• IEMEK Journal of Embedded Systems and Applications
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• v.13 no.3
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• pp.125-131
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• 2018

STT-RAM is attracting as a next generation Non-volatile memory for replacing cache memory with low leakage energy, high integration and memory access performance similar to SRAM. However, there is problem of write operations as the other Non_volatile memory. Hybrid cache memory using SRAM and STT-RAM is attracting attention as a cache memory structure with lowe power consumption. Despite this, reducing the leakage energy consumption by the STT-RAM is still lacking access to the Dynamic energy. In this paper, we proposed as energy management method such as a way-selection approach for hybrid L2 cache fo SRAM and STT-RAM and memory selection method of write/read operation. According to the simulation results, the proposed hybrid cache memory reduced the average energy consumption by 40% on SPEC CPU 2006, compared with SRAM cache memory.

• Transactions on Electrical and Electronic Materials
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• v.16 no.6
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• pp.293-302
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• 2015

Degraded data stability, weaker write ability, and increased leakage power consumption are the primary concerns in scaled static random-access memory (SRAM) circuits. Two new SRAM cells are proposed in this paper for achieving enhanced read data stability and lower leakage power consumption in memory circuits. The bitline access transistors are asymmetrically gate-underlapped in the proposed SRAM cells. The strengths of the asymmetric bitline access transistors are weakened during read operations and enhanced during write operations, as the direction of current flow is reversed. With the proposed hybrid asymmetric SRAM cells, the read data stability is enhanced by up to 71.6% and leakage power consumption is suppressed up to 15.5%, while displaying similar write voltage margin and maintaining identical silicon area as compared to the conventional memory cells in a 15 nm FinFET technology.

• Proceedings of the Korean Information Science Society Conference
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• 2005.07a
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• pp.868-870
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• 2005

최근에는 자원이 제한적인 시스템을 위한 embedded JVM 환경에서 자바 응용 프로그램을 수행할 때 embedded JVM 의 성능에 따른 performance 뿐만 아니라 에너지 소비를 줄이는 일이 크게 대두되고 있다. 메모리에서 사용되는 에너지는 메모리에 접근할 때마다 소비되는 dynamic energy와 메모리에 파워가 들어와 있을 때 항상 소비되는 leakage energy 로 구분할 수 있다. embedded 환경을 고려하지 않았던 이전에는 leakage energy 가 중요한 부분으로 인식되지 않았지만, 현재는 dynamic energy 못지 않게 중요한 부분으로 인식되고 있다. 본 논문에서는 Banked Memory System을 사용하는 임베디드 JVM의 환경하에서 leakage energy를 효과적으로 줄일 수 있는 KVM의 힙 메모리 관리체계를 설계하였다.

• International Journal of Internet, Broadcasting and Communication
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• v.10 no.4
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• pp.6-11
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• 2018

As embedded memory technology evolves, the traditional Static Random Access Memory (SRAM) technology has reached the end of development. For deepening the manufacturing process technology, the next generation memory technology is highly required because of the exponentially increasing leakage current of SRAM. Non-volatile memories such as STT-MRAM (Spin Torque Transfer Magnetic Random Access Memory), PCM (Phase Change Memory) are good candidates for replacing SRAM technology in embedded memory systems. They have many advanced characteristics in the perspective of power consumption, leakage power, size (density) and latency. Nonetheless, nonvolatile memories have two major problems that hinder their use it the next-generation memory. First, the lifetime of the nonvolatile memory cell is limited by the number of write operations. Next, the write operation consumes more latency and power than the same size of the read operation.These disadvantages can be solved using the compiler. The disadvantage of non-volatile memory is in write operations. Therefore, when the compiler decides the layout of the data, it is solved by optimizing the write operation to allocate a lot of data to the SRAM. This study provides insights into how these compiler and architectural designs can be developed.

