Short-circuit Protection Circuit Design for SiC MOSFET Using Current Sensing Circuit Based on Rogowski Coil |
Lee, Ju-A
(Dept. of Electrical & Computer Engineering, Sungkyunkwan University)
Byun, Jongeun (Automotive Research and Development Division, Hyundai Motor Group) Ann, Sangjoon (Dept. of Electrical & Computer Engineering, Sungkyunkwan University) Son, Won-Jin (Dept. of Electrical & Computer Engineering, Sungkyunkwan University) Lee, Byoung-Kuk (Dept. of Electrical Engineering, Sungkyunkwan University) |
1 | C. Xiao, L. Zhao, T. Asada, W. G. Odendaal, and J. D. van Wyk, "An overview of integratable curretn sensor technologies," in 38th IAS Annual Meeting on Conference Record of the Industry Applications Conference, Vol. 2, pp. 1251-1258, Oct. 2003. |
2 | A. Elasser and T. P. Chow, "Silicon carbide benefits and advantages for power electronics circuits and system," in Proceedings of the IEEE, Vol. 90, No. 6, pp. 969-986, Jun. 2002. DOI |
3 | S. Mocevic, J. Wang, R. Burgos, D. Boroyevich, M. Jaksic, C. Stancu, and B. Peaslee, "Comparison and discussion on shortcircuit protections for silicon-carbide MOSFET modules: Desaturation versus rogowski switch-current sensor," IEEE Transactions on Industry Applications, Vol. 56, No. 3, pp. 2880-2893, Feb. 2020. DOI |
4 | Texas Instruments, "Understanding the short circuit protection for silicon carbide MOSFETs," Jan. 2018. [Revised May 2020]. |
5 | TOSHIBA, "Smart gate driver coupler TLP5214A /TLP5214," Mar. 2018. |
6 | CREE, "Cree CMF201202D SiC MOSFET", C2M0080120D datasheet, Oct. 2015. |
7 | C. Ionita, M. Nawaz, K. Ilves, and F. Iannuzzo, "Comparative assessment of 3.3 kV/400 A SiC MOSFET and Si IGBT power modules," in IEEE Energy Conversion Congress and Exposition (ECCE), pp. 1343-1349, Oct. 2017. |
8 | J. D. Ramboz, D. E. Destefan, and R. S. Stant, "The verification of Rogowski coil linearity from 200 A to greater than 100 kA using ratio mathods," in Proceedings of 19th IEEE International Instrumentation & Measurement Technology Conference, Vol. 1, pp. 687-692, Aug. 2002. |
9 | G. Wang, F. Wang, G. Magai, Y. Lei, A. Huang, and M. Das, "Performance comparison of 1200 V 100 A SiC MOSFET and 1200 V 100 A silicon IGBT," in IEEE Energy Conversion Congress and Exposition (ECCE), pp. 3230-3234, Sep. 2013. |
10 | Y. Shi, Z. Xin, P. C. Loh, and F. Blaabjerg, "A review of traditional helical to recent miniaturized printed circuit board rogowski coils for power-electronic applications," IEEE Transactions on Power Electronics, Vol. 35, No. 11, pp. 12207-12222, Nov. 2020. DOI |
11 | H. Li, Z. Xin, J. Chen, P. C. Loh, and F. Blaabjerg, "Extended wide-bandwidth Rogowski current sensor with PCB coil and electronic characteristic shaper," IEEE Trans. Power Electron., Vol. 36, No. 1, pp. 29-33, Jan. 2021. DOI |
12 | J. A. J. Pettinga and J. Siersema, "A polyphase 500 kA current measuring system with Rogowski coils," in IEE Proceedings of B - Electric Power Applications, Vol. 130, No. 5, pp. 360-363, Sep. 1983. DOI |
13 | Texas Instruments, "Integrator circuit," Feb. 2018. [Revised Jan. 2019]. |
14 | Teledyne LeCroy, "Current Probes," CP500 datasheet. [Online]. Available at: https://teledynelecroy.com/probes/current-probes/cp500. |
15 | R. S. Chokhawala, J. Catt, and L. Kiraly, "A discussion on IGBT short-circuit behavior and fault protection schemes," IEEE Transactions on Industry Applications, Vol. 31, No. 2, pp. 256-263, Mar.\Apr. 1995. DOI |