• Proceedings of the IEEK Conference
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• 1998.06a
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• pp.429-432
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• 1998

The impact of hot carrier induced gate leakage current on the refresh time of memory devices has been examined. The maximum allowable supply voltage for cell transistor has been determined form the degradation of the refresh time. The desing guideline for cell capacitors and refresh circuits has been suggested.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.20 no.2
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• pp.179-185
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• 2020

DRAM is a major component of the main memory system. As the operating system evolves and application complexity and capacity increases, the capacity and speed of DRAM are also increasing. DRAM should perform a refresh action of periodically reading and then re-storing stored values, and the accompanying performance and power/energy overhead embodies characteristics that worsen as capacity increases. This study proposes an energy efficiency improvement technique that efficiently stores the rows that need to be refreshed within 64ms and 128ms using the bloom filter for cells with the lowest retention time of electrons. The results of the experiment showed that the proposed technique resulted in an average 5.5% performance improvement, 76.4% reduction in average refresh energy, and 10.3% reduction in average EDP.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.47 no.12
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• pp.31-38
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• 2010

This paper presents the design of a graphic memory for QVGA-scale LCD Driver IC (LDI). The graphic memory is designed based on the pseudo-SHAM for the purpose of small area, and the memory cell structure is designed using a bit line partitioning method to improve sensing characteristics and drivabilties in the line-read operation. Also, a collision protection circuit using C-gate is designed to control collisions between read/write operations and self-refresh/line-read operations effectively. The graphic memory circuit has been designed in transistor level using $0.18{\mu}m$ CMOS technology library and the operations of the graphic memory have been verified using Hspice. The results show that the bit-bitb line voltage difference, ${\Delta}V$ increases by 40%, the charge sharing time between bit and bitb voltages $T_{CHGSH}$ decreases by 30%, and the current during line-read decreases by 40%.

• Journal of Korea Multimedia Society
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• v.7 no.12
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• pp.1754-1764
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• 2004

Lately mobile handheld devices such as Personal Digital Assistant (PDA) and cellular phones are getting more popular for personal web surfing. However, today most mobile handheld devices have relatively poor web browsing capability due to their low performance so their users have to suffer longer communication latency than those of desktop Personal Computers (PCs). In this paper, we propose an effective pre-refresh mechanism for embedded web browser of mobile handheld devices to reduce this problem. The proposed mechanism uses the idle time to pre-refresh the expired web objects in an embedded web browser's cache memory. It increases the utilization of Central Processing Unit (CPU) power and network bandwidth during the idle time and consequently reduces the client's latency and web browsing cost. An experiment was done using a simulator designed by us to evaluate the efficacy of the proposed mechanism. The experiment result demonstrates that it has a good performance to make web surfing faster.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.20 no.1
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• pp.193-198
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• 2020

The various uses of the Convolutional Neural Network technology are accelerating the evolution of the computing area, but the opposite is causing serious hardware performance shortages. Neural network accelerators, next-generation memory device technologies, and high-bandwidth memory architectures were proposed as countermeasures, but they are difficult to actively introduce due to the problems of versatility, technological maturity, and high cost, respectively. This study proposes DRAM-based main memory technology that enables read operations to be completed without waiting until the end of the refresh operation using pre-stored XOR bit values, even when the refresh operation is performed in the main memory. The results showed that the proposed technique improved performance by 5.8%, saved energy by 1.2%, and improved EDP by 10.6%.

• KIISE Transactions on Computing Practices
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• v.21 no.1
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• pp.88-93
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• 2015

In modern computer systems, DRAM is commonly used as main memory due to its low read/write latency and high endurance. However, DRAM is volatile memory that requires periodic power supply (i.e., memory refresh) to sustain the data stored in it. On the other hand, PCM is a promising candidate for replacement of DRAM because it is non-volatile memory, which could sustain the stored data without memory refresh. PCM is also available for byte-addressable access and in-place update. However, PCM is unsuitable for using main memory of a computer system because it has two limitations: high read/write latency and low endurance. To take the advantage of both DRAM and PCM, a hybrid main memory, which consists of DRAM and PCM, has been suggested and actively studied. In this paper, we propose a novel page replacement algorithm for hybrid main memory. To cope with the weaknesses of PCM, our scheme focuses on reducing the number of PCM writes in the hybrid main memory. Experimental results shows that our proposed page replacement algorithm reduces the number of PCM writes by up to 80.5% compared with the other page replacement algorithms.

