• Economic and Environmental Geology
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• v.28 no.6
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• pp.613-621
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• 1995

It is understood that many big tungsten deposits such as the Sangdong in Korea, Fugigatami in Japan, Yukon in Canada, Pine Creek in U.S.A and Vostok in Russia were formed at late Cretaceous ages. However, most of tungsten mineralization in China where half the total world tungsten ores is reserved took place in late Jurassic to early Cretaceous ages. While the close association of molybdenum with tungsten mineralization is observed in the deposits related with Cretaceous magma, tungsten deposits in China related with late Jurassic to early Cretaceous show a close association of tin as well as molybdenum mineralization. It is characteristic that tungsten mineralization in China was followed by tin mineralization. The mode of occurrence of tungsten ore deposits in China is various and may represent the origin of tungsten in general, since the larger half of total amount of tungsten ores in the world are reserved in China. In case of Korea, more than 90% of total production of tungsten was occupied by the Sangdong tungsten deposit, which produced molybdenite as a byproduct Even if tin is detected in ppm unit content, no cassiterite is found in the Sangdong tungsten orebody. A similar type of two tungsten deposits is comparatively studied in order to confirm the published data; one is the Moping tungsten deposit in China and the other is the Dehwa tungsten deposit in Korea. Mineral assemblages occurring in quartz veins of both deposits are more or less same except that zinnwaldite and cassiterite occur only in the former deposit Ages of zinnwaldite and muscovite closely with molybdenite in the former deposit are 181.1 Ma and 167.8 Ma respectively, while muscovites associated with molybdenite in the latter deposit show ages of 80.9 Ma and 80.2 Ma. These results may represent deficient supply of tin from the source granitoid from which tungsten was derived in Korean peninsula during Cretaceous period, while tin supplied during tungsten mineralization tended to increase and the active tin mineralization followed the Jurassic tungsten mineralization in China.

• Transactions of the Korean Society of Automotive Engineers
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• v.15 no.5
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• pp.9-16
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• 2007

Since the liquid phase LPG injection(LPLI) system has an advantage of higher power and lower emission characteristics than the mixer type fuel supply system, many studies and applications have been conducted. However, the heat extraction, due to the evaporation of liquid fuel, causes not only a dropping of LPG fuel but also icing phenomenon that is a frost of moisture in the air around the nozzle tip. Because both lead to a difficulty in the control of accurate air fuel ratio, it can result in poor engine performance and a large amount of HC emissions. The experimental investigation was carried out on the bench test rig in this study. It was found that n-butane, that has a relatively high boiling point($-0.5^{\circ}C$), was a main species of droplet composition and also found that the droplet problem was improved by the use of a large inner to outer bore ratio nozzle whose surface roughness is smooth. The icing phenomena were decreased when the an engine head temperature was increased, although a large amount of icing deposit was still observed in the case of $87^{\circ}C$. Also, it was observed that the icing phenomenon is improved by using anti-icing bushing.

• Korean Journal of Materials Research
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• v.14 no.12
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• pp.835-839
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• 2004

The diamond thin films was deposited on Si(100) substrate by Hot Filament Chemical Vapor Deposition (HFCVD) method using supplied the $CH_{3}OH/H_{2}O$ mixtured gas with excess H_{2} gas. The role of hydrogen ion as the growth mechanism of the diamond deposit was examined and compared the $CH_{3}OH/H_{2}O$ with the $CH_4/H_2$. Pressures in the range of $1.1\sim290{\times}10^2$ Pa were applied and using $3.4\sim4.4$ kw power. It was investigated by Scanning Electron Microscopy(SEM) and Raman spectroscopy The H ion was etching the graphite and restrained from $sp^3\;to\;sp^2$. But excess $H_2$ gas was not helped diamond deposit using $CH_{3}OH/H_{2}O$ mixtured gas. It was shown that the role of hydrogen ion of deposited diamond films using $CH_{3}OH/H_{2}O$ was different from $CH_4/H_2$.

• Journal of the Korean Physical Society
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• v.73 no.12
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• pp.1867-1872
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• 2018

This study proposes a route for surface modification for p-type cobalt oxide-based gas sensors. We deposit a thin layer of Ni on the Co oxide film by sputtering process and annealed at $350^{\circ}C$ for 15 min in air, which changes a typical sputtered film surface into one interlaced with a high density of hemispherical nanoparticles. Our in-depth materials characterization using transmission electron microscopy discloses that the microstructure evolution is the result of an extensive inter-diffusion of Co and Ni, and that the nanoparticles are nickel oxide dissolving some Co. Sensor performance measurement unfolds that the surface modification results in a significant sensitivity enhancement, nearly 200% increase for toluene (at $250^{\circ}C$) and CO (at $200^{\circ}C$) gases in comparison with the undoped samples.

