• Proceedings of the KIPE Conference
• /
• 2016.11a
• /
• pp.226-227
• /
• 2016

본 논문은 SiC Mosfet Gate Driver에서 Overcurrent상황 발생시 Mosfet 양단의 전압을 검출함으로써 스위칭 소자를 보호하는 Desaturation detction circuit에 대해 다룬다. IGBT와 다르게 SiC Mosfet의 경우 ohmic 영역과 saturation영역의 구분이 명확하지 않기 때문에 과전류 발생시 Mosfet 양단 전압을 검출하는데 어려움이 있다. 따라서 이를 보완하기 위하여 Mosfet drain측에 새로운 회로를 추가로 설계함으로써 이를 보완하여 효과적으로 양단전압을 검출한다.

• Journal of Satellite, Information and Communications
• /
• v.8 no.3
• /
• pp.10-14
• /
• 2013

In this paper, when applying current-mode circuit design technique showing constant power dissipation none the less operation frequency, to the low power design of dynamic voltage frequency scaling, we introduce the low power current-mode circuit design technique applying MOSFET in sub-threshold region, in order to solve the problem that has large power dissipation especially on the condition of low operating frequency. BSIM 3, was used as a MOSFET model in circuit simulation. From the simulation result, the power dissipation of the current memory circuit with sub-threshold MOSFET showed $18.98{\mu}W$, which means the consumption reduction effect of 98%, compared with $900{\mu}W$ in that with strong inversion. It is confirmed that the proposed circuit design technique will be available in DVFS using a current-mode circuit design.

• Proceedings of the KIEE Conference
• /
• 1996.07b
• /
• pp.1292-1294
• /
• 1996

The general output circuit for PWM output is pushpull using a complimentary MOSFET. The gate driver coupled directly at gate can switch easy upto a high frequency. However, a high reverse recovery current and parastic components make a oscillation output. This paper analyses this phenomenon and proposes a novel output circuit preventing the oscillation.

• The Transactions of the Korean Institute of Power Electronics
• /
• v.26 no.6
• /
• pp.429-436
• /
• 2021

The design of a gate driver power supply for a three-phase inverter using a silicon carbide (SiC) MOSFET. The requirements for the power supply circuit of the gate driver for the SiC MOSFET are investigated, and a flyback converter using multiple transformers is used to make the four isolated power supplies. The proposed method has the advantage of easily constructing the power supply circuit in a limited space as compared with a multi-output flyback converter using a single core. The power supply circuit for the three-phase SiC MOSFET inverter for driving an AC motor is designed and implemented. The operation and validity of the implemented circuit are verified through simulations and experiments.

• Journal of Industrial Technology
• /
• v.27 no.B
• /
• pp.15-20
• /
• 2007

This paper presents the new design method for the gate driver circuit of the floating MOSFET by using the pulse transformer. Each parameters of the proposed circuit are delivered by the numerical calculation method. By considering inner characteristics of MOSFET, the gate driver makes to increase the efficiency of the power conversion and decrease operating heat. Computer simulations and to experimental results for a Buck Converter are presented in order to validate the proposed method.

• Proceedings of the KIPE Conference
• /
• 2013.11a
• /
• pp.89-90
• /
• 2013

Higher power density, higher operational temperature, lower on state resistance and higher switching frequency capabilities of Silicon Carbide (SiC) technology devices compared to Silicon (Si) devices makes it has higher promising market. One of the most developed SiC devices is the power MOSFET. This study tests the SiC MOSFET under short circuit conditions taking into account the effect of gate voltage characteristics. The results will be compared to IGBT and MOSFET Si devices with similar ratings. A tester circuit was designed to perform the short circuit operation.

• The Transactions of the Korean Institute of Power Electronics
• /
• v.8 no.1
• /
• pp.40-47
• /
• 2003

A low-cost current-sensing scheme for the motor drives with MOSFET is described. Many motor drives usually employ the common current sensors to measure current for the purpose of control or protection. These current sensors, however, significantly burden the power circuit with the size and cost. The proposed current-sensing scheme utilizes information concerning MOSFET's On-voltage and On-resistance. An analogue circuit detecting On-voltage can overcome the above disadvantages because the circuit is small and is made at a low cost, and the fuzzy inference for On-resistance is also simply designed based on MOSFET's characteristics. The validity of this scheme will be experimentally verified by adopting the current control of a battery car.

• 제어로봇시스템학회:학술대회논문집
• /
• 2000.10a
• /
• pp.509-509
• /
• 2000

The circuit is designed for improving the relationship between input voltage and output current of the MOS transistor, which is square function. This circuit can be used instead of n-channel MOSFET at once. The circuit consists of MOSFET, which acts as a voltage receiver. The source of MOSFET is connected to current control part which consist of bipolar transistors. The exponential characteristic of bipolar transistor is used to solve the square function of MOSFET that base on concept of log and anti-log circuit. The experimental results of simulation are agreed with the implemented circuit.

• The Transactions of the Korean Institute of Power Electronics
• /
• v.26 no.3
• /
• pp.214-221
• /
• 2021

SiC MOSFETs require a faster and more reliable short-circuit protection circuit than conventional methods due to narrow short-circuit withstand times. Therefore, this research proposes a short-circuit protection circuit using a current-sensing circuit based on Rogowski coil. The method of designing the current-sensing circuit, which is a component of the proposed circuit, is presented first. The integrator and input/output filter that compose the current-sensing circuit are designed to have a wide bandwidth for accurately measuring short-circuit currents with high di/dt. The precision of the designed sensing circuit is verified on a double pulse test (DPT). In addition, the sensing accuracy according to the bandwidth of the filters and the number of turns of the Rogowski coil is analyzed. Next, the entire short-circuit protection circuit with the current-sensing circuit is designed in consideration of the fast short-circuit shutdown time. To verify the performance of this circuit, a short-circuit test is conducted for two cases of short-circuit conditions that can occur in the half-bridge structure. Finally, the short-circuit shutdown time is measured to confirm the suitability of the proposed protection circuit for the SiC MOSFET short-circuit protection.

• Journal of the Korean Institute of Telematics and Electronics D
• /
• v.36D no.2
• /
• pp.71-80
• /
• 1999

In this paper, a power MOSFET driver with protection circuits is designed using a 2${\mu}m$ high-voltage CMOS process. For stable operations of control circuits a power managing circuit is designed, and a voltage-detecting short-circuit protection(VDSCP) is proposed to protect a voltage regulator in the power control circuit. The proposed VDSCP scheme eliminates voltage drop caused by a series resistor, and turns off output current under short-circuit state. To protect a power MOSFET, a short-load protection, a gate-voltage limiter, and an over-voltage protection circuit are also designed A high voltage 2 ${\mu}m$ technology provides the breakdown voltage of 50 V. The driver consumes the power of 20 ~ 100 mW along its operation state excluding the power of the power MOSFET. The active area of the power MOSFET driver occupies $3.5 {\times}2..8mm^2$.