• Journal of IKEEE
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• v.5 no.1 s.8
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• pp.43-51
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• 2001

As the density of memories increases, unwanted interference between cells and coupling noise between bit-lines are increased. And testing high-density memories for a high degree of fault coverage can require either a relatively large number of test vectors or a significant amount of additional test circuitry. So far, conventional test algorithms have focused on faults between neighborhood cells, not neighborhood bit-lines. In this paper, a new test algorithm for neighborhood bit-line sensitive faults (NBLSFs) based on the NPSFs(Neighborhood Pattern Sensitive Faults) is proposed. And the proposed algorithm does not require any additional circuit. Instead of the conventional five-cell or nine-cell physical neighborhood layouts to test memory cells, a three-cell layout which is minimum size for NBLSFs detection is used. Furthermore, to consider faults by maximum coupling noise by neighborhood bit-lines, we added refresh operation after write operation in the test procedure(i.e.,$write{\rightarrow}\;refresh{\rightarrow}\;read$). Also, we show that the proposed algorithm can detect stuck-at faults, transition faults, coupling faults, conventional pattern sensitive faults, and neighborhood bit-line sensitive faults.

• Proceedings of the IEEK Conference
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• 2003.07b
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• pp.1209-1212
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• 2003

In this paper, we propose a SDRAM Controller. The SDRAM is often used a mainstream memory as embedded system memory due to its short latency, burst access and pipeline features. The proposed Controller provides essential functions for SDRAM initialization, read/write accesses, memory refresh and Burst access. Furthermore, the proposed controller is implemented in the form of SOFT IP. Therefore, it reduces the designer's effort greatly.

• Journal of KIISE
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• v.42 no.11
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• pp.1314-1321
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• 2015

Mobile devices employ buffer cache mechanisms, just as in computer systems such as desktops or servers, to mitigate the performance gap between main memory and secondary storage. However, DRAM has a problem in that it accelerates battery consumption by performing refresh operations periodically to maintain the stored data. In this paper, we propose a novel buffer cache scheme to increase the battery lifecycle in mobile devices based on a hybrid main memory architecture consisting of DRAM and non-volatile PCM. We also suggest a new buffer cache policy that allocates buffers based on process states to optimize the performance and endurance of PCM. In particular, our algorithm allocates each page to the appropriate position corresponding to the state of the application that owns the page, and tries to ensure a rapid response of foreground applications even with a small amount of DRAM memory. The experimental results indicate that the proposed scheme reduces the elapsed time of foreground applications by 58% on average and power consumption by 23% on average without negatively impacting the performance of background applications.

• ETRI Journal
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• v.37 no.4
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• pp.787-792
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• 2015

To accomplish a high-speed test on low-speed automatic test equipment (ATE), a new instruction-based fully programmable memory built-in self-test (BIST) is proposed. The proposed memory BIST generates a highspeed internal clock signal by multiplying an external low-speed clock signal from an ATE by a clock multiplier embedded in a DRAM. For maximum programmability and small area overhead, the proposed memory BIST stores the unique sets of instructions and corresponding test sequences that are implicit within the test algorithms that it receives from an external ATE. The proposed memory BIST is managed by an external ATE on-the-fly to perform complicated and hard-to-implement functions, such as loop operations and refresh-interrupts. Therefore, the proposed memory BIST has a simple hardware structure compared to conventional memory BIST schemes. The proposed memory BIST is a practical test solution for reducing the overall test cost for the mass production of commodity DDRx SDRAMs.