The Transactions of the Korean Institute of Power Electronics (전력전자학회논문지)

The Korean Institute of Power Electronics (전력전자학회)
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Short-circuit Protection Circuit Design for SiC MOSFET Using Current Sensing Circuit Based on Rogowski Coil

Rogowski Coil 기반의 전류 센싱 회로를 적용한 SiC MOSFET 단락 보호 회로 설계

  • Lee, Ju-A (Dept. of Electrical & Computer Engineering, Sungkyunkwan University) ;
  • Byun, Jongeun (Automotive Research and Development Division, Hyundai Motor Group) ;
  • Ann, Sangjoon (Dept. of Electrical & Computer Engineering, Sungkyunkwan University) ;
  • Son, Won-Jin (Dept. of Electrical & Computer Engineering, Sungkyunkwan University) ;
  • Lee, Byoung-Kuk (Dept. of Electrical Engineering, Sungkyunkwan University)
  • Received : 2020.12.21
  • Accepted : 2021.02.26
  • Published : 2021.06.20
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Abstract

SiC MOSFETs require a faster and more reliable short-circuit protection circuit than conventional methods due to narrow short-circuit withstand times. Therefore, this research proposes a short-circuit protection circuit using a current-sensing circuit based on Rogowski coil. The method of designing the current-sensing circuit, which is a component of the proposed circuit, is presented first. The integrator and input/output filter that compose the current-sensing circuit are designed to have a wide bandwidth for accurately measuring short-circuit currents with high di/dt. The precision of the designed sensing circuit is verified on a double pulse test (DPT). In addition, the sensing accuracy according to the bandwidth of the filters and the number of turns of the Rogowski coil is analyzed. Next, the entire short-circuit protection circuit with the current-sensing circuit is designed in consideration of the fast short-circuit shutdown time. To verify the performance of this circuit, a short-circuit test is conducted for two cases of short-circuit conditions that can occur in the half-bridge structure. Finally, the short-circuit shutdown time is measured to confirm the suitability of the proposed protection circuit for the SiC MOSFET short-circuit protection.

Keywords

Acknowledgement

본 연구는 산업통상자원부(MOTIE)와 한국에너지기술평가원(KETEP)의 지원을 받아 수행한 연구 과제입니다. (No. 2018201010650A)

References

  1. A. Elasser and T. P. Chow, "Silicon carbide benefits and advantages for power electronics circuits and system," in Proceedings of the IEEE, Vol. 90, No. 6, pp. 969-986, Jun. 2002. https://doi.org/10.1109/JPROC.2002.1021562
  2. S. Mocevic, J. Wang, R. Burgos, D. Boroyevich, M. Jaksic, C. Stancu, and B. Peaslee, "Comparison and discussion on shortcircuit protections for silicon-carbide MOSFET modules: Desaturation versus rogowski switch-current sensor," IEEE Transactions on Industry Applications, Vol. 56, No. 3, pp. 2880-2893, Feb. 2020. https://doi.org/10.1109/tia.2020.2972816
  3. Texas Instruments, "Understanding the short circuit protection for silicon carbide MOSFETs," Jan. 2018. [Revised May 2020].
  4. TOSHIBA, "Smart gate driver coupler TLP5214A /TLP5214," Mar. 2018.
  5. CREE, "Cree CMF201202D SiC MOSFET", C2M0080120D datasheet, Oct. 2015.
  6. C. Ionita, M. Nawaz, K. Ilves, and F. Iannuzzo, "Comparative assessment of 3.3 kV/400 A SiC MOSFET and Si IGBT power modules," in IEEE Energy Conversion Congress and Exposition (ECCE), pp. 1343-1349, Oct. 2017.
  7. G. Wang, F. Wang, G. Magai, Y. Lei, A. Huang, and M. Das, "Performance comparison of 1200 V 100 A SiC MOSFET and 1200 V 100 A silicon IGBT," in IEEE Energy Conversion Congress and Exposition (ECCE), pp. 3230-3234, Sep. 2013.
  8. C. Xiao, L. Zhao, T. Asada, W. G. Odendaal, and J. D. van Wyk, "An overview of integratable curretn sensor technologies," in 38th IAS Annual Meeting on Conference Record of the Industry Applications Conference, Vol. 2, pp. 1251-1258, Oct. 2003.
  9. Y. Shi, Z. Xin, P. C. Loh, and F. Blaabjerg, "A review of traditional helical to recent miniaturized printed circuit board rogowski coils for power-electronic applications," IEEE Transactions on Power Electronics, Vol. 35, No. 11, pp. 12207-12222, Nov. 2020. https://doi.org/10.1109/tpel.2020.2984055
  10. J. D. Ramboz, D. E. Destefan, and R. S. Stant, "The verification of Rogowski coil linearity from 200 A to greater than 100 kA using ratio mathods," in Proceedings of 19th IEEE International Instrumentation & Measurement Technology Conference, Vol. 1, pp. 687-692, Aug. 2002.
  11. H. Li, Z. Xin, J. Chen, P. C. Loh, and F. Blaabjerg, "Extended wide-bandwidth Rogowski current sensor with PCB coil and electronic characteristic shaper," IEEE Trans. Power Electron., Vol. 36, No. 1, pp. 29-33, Jan. 2021. https://doi.org/10.1109/tpel.2020.3001058
  12. J. A. J. Pettinga and J. Siersema, "A polyphase 500 kA current measuring system with Rogowski coils," in IEE Proceedings of B - Electric Power Applications, Vol. 130, No. 5, pp. 360-363, Sep. 1983. https://doi.org/10.1049/ip-b.1983.0054
  13. Texas Instruments, "Integrator circuit," Feb. 2018. [Revised Jan. 2019].
  14. Teledyne LeCroy, "Current Probes," CP500 datasheet. [Online]. Available at: https://teledynelecroy.com/probes/current-probes/cp500.
  15. R. S. Chokhawala, J. Catt, and L. Kiraly, "A discussion on IGBT short-circuit behavior and fault protection schemes," IEEE Transactions on Industry Applications, Vol. 31, No. 2, pp. 256-263, Mar.\Apr. 1995. https://doi.org/10.1109/28.370271