• IEIE Transactions on Smart Processing and Computing
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• v.2 no.4
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• pp.226-239
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• 2013

A number of systems have several on-chip memories with cache memory being one of them. Conventional cache memory consists of SRAM but the ratio of static energy to the total energy of the memory architecture becomes larger as the leakage power of traditional SRAM increases. Spin-Torque Transfer RAM (STT-RAM), which is a variety of Non-Volatile Memory (NVM), has many advantages over SRAM, such as high density, low leakage power, and non-volatility, but it consumes too much writing energy. This study evaluated a wide range of energy consumptions of a two-level cache using NVM partially on a mobile processor. Through a number of experimental evaluations, it was confirmed that the use of NVM partially in the two-level cache effectively reduces energy consumption significantly.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.49 no.7
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• pp.71-79
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• 2012

As advances in computer technology, dissemination of smartphones and tablet PCs has increased and digital media has become easily accessible. The performance of computer hardware is improved and the form of hardware is changed, but basically the change in mechanism was not occurred. Typically, the data used in the program is resident in memory during the operation because of the operating system efficiency. So, these data in memory is accessible through the memory dumps or real-time memory analysis. The user's personal information or confidential data may be leaked by exploiting data; thus, the countermeasures should be provided. In this paper, we proposed the method that minimizes user's data leakage through finding the physical memory address of the process using virtual memory address, and initializing memory data of the process.

• Journal of the Korea Society of Computer and Information
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• v.23 no.4
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• pp.81-88
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• 2018

In this paper, we present some problems with the Groupware Messenger functionality based on dot net 2.0 and implement a new design structure to solve them. They include memory leakage, slow processing, and client window memory crash. These problems resulted in the inconvenience of using instant messaging and the inefficient handling of office tasks. Therefore, in this paper, instant messaging functionality is implemented according to a new design architecture. The new system upgrades dot net 4.5 for clients and deploys the new features based on MQTT for the messenger server. We verify that the memory leak problem and client window memory crash issues have been eliminated on the system with the new messenger functionality. We measure the amount of time it takes to bind data to a set of messages and evaluate the performance, compared to a given system. Through this comparative evaluation, we can see that the new system is more reliable and performing.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.49 no.8
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• pp.10-15
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• 2012

This letter proposes a low-leakage SRAM using power-gating and voltage-level control. The power-gating scheme significantly reduces leakage power by shutting off the power supply to blank memory cell blocks. The voltage-level control scheme saves leakage power by raising the ground line voltage of SRAM cells and word line decoders in data-stored memory cell blocks. A $4K{\times}8bit$ SRAM chip was fabricated using a 1.2V $0.13{\mu}m$ CMOS process. The leakage powers are $1.23{\sim}9.87{\mu}W$ and $1.23{\sim}3.01{\mu}W$ for 0~100% memory usage in active and sleep modes, respectively. During the sleep mode, the proposed SRAM consumes 12.5~30.5% leakage power compared to the conventional SRAM.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2015.05a
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• pp.522-524
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• 2015

A USB memory stick became common for secondary storage Unit.. But USB memory stick has critical problems as well. Such as personal information data leakage due to easy loss of the portable device. Therefore, User increased Repurchases of USB memory stick, and damage case of personal and company information data leakage increased. In this study, to prevent such loss and stolen, we propose Smart USB memory stick based on Bluetooth. Smart USB memory stick support the security and prevent the loss.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.388-388
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• 2012

In this letter, We have investigated cell characteristics of the alloy FePt-NDs charge trapping memory capacitors with high-k $Al_2O_3$ dielectrics as a blocking oxide. The capacitance versus voltage (C-V) curves obtained from a representative MOS capacitor embedded with FePt-NDs synthesized by the post deposition annealing (PDA) treatment process exhibit the window of flat-band voltage shift, which indicates the presence of charge storages in the FePt-NDs. It is shown that NDs memory with high-k $Al_2O_3$ as a blocking oxide has performance in large memory window and low leakage current when the diameter of ND is below 2 nm. Moreover, high-k $Al_2O_3$ as a blocking oxide increases the electric field across the tunnel oxide, while reducing the electric field across the blocking layer. From this result, this device can achieve lower P/E voltage and lower leakage current. As a result, a FePt-NDs device with high-k $Al_2O_3$ as a blocking oxide obtained a~7V reduction in the programming voltages with 7.8 V memory.