• Journal of Powder Materials
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• v.29 no.1
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• pp.56-62
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• 2022

Atomic layer deposition (ALD) is a promising technology for the uniform deposition of thin films. ALD is based on a self-limiting mechanism, which can effectively deposit thin films on the surfaces of powders of various sizes. Numerous studies are underway to improve the performance of thermoelectric materials by forming core-shell structures in which various materials are deposited on the powder surface using ALD. Thermoelectric materials are especially relevant as clean energy storage materials due to their ability to interconvert between thermal and electrical energy by the Seebeck and Peltier effects. Herein, we introduce a surface and interface modification strategy based on ALD to control the performance of thermoelectric materials. We also discuss the properties of the interface between various deposition materials and thermoelectric materials.

• The Korean Journal of Ceramics
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• v.5 no.1
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• pp.50-54
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• 1999

$(Pb_xLa_{1-x}) (Zr_yTi_{1-y})O_3$ (PLZT) thin films with electrooptic effect are promising for the optical application such as display or light shutter. However, it is difficult to use inexpensive and transparent glass substrates because the conventional process for preparation of PLZT requires temperatures above $600^{\circ}C$. In order to deposit a perovskite PLZT thin films at low processing temperatures through alkoxide route, we have offered several seeding processes which reduce the activation energy for crystallization. In this study, we optimized the stacking structure of multilayered PLZT for obtaining single phase perovskite at lower temperatures. As a result, ferroelectric PLZT thin films with different compositions were successfully prepared at a temperature as low at $500^{\circ}C$.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2002.07a
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• pp.133-155
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• 2002

1. Quasicrystalline powders shows exotic physical and mechanical p properties 2. Applications: structural application: strengthening particles for composites C Coating application: wear resistance, low friction coefficient 3. For thermal spaying: material loss during process should be c considered to control chemical composition of deposit 4. Friction coefficient is strongly dependent on contact geometry F Friction coefficient from pin on plate: 0.1-0.2 Friction coe야icient from flat on plate: about 0.46. 5. Quasicrystalline materials show lower friction coefficient but higher w wear rate than corresponding values of $Cr_20_3$ coated layer. 6. Amorphous coating seems to be promising

• ETRI Journal
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• v.35 no.2
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• pp.340-343
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• 2013

A novel bumping process using solder bump maker is developed for the maskless low-volume solder on pad (SoP) technology of fine-pitch flip chip bonding. The process includes two main steps: one is the aggregation of powdered solder on the metal pads on a substrate via an increase in temperature, and the other is the reflow of the deposited powder to form a low-volume SoP. Since the surface tension that exists when the solder is below its melting point is the major driving force of the solder deposit, only a small quantity of powdered solder adjacent to the pads can join the aggregation process to obtain a uniform, low-volume SoP array on the substrate, regardless of the pad configurations. Through this process, an SoP array on an organic substrate with a pitch of $130{\mu}m$ is successfully formed.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.741-744
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• 2007

The research applied the processes of spin-coating and thermal-evaporating in proper order to deposit the hole transport material N,N'-Bis(naphthalen-1-yl)- N,N'-bis(phenyl)-benzidine (NPB) on the ITO substrate to make flexible organic light emitting diodes (FOLED) with double hole transport layer.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2012.05a
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• pp.124-125
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• 2012

Korea institute of materials science (KIMS) use a linear deposition source called as a closed drift linear plasma source (CDLPS) as well as dual magnetron sputtering (DMS) to deposit SiOxCyHz films in $HMDSO/O_2$ plasma. The CDLPS generates linear plasma using closed drifting electrons and can reduce device degradations due to energetic ion bombardments on organic devices such as organic photovoltaic and organic light emission diode by controlling an ion energy. The deposited films are investigated by Fourier transform infrared (FT-IR) spectroscopy, X-ray photoelectron spectroscopy (XPS), and atomic force microscopy (AFM). Optical emission spectroscopy (OES) is used to measure relative radical populations of dissociation and recombination products such as H, CH, and CO in plasma. And SiOx film is applied to a barrier film on organic photovoltaic devices.