potential source areas in the Gobi Desert in China and Mongolia and industrial areas near Tianjin, Tangshan, and Shenyang in China. Major industrial areas of Shenyang, Fushun, and Anshan, the Central China loess plateau, the Gobi Desert, and the Alaskan semi-desert in China were identified to be major source areas for the measured Pb flux in Seoul, Korea. For Al, the main industrial areas of Tangshan, Tianjin and Beijing, the Gobi Desert, the Alashan semi-desert, and the Central China loess plateau were found to be the major source areas. These results indicate that both anthropogenic sources such as industrial areas and natural sources such as deserts contribute to the high dry deposition fluxes of both Pb and Al in Seoul, Korea during yellow-sand events. RTWC resolved several high potential source areas. Modeling results indicated that the long-range transport of Al and Pb from China during yellow-sand events as well as non yellow-sand spring daytimes increased atmospheric dry deposition of heavy metals in Korea.

• Journal of the Korean Electrochemical Society
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• v.19 no.3
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• pp.57-62
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• 2016

The over-discharging phenomena in sodium-nickel chloride batteries were investigated in relation to decomposition of molten salt electrolyte and consequent metal co-deposition. From XRD analysis, the material deposited on graphite cathode current collector was revealed to be by-product of molten salt electrolyte decomposition. In particular, the result showed that the Ni-Al alloys ($Al_3Ni_2$, $Ni_3Al$ and $Al_3Ni$) were electrochemically deposited on graphite current collectors in line with over-discharging behaviors. It is assumed that the $NiCl_2$ solubility in molten salt electrolytes leads to the co-deposition of Ni-Al alloys by increasing metal deposition potential above 1.6 V (vs. $Na/Na^+$). The cell tests have revealed that the composition of molten salt electrolytes modified by various additives makes a decisive influence on the over-discharging behaviors of the cells. It was revealed that NaOCN addition to molten salt electrolytes was advantageous to suppress over-discharge reactions by modifying the characteristics of molten salt electrolytes. NaOCN addition into molten salt electrolytes seems to suppress Ni solubility by maintaining basic melts. The cell using modified molten salt electrolyte with NaOCN (Cell D) showed relatively less cell degradation compared with other cells for long cycles.