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http://dx.doi.org/10.3740/MRSK.2004.14.12.835

Effect of H2 on The Diamond Film Growth Mechanism by HFCVD Method Using CH3OH/H2O  

Lee Kwon-Jai (Department of Physics, Soongsil University)
Shin Jae-Soo (Department of Electronic Materials Science, Daejeon University)
Kwon Ki-Hong (Department of Electronic Materials Science, Daejeon University)
Lee Min-Soo (Department of Applied Optics and electromagnetics, Hannam University)
Koh Jae-Gui (Department of Physics, Soongsil University)
Publication Information
Korean Journal of Materials Research / v.14, no.12, 2004 , pp. 835-839 More about this Journal
Abstract
The diamond thin films was deposited on Si(100) substrate by Hot Filament Chemical Vapor Deposition (HFCVD) method using supplied the $CH_{3}OH/H_{2}O$ mixtured gas with excess H_{2} gas. The role of hydrogen ion as the growth mechanism of the diamond deposit was examined and compared the $CH_{3}OH/H_{2}O$ with the $CH_4/H_2$. Pressures in the range of $1.1\sim290{\times}10^2$ Pa were applied and using $3.4\sim4.4$ kw power. It was investigated by Scanning Electron Microscopy(SEM) and Raman spectroscopy The H ion was etching the graphite and restrained from $sp^3\;to\;sp^2$. But excess $H_2$ gas was not helped diamond deposit using $CH_{3}OH/H_{2}O$ mixtured gas. It was shown that the role of hydrogen ion of deposited diamond films using $CH_{3}OH/H_{2}O$ was different from $CH_4/H_2$.
Keywords
HFCVD method; diamond film; growth mechanism;
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